Hitachi Metals, Ltd.

Hitachi-high-technologies Corporation

Nintendo Co., Ltd.

Sumitomo Special Metals Co., Ltd.

Proterial, Ltd.

Stanley Electric Co., Ltd

Hitachi High-tech Corporation

Hitatchi Metals, Ltd.

Takeshi Shimada

Kazuya Toji

Kazuhiro Nishikawa

Koichi Terao

Takahiro Abe

Kenichi Kuwabara

Kentaro Yamada

Shoji Ikuhara

Takao Arase

Tsuyoshi Matsumoto

Kotaro Fujimoto

Kenji Yamamoto

Makoto Suyama

Michiko Matsuda

Masato Ishimaru

Kiyoshi Mizuki

Jun Hayakawa

Takeshi Shima

Daisuke Fujita

Tsutomu Tetsuka

Saburou Kanai

Tadamitsu Kanekiyo

Tomoyuki Tada

Makoto Satake

Naohiro Yamamoto

Yutaka Takehisa

Akinori Nishide

Yasuhiro Nishimori

Tadayoshi Kawaguchi

Yusuke Beppu

Tsutomu Kaneshige

Hayato Watanabe

Naoto Fukatani

Eiji Ikegami

Kentaro Ino

Atsushi Yoshida

Kazuhiro Kura

Yusuke Shibata

Kei Matsumoto

Nan Wang

Masamichi Sakaino

Toshiki Kida

Takeshi Oono

Yoshitaka Kai

Kuniharu Fujikawa

Takeo Uchino

Takashi Nogawa

Keisuke Kageyama

Chiemi Kubota

Tomotake Tohei

Yusuke Yasuda

Hideki Yamaura

Takao Ohara

Yoshihiro Kamitani

Itaru Ueda

Tsutomo Kaneshige

Yusuke Nagamitsu

Hideo Hatayama

Hisashi Koyama

Masaru Nishita

Akihiko Mitsuda

Shugo Ohtsuki

Soyoko Ando

Akihiro Miyauchi

Shinichi Fujiwara

When a size is increased for mass production, an area of a pressurized surface is increased. This raised a problem in that insufficient load or the like causes a pressure during pressure sintering and a relative density of a thermoelectric conversion element to be likely to become insufficient. As a solution, there is provided a method for producing a thermoelectric conversion element, including: a step of mixing a skutterudite-type thermoelectric conversion material powder containing Sb and a sintering agent containing a compound including Mn and Sb, to obtain a mixture; and a step of sintering the mixture.

Method for producing thermoelectric conversion element

This method is for manufacturing a thermoelectric conversion module in which a first conductive member, a thermoelectric conversion element, a second conductive member are joined by joining members, the method comprising: a step for, after applying on the first conductive member a first paste including metal particles, disposing the thermoelectric conversion element on the first paste, and compressing and spreading the first paste; a step for disposing the second conductive member, after applying a second paste including metal particles in a controlled amount, on the thermoelectric conversion element, and compressing and spreading the second paste; and a step for sintering the first and the second pastes to obtain joining members.

Method for manufacturing thermoelectric conversion module

A thermoelectric conversion material includes a sintered body including a main phase including a plurality of crystal grains including Ce, Mn, Fe, and Sb and forming a skutterudite structure, and a grain boundary between crystal grains adjacent to each other. The grain boundary includes a sintering aid phase including at least Mn, Sb, and O. Thus, with respect to a skutterudite-type thermoelectric conversion material including Sb, which is a sintering-resistant material, it is possible to improve sinterability while maintaining a practical dimensionless figure-of-merit ZT, and to reduce processing cost.

Thermoelectric conversion material, thermoelectric conversion module using same, and method of manufacturing thermoelectric conversion material

There is provided a plasma processing method for forming shallow trench isolation (STI) on a silicon substrate, the plasma processing method including: a trench forming step of forming a trench in the silicon substrate by using plasma generated by pulse-modulated radio frequency power; and an oxidation step of oxidizing the silicon substrate by using only oxygen gas which is performed after the trench forming step, in which the trench forming step and the oxidizing step are repeated a plurality of times.

Plasma processing method

A thermoelectric conversion material having a high dimensionless figure of merit ZT includes: a large number of polycrystalline grains which include a skutterudite-type crystal structure containing Yb, Co, and Sb; and an intergranular layer which is between the neighboring polycrystalline grains and includes crystals in which an atomic ratio of O to Yb is more than 0.4 and less than 1.5. A method for manufacturing a thermoelectric conversion material includes: a weighing step; a mixing step; a ribbon preparation step by rapidly cooling and solidifying a melt of the raw materials by using a rapid liquid cooling solidifying method; a first heat treatment step including heat treating in an inert atmosphere with an adjusted oxygen concentration; a second heat treatment step including heat treating in a reducing atmosphere; and manufacturing the thermoelectric conversion material by a pressure sintering step in an inert atmosphere.

