Yamatake Corporation

Yamatake-honeywell Co., Ltd.

Takeshi Fukiura

Shigeo Kimura

Yoshiyuki Ishikura

Masayuki Yoneda

Ikuo Nishimoto

Yasuhiro Goshoo

Nobuaki Honda

Shoji Nagasaki

Hirofumi Toujou

A semiconductor pressure sensor is presented. The pressure sensor includes a silicon substrate with a diaphragm that produces a distortion depending on the pressure. Strain gauges are provided on the main surface side of the silicon substrate with the diaphragm and are formed by conductive diffusion resistors different from the substrate. A getter is provided on the main surface side of the silicon substrate including the periphery of the strain gauges adjacent to the strain gauges. The getter includes the PN-junction area to which reverse bias is impressed so that the metal impurities of at least an Fe atom that are contained in the silicon substrate may be captured.

Semiconductor pressure sensor with strain gauges formed on a silicon diaphragm

That portion of an n-type single-crystal Si layer which corresponds to a pressure-sensitive region is etched to an SiO layer by using the SiO layer as an etching stopper layer. The SiO layer exposed by this etching is removed. The pressure-sensitive region of the n-type single-crystal Si layer is etched by a predetermined amount to form a diaphragm . Thus, the SiO layer is removed from the diaphragm and a diaphragm edge portion

Semiconductor pressure sensor and its manufacturing method

In a capacitive pressure sensor and a method of manufacturing the same, first and second grooves are formed in one and the other surfaces of a substrate, respectively. A first sacrificial layer is embedded in the first groove. First insulating films are formed on the substrate in which the first sacrificial layer is formed. The first insulating films have a first film electrode stacked therebetween. A second sacrificial layer having a predetermined shape is stacked on the first insulating film. Second insulating films are formed on the first insulating film on which the second sacrificial layer is formed. The second insulating films have a second film electrode stacked therebetween. A pressure introducing hole is formed in the second groove formed in the other surface of the substrate to reach the first sacrificial layer. First and second hollow portions are formed by removing the first and second sacrificial layers.

Capacitive pressure sensor and method of manufacturing the same

According to a capacitive pressure sensor and a method of manufacturing the same, first and second grooves are formed in one and the other surfaces of a substrate, respectively. A sacrificial layer is embedded in the first groove. Insulating films are formed on the substrate, on which the sacrificial layer is formed, to sandwich an electrode. Etching is performed to form a pressure introducing hole through the substrate to reach the sacrificial layer. A hollow portion is formed by removing the sacrificial layer through the pressure introducing hole.

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Kanagawa, Japan

Takeshi Fukiura