Tokyo Electron Limited

Takeshi Shimoaoki

Yusaku Hashimoto

Masahiro Fukuda

Kouichirou Tanaka

Kousuke Yoshihara

Junichi Kitano

Hirofumi Takeguchi

Tomohiro Iseki

Yuichi Terashita

Ryouichirou Naitou

Shogo Inaba

A method includes forming a liquid puddle of a mixed solution of the diluting liquid and the processing liquid; rotating the substrate at a first rotation speed which allows the mixed solution located at a region facing an inner side than an edge of the liquid contact surface to stay between the liquid contact surface and the surface of the substrate and allows the mixed solution located at a region facing an outer side than the edge of the liquid contact surface to be diffused toward an edge of the substrate; rotating the substrate at a second rotation speed smaller than the first rotation speed after the substrate is rotated at the first rotation speed; and moving the nozzle toward the edge of the substrate while discharging the processing liquid from the discharge hole in a state that the substrate is rotated at the second rotation speed.

Substrate processing method and recording medium capable of suppressing non-uniformity in degree of progression of processing depending on position on substrate

Provided is a development processing apparatus including a rotary holding unit configured to hold and rotate a wafer, a developer supply unit including a nozzle having a liquid contact surface facing a surface of the wafer and an ejection port opening to the liquid contact surface, and a controller. The controller is configured to: while the wafer rotates, execute a control of causing a developer to be ejected from the ejection port and moving the nozzle from an circumference side to a rotation center side of the wafer; after execution of the control, execute a control of moving the nozzle from the rotation center side to the outer circumference side of the wafer; and during execution of the control, execute a control of gradually reducing the rotation speed of the wafer as the center of the liquid contact surface approaches the outer circumference.

Development processing apparatus, development processing method, and storage medium

A development method includes: a development step of supplying a developing solution to a surface of a substrate for manufacturing a semiconductor device after undergoing formation of a resist film and exposure, to perform development; a first rotation step of, after the development step, increasing revolution speed of the substrate to rotate the substrate in a first rotational direction around a central axis so as to spin off and remove part of the developing solution from the substrate; and a second rotation step of, after the first rotation step, rotating the substrate in a second rotational direction reverse to the first rotational direction so as to spin off and remove the developing solution remaining on the substrate from the substrate.

Development method, development device, and non-transitory computer-readable storage medium

A substrate processing method includes steps of: supplying a developer onto a substrate surface from a discharge port while the substrate is rotated at a first rotation speed and a liquid contact surface faces the surface, and moving the nozzle while the liquid contact surface contacts with the developer so that a liquid film of the developer is formed on the surface; rotating the substrate at a second rotation speed slower than the first rotation speed, after the liquid film is formed, in a state where supply of the developer is stopped; rotating the substrate at a third rotation speed faster than the first rotation speed, after the substrate is rotated at the second rotation speed; and reducing rotation speed of the substrate to the second rotation speed or less, after the substrate is rotated at the third rotation speed, so that the liquid film is held on the surface.

Substrate processing method, substrate processing apparatus, and non-transitory computer-readable medium

A developing method includes: horizontally holding a substrate; disposing an opposing surface of a developer nozzle that faces a portion of a surface of the substrate, above one of central and peripheral portions of the surface; discharging a developer to form a liquid collection portion of the developer; spreading the liquid collection portion by moving the developer nozzle toward the other of the central and peripheral portions with the opposing surface brought into contact with the liquid collection portion; lifting the developer nozzle relative to the surface while stopping the discharge of the developer, and pulling up a portion of the liquid collection portion; stopping the lifting, and forming a pillar of the developer having a tapered upper end which is brought into contact with the opposing surface; and applying a shearing force to the pillar to shear the tapered upper end and separating the pillar from the opposing surface.

Developing method, developing apparatus, and storage medium

A developing method includes: forming a puddle of a developer on a surface of the substrate held by the substrate holding unit by a first developer nozzle; subsequently spreading the puddle of the developer over the whole substrate surface, by moving the first developer nozzle discharging the developer from a central or peripheral part to the peripheral or central part of the rotating substrate, with a contacting part of the first developer nozzle contacting with the puddle; supplying the developer from a second developer nozzle onto the rotating substrate, thereby to uniformize, in the substrate plane, distribution of a degree of progress of development by the developer spreading step; and removing the developer between the developer spreading step and the developer supplying step to remove the developer on the substrate.

Developing method, developing apparatus and storage medium

In the present invention, in a rinse treatment method of cleaning a substrate after an exposed pattern thereon has been subjected to developing treatment, the following steps are performed such as supplying pure water onto the substrate to clean the substrate with the pure water; supplying a first rinse solution composed of a surfactant with a predetermined concentration onto the substrate to clean the substrate with the first rinse solution; and supplying a second rinse solution composed of a surfactant with a concentration lower than that of the first rinse solution onto the substrate to clean the substrate with the second rinse solution. According to the present invention, in the rinse treatment of the substrate after developing treatment, it is possible to dry the substrate without causing pattern collapse to restrain variation in pattern line width, and to reduce the remaining precipitation-based defects to increase the productivity.

Rinse treatment method, developing treatment method and developing apparatus

A rinsing process is performed by supplying a rinsing liquid onto a substrate with a light-exposed pattern formed thereon and treated by a developing process. The rinsing liquid contains a polyethylene glycol family surfactant or an acetylene glycol family surfactant in a critical micelle concentration or less. Preferably, the surfactant includes a hydrophobic group having a carbon number of larger than 11 and having no double bond or triple bond therein.

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Koshi, Japan

Takeshi Shimoaoki