Tokyo Electron Limited

Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Iwatani Corporation

Tokyo Electron Limi Ted

Takehiko Orii

Takayuki Toshima

Hiroki Ohno

Kazuyuki Mitsuoka

Miyako Kaneko

Itaru Kanno

Gen You

Satoru Tanaka

Mitsunori Nakamori

Mitsuaki Iwashita

Hiroshi Tomita

Yohei Sato

Hisashi Okuchi

Kenji Sekiguchi

Osamu Kuroda

Hidekazu Hayashi

Keiji Tanouchi

Noritaka Uchida

Nobuhiro Takahashi

Tadashi Iino

Hiromitsu Nanba

Tatsuya Nishida

Meitoku Aibara

Takashi Yabuta

Masaru Amai

Yasuo Asada

Takashi Tanaka

Kazuya Dobashi

Gentaro Goshi

Yusuke Saito

Yukimasa Saito

Kunihiko Koike

Keisuke Egashira

Koichi Izumi

Jun Lin

Linan Ji

Takehiko Senoo

Yu Yoshino

Kenichi Hara

Shinji Irie

Masahiro Mukoyama

Tadashi Shojo

Ayano Hagiwara

Keita Kanehira

Eiichi Nishimura

Yuji Kamikawa

Tatsuya Yamaguchi

Naoki Shindo

Norihiro Ito

Takuya Mori

Hiroshi Yano

Nobuo Konishi

Tsutae Omori

Hiroaki Inadomi

Masami Yamashita

Teruomi Minami

Satoru Shimura

Nobutaka Mizutani

Hisashi Kawano

Takanori Miyazaki

Yasushi Fujii

Shoi Suzuki

Hirotaka Maruyama

Yosuke Hachiya

Akira Fujita

Shinichiro Shimomura

Takayuki Niuya

Nobuhiko Mouri

Hiroyuki Mori

Tsukasa Watanabe

Kotaro Ooishi

Yukiko Kitajima

Kyouji Kohama

Tsuhung Huang

Yoshichika Tokuno

Kazuhito Miyata

Shunta Furutani

Yasuyuki Ido

Kenji Tanouchi

Kakeru Wada

There is provided a gas cluster processing device for performing a predetermined process on a workpiece by irradiating the workpiece with a gas cluster, including: a processing container in which the workpiece is disposed; a gas supply part configured to supply a gas for generating the gas cluster; a flow rate controller configured to control a flow rate of the gas supplied from the gas supply part; a cluster nozzle configured to receive the gas for generating the gas cluster at a predetermined supply pressure, spray the gas into the processing container maintained in a vacuum state, and convert the gas into the gas cluster through an adiabatic expansion; and a pressure control part provided in a pipe between the flow rate controller and the cluster nozzle and including a back pressure controller configured to control a supply pressure of the gas for generating the gas cluster.

Gas cluster processing device and gas cluster processing method

A technique of etching Si on a substrate having Si and another material with a high selectivity using a simple gas system is provided. In an etching method, the substrate having the Si and another material is provided, and the Si is selectively etched over the above-described another material by supplying a germanium-containing gas as an etching gas to the substrate.

Etching method and apparatus

An etching method is provided. In the etching method, a protective film-forming gas including an amine gas is supplied to a substrate having a surface on which a first film and a second film are formed, the first film and the second film having respective properties of being etched by an etching gas, and a protective film is formed to cover the first film such that the first film is selectively protected between the first film and the second film when the etching gas is supplied. Further, the second film is selectively etched by supplying the etching gas to the substrate after the protective film is formed.

Etching method and etching apparatus

A method for cleaning a substrate includes supplying to a substrate on which a resist layer is not formed a film-forming processing liquid which includes a volatile component and forms a film on the substrate, forming a processing film on the substrate by solidifying or curing the film-forming processing liquid supplied on the substrate, and supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate.