Thermoelectric conversion material, thermoelectric conversion module, and method for manufacturing thermoelectric conversion material

In an example information processing system including a server and at least one apparatus capable of communicating with the server, the apparatus includes at least an application execution unit. The application execution unit executes a predetermined application. The system includes, by either one of the apparatus and the server or by a cooperation of the apparatus and the server, an execution state determination unit and a writing management unit. The execution state determination unit determines whether or not a state of the execution performed by the application execution unit has satisfied a predetermined condition. The writing management unit, when the state has satisfied the predetermined condition, permits a user of the apparatus to write in information managed by the server.

Information processing system, storage medium having stored therein information processing program, information processing apparatus, and information processing method

A plasma processing method is provided for reducing dimensions of a film to be etched from patterned dimensions, and is capable of reducing dimensions without causing deformation or collapse of the film to be etched. A plasma processing method for trimming a tantalum film by plasma etching using a resist, an antireflective film disposed under the resist, and a mask film disposed under the antireflective film, includes the steps of trimming the antireflective film and the mask film by plasma etching with the resist as a mask; removing the resist and the antireflective film subjected to the trimming, by plasma; and trimming the tantalum film by plasma etching with a mask film obtained after the resist and the antireflective film subjected to the trimming are removed by plasma, as a mask.

A plasma etching method for plasma etching a film to be etched to a size smaller than a prescribed size using a mask patterned to the prescribed size performs etching on the film to be etched to the size smaller than the prescribed size while forming a protection film on side walls of the film to be etched.

Plasma etching method

Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.

Plasma processing method and apparatus

Provided is a semiconductor ceramic composition that is a lead-free semiconductor ceramic composition in which a portion of Ba in a BaTiO-based oxide is substituted by Bi and A (in which A is at least one kind of Na, Li and K), the semiconductor ceramic composition having a region between a center portion and an outer shell portion within a crystal grain, in which when Bi concentration is measured in a radial direction within the crystal grain, the Bi concentration in the region is higher than both Bi concentration in the center portion and Bi concentration in the outer shell portion.

Semiconductor ceramic composition, method for producing the same, and PTC element

An example computer apparatus includes a processor coupled to a memory storing a program. The processor executes the program to perform operations including displaying an application menu screen displaying at least a selectable first menu item for an uninstalled first application and a selectable second menu item for an installed second application; periodically determining availability/unavailability of the first application for download from another computer apparatus; in response to selection of the first menu item if the most recent periodic determining has determined that the first application is unavailable for download from the server, providing announcement information about the first application; and in response to selection of the first menu item if the most recent periodic determining has determined that the first application is available for download from the server, initiating a process for downloading and installing the first application.

System and method for installing software applications

The present invention provides a method for manufacturing a magnetoresistive element having a high selection ratio of an insulating layer to a free layer. The method for manufacturing a magnetoresistive element includes the steps of preparing (left drawing, middle drawing) a substrate on which a free layer, a fixed layer disposed under a first magnetic layer, and a barrier layer that is an insulating layer disposed between the free layer and the fixed layer are formed and processing (right drawing) the free layer by plasma etching, in which an insulating layer configuring the barrier layer contains a Ta element or a Ti element.

Method of manufacturing magnetoresistive element

In a plasma processing method of dry-etching of a magnetic film having a thickness of 200 nm to 500 nm, a plasma processing method of dry-etching of a sample having the magnetic film on which a multilayered film including a resist film, an non-organic film underlying the resist film, a Cr film underlying the non-organic film, and an AlOfilm underlying the Cr film.

To improve jump characteristic of BaTiO&#x2014;(BiNa)TiOmaterial. There is provided a process for producing a semiconductive porcelain composition in which a part of Ba is substituted with Bi&#x2014;Na, the process including a step of preparing a (BaQ)TiOcalcined powder (in which Q is a semiconductor dopant), a step of preparing a (BiNa)TiOcalcined powder, a step of mixing the (BaQ)TiOcalcined powder and the (BiNa)TiOcalcined powder, a step of molding and sintering the mixed calcined powder, and a step of heat-treating the obtained sintered body at 600&#xb0; C. or lower; and a PCT heater employing the element prepared by the above steps.

Process for producing semiconductive porcelain composition and heater employing semiconductive porcelain composition

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Osaka, Japan

Takeshi Shimada