Tokyo Electron Limited

Takeshi Ando

Hiroyuki Matsuura

Takeshi Kobayashi

Kohei Fukushima

Yutaka Motoyama

Kazumasa Igarashi

Koichi Shimada

Kiwamu Ito

Yuki Tanaka

A plasma processing apparatus includes a cylindrical processing chamber with a sidewall having an opening, to accommodate substrates on respective stages. The plasma processing apparatus includes a plasma compartment wall with an outer surface, the plasma compartment wall being hermetically provided at the sidewall of the processing chamber to close the opening of the sidewall of the processing chamber, and the plasma compartment wall defining a plasma formation space. The plasma processing apparatus includes a first plasma electrode pair consisting of first electrodes, the first electrodes being arranged opposite each other, on opposite sides of the outer surface of the plasma compartment wall. The plasma processing apparatus includes a second plasma electrode pair consisting of second electrodes, the second electrodes being arranged opposite each other, on the opposite sides of the outer surface of the plasma compartment wall.

Plasma processing apparatus and plasma processing method

A plasma generating apparatus includes: an electrode pair including a first plasma electrode and a second plasma electrode that are arranged to face each other; an RF power supply that supplies an RF power to the electrode pair; and a matching unit provided between the RF power supply and the electrode pair. The matching unit includes: a first variable capacitor and a second variable capacitor that are connected in parallel with respect to a load between the electrode pair; a coil connected in series with the first plasma electrode; and a capacitor connected in series with the second plasma electrode.

Plasma generating apparatus, plasma processing apparatus, and plasma processing method

An ignition method in a plasma processing apparatus includes: applying a first radio frequency from a radio-frequency power supply to an electrode of a plasma generator, thereby igniting plasma from a gas, the radio-frequency power supply being capable of applying a radio frequency of a variably controlled frequency to the electrode of the plasma generator; and applying a second radio frequency different from the first radio frequency to the electrode of the plasma generator after a predetermined time is elapsed after applying the first radio frequency to the electrode of the plasma generator.

Ignition method and plasma processing apparatus

A substrate processing apparatus includes: a processing vessel configured to be vacuumed; a holding unit configured to hold a plurality of substrates and to be inserted into or separated from the processing vessel; a gas supply unit configured to supply gas into the processing vessel; a plasma generation box partitioned and formed by a plasma partition wall; an inductively coupled electrode located at an outer sidewall of the plasma generation box along its length direction; a high frequency power supply connected to the inductively coupled electrode through a feed line; and a ground electrode located outside the plasma generation box and between the processing vessel and the inductively coupled electrode and arranged in the vicinity of the outer sidewall of the plasma generation box or at least partially in contact with the outer sidewall.

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Oshu, Japan

Takeshi Ando