Substrate cleaning method, substrate cleaning system, and memory medium

There is provided a method of etching a silicon-containing film formed on a substrate, the method including: etching the silicon-containing film by using both a first fluorine-containing gas and a second fluorine-containing gas, the first fluorine-containing gas including at least an Fgas and the second fluorine-containing gas including at least a ClFgas, an IFgas, an IFgas or an SFgas.

Method of etching silicon-containing film, computer-readable storage medium, and apparatus for etching silicon-containing film

There is provided an etching method which includes: supplying an etching gas to a workpiece including a first SiGe-based material and a second SiGe-based material having different Ge concentrations; and selectively etching the first SiGe-based material and the second SiGe-based material with respect to the other using a difference in incubation time until the first SiGe-based material and the second SiGe-based material begin to be etched by the etching gas.

Etching method

A method for cleaning a substrate includes setting a substrate inside a cleaning chamber, supplying on a surface of the substrate a treatment solution which includes a volatile component and forms a treatment film, vaporizing the volatile component of the treatment solution supplied on the surface of the substrate such that the treatment solution solidifies or is cured on the surface of the substrate and the treatment film is formed on the surface of the substrate, and supplying onto the treatment film formed on the surface of the substrate a removal solution which removes the treatment film.

Substrate cleaning apparatus, substrate cleaning system, substrate cleaning method and memory medium

Productivity can be improved. A substrate processing method includes a processing liquid supplying process of supplying a processing liquid, which contains a volatile component and forms a film on a substrate, onto the substrate on which a pre-treatment, which requires atmosphere management or time management after the pre-treatment, is performed; and an accommodating process of accommodating, in a transfer container, the substrate on which the processing liquid is solidified or cured by volatilization of the volatile component.

Substrate processing method

A method for cleaning a substrate includes supplying to a substrate a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the substrate, supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate, and supplying to the processing film formed on the substrate a dissolving-processing liquid which dissolves the processing film after the supplying of the strip-processing liquid.

In an etching method for removing a processing target layer formed on a substrate for manufacturing electronic devices, a first break-through process of removing an oxide film formed on a surface of the processing target layer is performed, and a first main etching process of etching the processing target layer is performed after the first break-through process. Then, a second break-through process of removing the oxide film exposed after the first main etching process is performed, and a second main etching process of etching the processing target layer is performed after the second break-through process.

Etching method and substrate processing system

There is provided an etching method which includes: forming a blocking film configured to prevent an etching gas for etching a silicon-containing film from passing through each pore of a porous film and prevent the etching gas from being supplied to a film not to be etched, by supplying at least one film-forming gas to a substrate in which the silicon-containing film, the porous film, and the film not to be etched are sequentially formed adjacent to each other in a lateral direction; and etching the silicon-containing film by supplying the etching gas.

In the present disclosure, the high-pressure chamber includes a chamber main body including a flat rectangular parallelepiped block of a metal which is formed with a flat cavity that serves as a substrate processing space in which a processing using a high-pressure fluid is performed on a substrate, and the substrate processing space being formed by machining the block from one of faces of the block other than the widest face towards another face opposing thereto. In a case where the cavity is constituted as a through hole, the though hole is provided with a cover configured to open or close the cavity on one side of the through hole, and a second block configured to air-tightly seal the cavity on the other side.

High-pressure container, substrate processing apparatus, and method for manufacturing high-pressure container

A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.

Substrate processing method, substrate processing apparatus, and storage medium

Disclosed is a separation and regeneration apparatus including: a supercritical processing unit configured to generate a mixed gas including a first fluorine-containing organic solvent having a first boiling point and a second fluorine-containing organic solvent having a second boiling point lower than the first boiling point; and a distillation tank configured to store hot water having a temperature between the first boiling point and the second boiling point, in which the mixed gas is input into the hot water to be separated into the first fluorine-containing organic solvent in a liquid state and the second fluorine-containing organic solvent in a gas state, in which an introduction line configured to guide the mixed gas from the supercritical processing unit to the distillation tank is provided and a distal end of the introduction line is disposed in the hot water.

Separation and regeneration apparatus and substrate processing apparatus

Growing community of inventors

Nirasaki, Japan

Takehiko Orii