Kabushiki Kaisha Toshiba

Takayoshi Dohi

Yasuhisa Oana

Kaichi Fukuda

Takaaki Kamimura

Kunio Matumura

Nobuya Nagahisa

In patterning a silicon-containing thin film formed over an insulating substrate by means of vapor-phase chemical etching using a resist pattern formed on the thin film as a mask, a luminescence intensity A of wavelengths in a predetermined wavelength range and a luminescence intensity B at a specific wavelength are detected during the patterning. The luminescence intensity B is divided by the luminescence intensity A to produce a divide signal (B/A). The time of termination of the patterning is determined based on a change of the divide signal.

Semiconductor device manufacturing method and apparatus

In manufacturing a thin-film transistor on a glass substrate, a first thin film consisting of an amorphous silicon thin film is formed on the glass substrate, and a second thin film is formed on the first thin film. Then, this second thin film is etched to form a mask pattern. A dopant ion is doped into the first thin film through the mask pattern to form a source region and a drain region. The process of forming the mask pattern and the process of forming the source and drain regions are carried out continuously without exposing the substrate to the atmosphere.

Method of manufacturing semiconductor device and apparatus for manufacturing the same

Method for manufacturing semiconductor device using multiple steps

The present invention has a semiconductor device including a substrate made of an insulating material, a gate electrode formed on the substrate, a thin film made of a silicon semiconductor and formed on the gate electrode through a gate insulating film, a protective film formed on the thin film and having two opposing major surfaces, and a source electrode and a drain electrode formed to be electrically connected with the thin film, wherein the first major surface of the two major surfaces of the protective film is in contact with the thin film, and a region near the second major surface of the protective film contains oxygen. The present invention has a method of manufacturing a semiconductor device, in which a gate electrode is on a substrate made of an insulating material, a thin film made of a silicon semiconductor is formed on the gate electrode through a gate insulating film, a protective film having two opposing major surfaces in which a first major surface is in contact with the thin film and a region near a second major surface contains oxygen is formed on the thin film, and a source electrode and a drain electrode are formed to electrically connect with the thin film.

Growing community of inventors

Fukaya, Japan

Takayoshi Dohi