Tokyo Electron Limited

Takehiro Fukada

Jun Sato

Shigehiro Miura

Hiroyuki Kikuchi

Masato Yonezawa

Yuji Sawada

Yoshitaka Enoki

A film forming method includes adsorbing an aminosilane gas on a substrate having a recess in a surface of the substrate, depositing a silicon oxide film on the substrate by supplying an oxidizing gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate, and performing a modifying process of the silicon oxide film by activating a mixed gas including nitrogen gas and hydrogen gas and supplying the activated mixed gas to the silicon oxide film.

Film forming method

A deposition method performed by a deposition apparatus is provided. The deposition apparatus includes an antenna that forms an inductive magnetic field in a plasma processing region; and a rotary table that revolves a substrate around a rotational center of the rotary table. The method includes: supplying an ignition gas containing a noble gas and an additive gas to the plasma processing region; setting electric power supplied to the antenna to a first predetermined value to form a plasma of the ignition gas; increasing the electric power to a second predetermined value; stopping the supply of the additive gas; switching a gas supplied to the plasma processing region from the ignition gas to a gas for forming the film; and lifting an end of the antenna on a side closer to the rotational center while maintaining a height of another end of the antenna.

Deposition method

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Iwate, Japan

Takehiro Fukada