Screen Holdings Co., Ltd.

Screen Semiconductor Solutions Co., Ltd.

Takehiro Wajiki

Tsuyoshi Mitsuhashi

Tadashi Miyagi

Masashi Kanaoka

Shinichi Takada

In a substrate processing apparatus, neutralization processing is performed on a substrate by a neutralization device provided in a thermal processing section. In the neutralization device, at least one of a holder that holds the substrate and an emitter that emits vacuum ultraviolet rays is moved relative to another one in one direction. At this time, one surface of the substrate is irradiated with the vacuum ultraviolet rays emitted by the emitter. When the entire one surface of the substrate is irradiated with the vacuum ultraviolet rays, the neutralization processing ends. Thereafter, the substrate on which the neutralization processing has been performed is transported to a coating processing unit in a coating processing section. In the coating processing unit, a film of a processing liquid is formed on the one surface of the substrate on which the neutralization processing has been performed.

Substrate processing apparatus and substrate processing method

A nozzle starts discharging a processing liquid while a spin chuck holds and rotates a substrate having a water-repellent film being formed on a surface thereof. The processing liquid is discharged to a position spaced away from the center of the substrate by a preset distance, and flows so as to converge into one stream on the substrate immediately after discharge of the processing liquid starts. This achieves suppression of the minute water droplets. Moreover, the nozzle is moved toward outside of the substrate while discharging the processing liquid successively. This allows entire flow of the processing liquid to move toward outside of the substrate while the processing liquid converging into one stream on the substrate is maintained. Here, inside the flow of the processing liquid is a dried region.

Substrate treating method

After a developing step, a substrate is spun at high speeds without supplying a cleaning liquid to a surface of the substrate. This causes a large centrifugal force to act on a developer on a resist film. Consequently, the developer can be removed rapidly from the surface of the substrate. As a result, development can be stopped at an expected timing. Moreover, a circuit pattern having an expected dimension can be obtained. At this time, a dissolved product is also removable with the developer from the substrate. This can avoid failure in development caused by the dissolved product. Consequently, suitably maintained quality of negative development can be achieved with a reduced usage amount of the cleaning liquid.

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Kyoto, Japan

Takehiro Wajiki