Jsr Corporation

Takeo Shioya

Yukio Nishimura

Hiromitsu Nakashima

Hiroki Nakagawa

Gouji Wakamatsu

Kentarou Gotou

Eiichi Kobayashi

Tsuyoshi Furukawa

Toshiyuki Kai

Motoyuki Shima

Kanako Meya

Kentarou Harada

Yuuko Kiridoshi

Hiroyuki Nii

An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).

Fluorine-containing polymer, purification method, and radiation-sensitive resin composition

A composition for resist pattern-refinement includes an ion represented by formula (1-1), an ion represented by formula (1-2), an ion represented by formula (2-1), an ion represented by formula (2-2) and a solvent. A total amount of the ions blended is no less than 50% by mass with respect to a sum of components other than the solvent. Rrepresents a monovalent organic group having 1 to 30 carbon atoms or a fluorine atom; Z represents a single bond or a divalent linking group; Rrepresents a single bond, a divalent hydrocarbon group having 1 to 10 carbon atoms or a divalent fluorinated hydrocarbon group having 1 to 10 carbon atoms; Mrepresents a monovalent cation; and Rrepresents a monovalent organic group having 1 to 30 carbon atoms.

Composition for resist pattern-refinement, and fine pattern-forming method

A fluorine-containing polymer for use in a radiation-sensitive resin composition is used for forming a photoresist film in a process of forming a resist pattern, including a liquid immersion lithographic process in which radiation is emitted through a liquid having a refractive index larger than the refractive index of air at a wavelength of 193 nm, and being present between a lens and the photoresist film. The fluorine-containing polymer has a weight average molecular weight determined by gel permeation chromatography in the range from 1,000 to 50,000 and a receding contact angle with water and the photoresist film formed therefrom is 70&#xb0; or more.

A double patterning method includes providing a first resist film on a substrate using a first photoresist composition. The first resist film is exposed. The exposed first resist film is developed using a first developer to form a first resist pattern. A second resist film is provided in at least space areas of the first resist pattern using a second photoresist composition. The second resist film is exposed. The exposed second resist film is developed using a second developer that includes an organic solvent to form a second resist pattern. The first resist pattern is insoluble or scarcely soluble in the second developer.

Double patterning method

Resist pattern formation method

A radiation-sensitive resin composition comprising (A) resin which comprises a recurring unit (1) shown by the following formula (1) and either or both of a recurring unit (2) shown by the following formula (2) and a recurring unit (3) shown by the following formula (3), and (B) a photoacid generator shown by the following formula (4).

Radiation-sensitive resin composition

Growing community of inventors

Tokyo, Japan

Takeo Shioya