Sumco Corporation

Takehiro Tsunemori

Shinya Fukushima

Kenji Aoki

Kazuhiro Yamamoto

Eiji Kamiyama

A method of measuring the concentration of Fe in a p-type silicon wafer by an SPV method enabling improvement in the measurement accuracy for Fe concentrations of 1×10/cmor less. The method of measuring the concentration of Fe in a p-type silicon wafer includes measuring an Fe concentration in the p-type silicon wafer based on measurement using an SPV method. The measurement is performed in an atmosphere in which the total concentration of Na, NH, and Kis 1.750 μg/mor less, and the total concentration of F, Cl, NO, PO, Br, NO, and SOis 0.552 μg/mor less.

Method of measuring concentration of Fe in p-type silicon wafer and SPV measurement apparatus

Provided is a method of measuring the concentration of Fe in a p-type silicon wafer by an SPV method enabling improvement in the measurement accuracy for Fe concentrations of 1&#xd7;10/cmor less. The method of measuring the concentration of Fe in a p-type silicon wafer includes measuring an Fe concentration in the p-type silicon wafer based on measurement using an SPV method. The measurement is performed in an atmosphere in which the total concentration of Na, NH, and Kis 1.750 &#x3bc;g/mor less, and the total concentration of F, Cl, NO, PO, Br, NO, and SOis 0.552 &#x3bc;g/mor less.

A laser scattering defect inspection system includes: a stage unit that rotates a workpiece W and transports the workpiece W in one direction; a laser light source that emits a laser beam LB toward the workpiece W mounted on the stage unit; an optical deflector that scans the laser beam LB emitted from the laser light source on the workpiece W; an optical detector that detects the laser beam LB scattered from the surface of the workpiece W; a storage unit that stores defect inspection conditions for each inspection step of a manufacturing process of the workpiece W, where the conditions include the rotation speed and the moving speed of the workpiece W by the stage unit, the scan width on the workpiece W and the scan frequency by the optical deflector; and a control unit that reads the defect inspection conditions stored for each inspection step in the storage unit and controls the driving of the stage unit and the optical deflector under the conditions.

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Tokyo, Japan

Takehiro Tsunemori