Screen Holdings Co., Ltd.

Takemitsu Miura

Kenji Kobayashi

Akihisa Iwasaki

Kazuhide Saito

Kenji Izumoto

Ayumi Higuchi

Rei Takeaki

Yoshiyuki Fujitani

In a substrate processing apparatus, an outer edge portion of a substrate in a horizontal state is supported from below by an annular substrate supporting part, and a lower surface facing part having a facing surface facing a lower surface of the substrate is provided inside the substrate supporting part. A gas ejection nozzle for ejecting heated gas toward the lower surface is provided in the lower surface facing part, and the substrate is heated by the heated gas when an upper surface of the rotating substrate is processed with a processing liquid ejected from an upper nozzle. Further, a lower nozzle is provided in the lower surface facing part, to thereby perform a processing on the lower surface with a processing liquid. Since the gas ejection nozzle protrudes from the facing surface, a flow of the processing liquid into the gas ejection nozzle can be suppressed during the processing.

Substrate processing apparatus and substrate processing method

A substrate treatment method that includes circulating a treatment liquid from a treatment vessel through a circulation path extending through a filter and a temperature controller, spouting the treatment liquid toward a substrate accommodated in the treatment vessel to recover the treatment liquid in the treatment vessel, and controlling the liquid surface level of the treatment liquid retained in the treatment vessel below the substrate held at a substrate treatment position.

Substrate treatment method

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Kyoto, Japan

Takemitsu Miura