Tokyo Electron Limited

Other

Mitsubishi Gas Chemical Company, Inc.

Takayuki Niuya

Hiroyuki Mori

Hideto Gotoh

Tetsuo Aoyama

Kojiro Abe

Ryuji Sotoaka

Michihiro Ono

Takuya Goto

Hiroshi Matsunaga

Yoshiya Kimura

Fukusaburo Ishihara

Hideto Goto

Takehiko Orii

Hiroshi Yano

Mitsunori Nakamori

Taketo Maruyama

Yoshinori Marumo

Kyungho Park

Tetsuya Karita

Tsuyoshi Matsui

Katsusuke Shimizu

Fukusaburou Ishihara

A resist film and a polymer layer adhered on a semiconductor substrate can be removed by the method according to the present invention. A first processing liquid, typically including a oxidizing agent, such as hydrogen peroxide solution, is fed to the substrate, thereby the condition of the resist film and the polymer layer is changed. Next, a second processing liquid, typically including a dimethyl sulfoxide and an amine solvent, is fed to the substrate, thereby the resist film and the polymer layer is dissolved and lifted off from the substrate. A sputtered copper particles included in the polymer layer can also be removed.

Substrate processing method and substrate processing apparatus

The cleaning agent described above comprises a surfactant and an organic solvent, and the cleaning method described above is characterized by allowing the cleaning agent described above to flow on the surface of the material to be treated at a high speed to thereby clean the above surface. According to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.

Cleaning agent and cleaning method

The present invention is directed to suppressing the rise of a dielectric constant of insulating film during a procedure of burying wiring in semiconductor devices by using a damascene process, and it is also directed to simplifying a process of manufacturing the semiconductor devices. In terms of a process step of forming protection film on a metal layer during the damascene process, there is employed a combined arrangement of a wash unit where particles are removed from polished substrates with a processing unit where a solution containing an organic substance such as benzotriazole, which tends to be bound to the metal layers, is applied to the metal layers over the substrates after the particles are removed therefrom. For the combined arrangement of the processing unit and the wash unit, either a batch processing unit or a mono/serial processing unit can be employed.

Method of manufacturing semiconductor device and manufacturing apparatus

The object of the present invention is to provide a plating method capable of planarization process of high quality in comparison with the conventional plating method and also provide a plating device and a plating system adopting the plating method of the invention. In the plating method and device, an object to be processed and an electrode plate are dipped in a solution including objective metal ions and a forward current is supplied between the object and the electrode plate to educe a metal on the surface of the object. After forming a plating film on the object excessively, a backward current is supplied between the object and the electrode to uniformly remove at least part of superfluous plating film.

Method of forming a plated layer to a predetermined thickness

The cleaning method described above is characterized by allowing a cleaning agent comprising an oxidizing agent, a chelating agent and fluorine compound to flow on a surface of a material to be treated at a high speed to thereby clean the above surface according to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.

Cleaning method using an oxidizing agent, chelating agent and fluorine compound

There is provided a cleaning device capable of preventing a metal wiring layer or the like of an object to be treated, from being oxidized. The cleaning device comprises: a cleaning container having a treating space S having a slightly larger volume than that of an object W to be treated; a fluid storage tank for storing a cleaning fluid for treating the object; supply lines A through D for supplying the cleaning fluid from the fluid storage tank to the cleaning container; and reflux lines A through D for returning the cleaning fluid from the cleaning container to the fluid storage tank, wherein the cleaning container, the fluid storage tank, the supply lines and the reflux lines are associated with each other for forming closed cleaning fluid circulating lines A through D. Thus, it is possible to prevent the metal wiring layer or the like of the object from being oxidized.

Cleaning device, cleaning system, treating device and cleaning method

A cleaning agent for use in producing semiconductor devices. The cleaning agent is an aqueous solution containing (A) a fluorine-containing compound, (B) a salt of boric acid, (C) a water-soluble organic solvent, and optionally, (D) a specific quaternary ammonium salt or (D&prime;) a specific ammonium salt of an organic carboxylic acid or a specific amine salt of an organic carboxylic acid. The polymeric deposit inside and around the via holes and on the side wall of the conductive line pattern formed during the dry etching process can be effectively removed by using the cleaning agent without affecting the dimensions of the via holes and the conductive line pattern.

Cleaning agent for use in producing semiconductor devices and process for producing semiconductor devices using the same

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Tokyo-to, Japan

Takayuki Niuya