Murata Manufacturing Co., Ltd.

Takehisa Kajikawa

Koichi Sakamoto

Sadao Yamashita

Yohei Ishikawa

Kenichi Iio

Yasutaka Fujii

Kazumasa Haruta

Satoru Hachinohe

Kazuo Kasue

A method for fabricating a circuit module includes a step of filling the gap between a chip component and a substrate on which the chip component is mounted in a flip chip configuration with resin. The method uses simplified equipment and minimizes the undesired spread of resin. The resin is supplied between the sidewall of a dispenser needle and the sidewall of the chip component. Due to capillary action, a resin pool is formed and then the gap between the chip component and the substrate is spontaneously filled with the resin of the resin pool.

Method for fabricating circuit module

A high-frequency module includes a dielectric plate in which a resonator is formed and a cover for covering the dielectric plate. A hole is provided in the cover. A laser beam for laser trimming passes through the hole. The area of opening and the depth of the hole are defined so that electromagnetic waves in a usable frequency band are cut off in the hole. An electrical characteristic is measured in a state where all components including the cover are assembled, and laser trimming is performed through the hole so as to obtain a desired characteristic.

High-frequency module, transmitter-receiver, and method of adjusting characteristic of the high-frequency module

A drain electrode and a source electrode are provided for an intrinsic device section on a GaAs substrate with a gate electrode placed therebetween. Almost all or substantial parts of the GaAs substrate is covered by an extending source electrode extending from the source electrode. A belt-shaped extending drain electrode is provided on the extending source electrode with a dielectric layer placed therebetween, and thereby an output-side microstripline is formed. A belt-shaped extending gate electrode is also provided on the extending source electrode with a dielectric layer placed therebetween, and thereby an input-side microstripline is formed.

High-frequency semiconductor device having microwave transmission line being formed by a gate electrode source electrode and a dielectric layer in between

A dielectric resonator allowing size reduction and easy modulation of coupling between adjacent resonating sections and electrodes is provided. A configuration is such that electric conductors,and,having openings on two main faces of a dielectric substrate,are arranged so as to oppose each other. Electrodes,and,are respectively formed on one main face each of supporting members,and,, the supporting members,and,are arranged via spacers,so as to oppose each other and so as to be apart from each other with a predetermined spacing in the thickness direction of the dielectric substrate,for the dielectric substrate,, first and second conductor plates,and,are arranged apart with a predetermined spacing from the supporting members,and,, and the dielectric substrate positioning between the openings opposing each other is used as a resonating section.

Dielectric resonator, dielectric filter, dielectric duplexer, and oscillator

A planar dielectric integrated circuit is provided such that energy conversion loss between a planar dielectric line and electronic components is small and that impedance matching between them can be easily obtained. By providing slots which oppose both main surfaces of a circuit substrate, two planar dielectric lines are constructed. A slot line, and a first line-conversion conductor pattern which is connected to the electromagnetic field of the slot line and a first planar dielectric line in order to perform line conversion, are provided at the end portion of the first planar dielectric line, including a slot. A coplanar line and a second line-conversion conductor which is made to project in a direction at right angles to a second planar dielectric line is provided at the end portion of the second planar dielectric line, including a slot. A semiconductor device is placed in such a manner as to be extended over the coplanar line and the slot line.

Planar dielectric integrated circuit

An oscillator comprises a dielectric resonator, a circuit board, and an adjustment mechanism for adjusting the relative positional relationship between the dielectric resonator and the circuit board; the dielectric resonator having a dielectric substrate, electrodes provided on two opposite faces of the dielectric substrate, and electrode removal portions provided at predetermined positions on the electrodes; and the adjustment mechanism comprising screws and springs for moving the dielectric resonator.

Oscillator and communications device

An amplifying circuit is formed by a combination of a dielectric line waveguide and a semiconductor device. Two electrically conductive plates are provided substantially parallel to each other. Two dielectric strips are disposed between the two conductive plates, and a dielectric plate is further inserted between the dielectric strips. Ground conductors are formed on the dielectric plate. The ground conductors have an area which equals an amount required for blocking a RF signal propagating in the dielectric line waveguide. A slot line is formed between the ground conductors in a position intermediate opposed sides of the dielectric strips. Line-switching conductor patterns are provided at both sides of the ends of the slot line. A field-effect transistor is mounted on the slot line such that it bridges over the slot line. Accordingly, losses and distortion of an RF signal, which would occur in an input/output circuit, are suppressed, and the generation of parasitic coupling is eliminated. Further, the dielectric line waveguide is miniaturized free from an external circuit, and accordingly, the manufacturing cost is reduced as well.

Growing community of inventors

Osaka, Japan

Takehisa Kajikawa