Ebara Corporation

International Superconductivity Technology Center

Hitachi, Ltd.

Kyocera Corporation

Mitsubishi Materials Corporation

The Tokyo Electric Power Company, Incorporated

Mitsubishi Metal Corporation

Other

Matsushita Electric Industrial Co., Ltd.

Mitsubishi Denki Kabushiki Kaisha

Kabushiki Kaisha Kobe Seiko Sho

Central Research Institute of Electric Power Industry

Tohoku Electric Power Company, Inc.

Shincron Co., Ltd.

Mitsubushi Metal Corporation

Takeshi Sakurai

Shoji Tanaka

Hisao Yamauchi

Kaoru Hamaura

Tetsuji Togawa

Norio Kimura

Mitsuru Miyazaki

Nobuo Suzuki

Koji Maruyama

Takahiro Wada

Nobuyuki Takada

Toru Yamashita

Toyomi Nishi

You Ishii

Naoki Koshizuka

Eiji Hirai

Takayuki Miyatake

Nobuyuki Sugii

Takuo Takeshita

Hiromi Yajima

Hiroshi Tamagaki

Takayoshi Kawamoto

Shinichi Koriyama

Shoichi Kodama

Seiji Adachi

Tadashi Sugihara

Shigeharu Matsumoto

Michiharu Ichikawa

Kazuo Kikuchi

Yoshimitsu Ikari

Shin-ichi Koriyama

Matsuhiko Ishida

Suguru Ogura

Shinichiro Saisho

Masaru Asano

Shigeru Goto

Hirotsugu Takizawa

Yuji Yaegashi

Takanori Murata

Yukihiro Ouchi

Masahiko Shimada

Yizhou Song

Naoki Ohba

A substrate cleaning deviceincludes a substrate holding unitconfigured to hold a substrate W, a first cleaning unithaving a first cleaning membercaused to come into contact with a first surface WA of the substrate W held by the substrate holding unitto clean the first surface WA, a second cleaning unithaving a second cleaning membercaused to come into contact with the first surface WA of the substrate W held by the substrate holding unitto clean the first surface WA, and a controllerconfigured to control the first and second cleaning unitsso that, when any one of the first cleaning memberand the second cleaning membercleans the first surface WA of the substrate W held by the substrate holding unit, the other cleaning member is at a position apart from the substrate W held by the substrate holding unit

Substrate cleaning device, substrate cleaning apparatus, method for manufacturing cleaned substrate and substrate processing apparatus

When a polishing pad is attached to a polishing table, the polishing pad can be easily positioned on and attached to the polishing table and air pockets are prevented from forming. As a position guide memberis inserted into a guide holewith an attachment surface of a polishing paddownward, the polishing padis positioned on and attached to a polishing table. At this time, the guide holeof the polishing padis guided by the position guide memberand the polishing padis easily positioned so as to match the upper surface of the polishing tablewith the outer periphery thereof. Then, as release paper is gradually peeled off from a rear surface of the polishing pad, the portion where the release paper is peeled off is attached to the polishing table

Polishing apparatus, polishing pad positioning method, and polishing pad

A polishing cloth mounted on a turntable is dressed by bringing a dresser in contact with the polishing cloth for restoring the polishing capability of the polishing cloth. The dressing is performed by measuring heights of a surface of the polishing cloth at radial positions of the polishing cloth in a radial direction thereof determining a rotational speed of the dresser with respect to a rotational speed of the turntable on the basis of the measured heights, and dressing the polishing cloth by pressing the dresser are rotating. The dresser has an annular diamond grain layer or an annular SiC layer.

Method and apparatus for dressing polishing cloth

A polishing apparatus can produce a uniform quality of polished products by supplying a polishing solution consistently without being affected by any disturbances in the solution supply source. The polishing apparatus comprises: a polishing section for polishing a workpiece by pressing the same against a polishing tool; a solution piping assembly to be connected to an external solution supply device for transferring a polishing solution therefrom to the polishing section; and a solution suction device provided in the solution piping assembly for introducing the polishing solution from the solution supply device to the polishing section at a desired flow rate.

Polishing apparatus

A polishing cloth mounted on a turntable is dressed by bringing a dresser in contact with the polishing cloth for restoring the polishing capability of the polishing cloth. The dressing is performed by measuring heights of a surface of the polishing cloth at radial positions of the polishing cloth in a radial direction thereof, determining a rotational speed of the dresser with respect to a rotational speed of the turntable on the basis of the measured heights, and dressing the polishing cloth by pressing the dresser against the polishing cloth while the turntable and the dresser are rotating. The dresser has an annular diamond grain layer or an annular SiC layer.

