Applied Materials, Inc.

Takehiko Komatsu

Bryan Y Pu

Hongqing Shan

Jingbao Liu

Claes H Bjorkman

Keji Horioka

Yunsang Kim

Hongching Shan

Ruiping Wang

Kenny Linh Doan

Judy Wang

Melody Chang

Yungsang Kim

An oxide etch process practiced in a plasma etch reactor, such as a magnetically enhanced reactive ion etch (MERIE) reactor. The etching gas includes approximately equal amounts of a hydrogen-free fluorocarbon, most preferably C F , and oxygen and a much larger amount of argon diluent gas. The magnetic field is preferably maintained above about 50 gauss and the pressure at 40 milliTorr or above with chamber residence times of less than 70 milliseconds. A two-step process may be used for etching holes with very high aspect ratios. In the second step, the magnetic filed and the oxygen flow are reduced. Other fluorocarbons may be substituted which have F/C ratios of less than 2 and more preferably no more than 1.6 or 1.5.

Magnetically enhanced plasma oxide etch using hexafluorobutadiene

An oxide etch process practiced in magnetically enhanced reactive ion etch (MERIE) plasma reactor. The etching gas includes approximately equal amounts of a hydrogen-free fluorocarbon, most preferably C F , and oxygen and a much larger amount of argon diluent gas. The magnetic field is preferably maintained above about 50 gauss and the pressure at 40 milliTorr or above with chamber residence times of less than 70 milliseconds. A two-step process may be used for etching holes with very high aspect ratios. In the second step, the magnetic filed and the oxygen flow are reduced. Other fluorocarbons may be substituted which have F/C ratios of less than 2 and more preferably no more than 1.6 or 1.5.

Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas

A method for etching a dielectric in a thermally controlled plasma etch chamber with an expanded processing window. The method is adapted to incorporate benefits of a the thermal control and high evacuation capability of the chamber. Etchent gases include hydrocarbons, oxygen and inert gas. Explanation is provided for enablling the use of hexafluoro-1,3-butadiene in a capacitively coupled etch plasma. The method is very useful for creating via, self aligned contacts, dual damascene, and other dielectric etch.

Etch method using a dielectric etch chamber with expanded process window

A single-step plasma etch process for etching both oxide and nitride selectively to photoresist and silicon. The etching gas includes a fluorocarbon, difluoromethane, oxygen, and carbon monoxide. The fluorocarbon is preferably hydrogen free. Preferred fluorocarbons are hexafluorobutadiene (C F ), octafluorocyclobutane (C F ), and carbon tetrafluoride (CF ), of which C F is the most preferred. Approximately equal amounts are supplied of the fluorocarbon, difluoromethane, and oxygen and a significantly larger amount of carbon monoxide. The chemistry is also applicable to etching organo silicate glass selectively to photoresist.

Oxide/nitride etching having high selectivity to photoresist

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Chiba, Japan

Takehiko Komatsu