A polishing apparatus includes a cleaning device for critical cleaning of a top ring or a dressing tool to obtain high quality polishing by minimizing surface damage caused by contaminants originating from the top ring and/or dressing tool. The polishing apparatus includes a polishing table; a workpiece holding member for pressing a workpiece onto the polishing table; a dressing tool for conditioning a work surface provided on the polishing table. A cleaning device is provided for cleaning the dressing tool and/or the workpiece holding member. The cleaning device is provided with a spray nozzle for directing a cleaning solution toward at least an upper surface of the workpiece holding member or the dressing tool.

The present invention is drawn to an apparatus for forming a thin film. The apparatus includes a vacuum chamber; a vacuum apparatus connected to the vacuum chamber; a holder placed in the vacuum chamber, which holder holds a substrate and is rotated by means of a rotating mechanism; a plasma CVD apparatus; and a sputtering apparatus, wherein the plasma CVD apparatus and the sputtering apparatus are placed in a single vacuum chamber and a thin film having an medium refractive index is formed on the substrate held by the holder, by means of the plasma CVD apparatus and the sputtering apparatus. The method making use of such an apparatus is also disclosed.

Apparatus and method forming thin film

Disclosed herein are high-temperature oxide superconductors of RBa.sub.2 Cu.sub.4 O.sub.8 type, with Ba partly replaced by Sr or Ca, or with R and Ba partly replaced by Ca and Sr, respectively, as represented by the chemical composition formula of R(Ba.sub.1-y Sr.sub.y).sub.2 Cu.sub.4 O.sub.8 or R(Ba.sub.1-z Ca.sub.z).sub.2 Cu.sub.4 O.sub.8 or (R.sub.1-x Ca.sub.x) (Ba.sub.1-y Sr.sub.y).sub.2 Cu.sub.4 O.sub.8. They exhibit superconductivity at high temperatures. Especially, the last one exhibits superconductivity at a higher temperature than the former two. All of them can be made with a less amount of Ba as a deleterious substance, and the first two have improved sinterability. The best results are obtained when they are produced by the process involving the hot hydrostatic pressure treatment of the mixture of raw materials at 850.degree.-1100.degree. C. in an atmosphere composed of an inert gas and oxygen. The process permits a wider selection of Ba raw materials.

High temperature oxide superconductor

A superconductive oxide material having an infinite layer structure and having the following formula:

Superconductive copper-containing oxide materials of the formula A.sub.p

Oxide superconductor and manufacturing method thereof via HIP and

An oxide superconductor comprises a composition represented by the composition formula: (Nd.sub.x --Ce.sub.y --L.sub.z).sub.2 CuO.sub.4-d (wherein L is an element selected from Ca and Mg, and x+y+z=1). The compositions of Nd, Ce and L of the oxide superconductor corresponds to a point falling inside an area of Nd--Ce--L ternary diagram surrounded by straight lines (A-B), (B-C), (C-D) and (D-A) connecting point (A) with point (B), point (B) with point (C), point (C) with point (D) and point (D) with point (A), respectively, the points (A), (B), (C) and (D) being points (x=1, y=0, z=0), (x=0.4, y=0.6, z=0), (x=0.4, y=0.3, z=0.3) and (x=0.1, y=0, z=0.9), respectively, in the Nd--Ce--L ternary diagram. Above-described Nd--Ce--L--Cu--O oxides can exhibit superconductivity within a wide range of composition when heat-treated in an atmosphere of nitrogen.

N-type oxide superconductor represented by the formula (Nd.sub.x

Process for producing Bi-Ca-Sr-Cu-O, TL-Ca-Sr-Cu-O and Tl-Ba-Ca-Cu-O

A superconductive material is disclosed which has the following composition:

Superconducting material

A moving staircase is disclosed wherein along the circulating path of a number of conventional tread boards thereof which are articulated together in an endless fashion at least one pair of specifically constituted tread boards are disposed between any two conventional tread boards so as to be articulated thereto. The specifically constituted tread boards each have substantially the same configuration as that of the conventional tread board and are articulated one behind the other in the circulating direction of the conventional tread boards. The rear one is provided with a movable footboard so as to be moved up and down relative thereto, the movable footboard being adapted to be normally locked to the rear one of the specifically constituted tread boards by a lock means provided therein. When required, the movable footboard is made free to move by the release of the lock means and is supported by the front one of the specifically constituted tread boards through forks or bars which are provided in the front one so as not to normally interfere with the movement of the rear one. When the lock means of the rear one is released, the forks or bars are simultaneously protruded toward the rear one to support its footboard, and the footboard is moved together with the front one of the specifically constituted tread boards with their upper surfaces being flush with each other.

Moving staircase

Growing community of inventors

Tokyo, Japan

Takeshi Sakurai