Nissin Ion Equipment Co., Ltd.

Nissin Electric Co., Ltd.

Takatoshi Yamashita

Tadashi Ikejiri

Tetsuya Igo

Hideki Fujita

Kohei Tanaka

Weijiang Zhao

Hideyuki Tanaka

Keiko Kuzawa

Hideyuki Fujiwara

A repeller structure is provided in a plasma generating chamber of an ion source facing a cathode that emits electrons for ionizing a source gas in the plasma generating chamber to generate a plasma. The repeller structure reflects the ions toward the cathode. The repeller structure includes a sputtering target that is sputtered by the plasma to emit predetermined ions, the sputtering target including a through hole that connects a sputtering surface and a back surface of the sputtering target; and an electrode body that is inserted in the through hole, the electrode body including a repeller surface that is exposed to the sputtering surface side through the through hole.

Repeller structure and ion source

An ion implanting apparatus includes: an electrostatic accelerating tube for causing an ion beam extracted from an ion source to have a desirable energy, and deflecting the ion beam to be incident on a target, the electrostatic accelerating tube including deflecting electrodes provided to interpose the ion beam therebetween. The deflecting electrodes include a first deflecting electrode and a second deflecting electrode to which different electric potentials from each other are set. The second deflecting electrode is provided on a side where the ion beam is to be deflected and includes an upstream electrode provided on an upstream side of the ion beam and a downstream electrode provided apart from the upstream electrode toward a downstream side. An electric potential of the upstream electrode and an electric potential of the downstream electrode are independently set from each other.

Ion implanting apparatus and deflecting electrode

An ion source includes a plasma generating chamber into which an ionization gas containing fluorine is introduced, a hot cathode provided on one side in the plasma generating chamber, an opposing reflecting electrode which is provided on other side in the plasma generating chamber and reflects electrons when a negative voltage is applied from a bias power supply to the opposing reflecting electrode, and a magnet for generating a magnetic field along a line, which connects the hot cathode and the opposing reflecting electrode, in the plasma generating chamber. The opposing reflecting electrode is formed of an aluminum containing material.

Ion source

To increase a transport efficiency of an ion beam by correcting Y-direction diffusion caused by the space charge effect of the ion beam between an ion beam deflector, which separates the ion beam and neutrons from each other, and a target. An ion implantation apparatus has a beam paralleling device that bends an ion beam scanned in an X direction by magnetic field to be parallel and draws a ribbon-shaped ion beam. The beam paralleling device serves also as an ion beam deflector that deflects the ion beam by magnetic field to separates neutrons from the ion beam. In the vicinity of an outlet of the beam paralleling device, there is provided an electric field lens having a plurality of electrodes opposed to each other in a Y direction with a space for passing the ion beam and narrowing the ion beam in the Y direction.

Ion implantation apparatus and method of correcting deviation angle of ion beam

This ion source generates a ribbon-like ion beam whose dimension in the Y direction is larger than the dimension in the X direction. This ion source includes a plasma generating vessel having an ion extraction port extending in the Y direction, a plurality of cathodes arranged in a plurality of stages along the Y direction on one side in the X direction in the plasma generating vessel, a reflecting electrode arranged on the other side in the X direction in the plasma generating vessel opposite to the cathodes, and electromagnets for generating magnetic fields along the X direction in regions including the plurality of cathodes in the plasma generating vessel.

Ion source, ion implantation apparatus, and ion implantation method

An extraction electrode of an ion source is dividedly configured by a first extraction electrode and a second extraction electrode. DC power supplies which form a potential difference between the electrodes, a camera which takes an image of the ion beam to output image data of the ion beam, and a rear-stage beam instrument which measures the beam current of the ion beam that has passed through the analysis slit are disposed. A step of adjusting an analysis electromagnet current so that the beam current measured by the rear-stage beam instrument is maximum, that of processing the image data from the camera to obtain the deviation angle of the ion beam entering the analysis slit from the design beam orbit, and that of, if the deviation angle is not within an allowable range, adjusting the potential difference between the electrodes so that the ion beam is bent to a direction where the deviation angle becomes small, by the potential difference are performed one or more times until the deviation angle is within the allowable range.

Ion implanting apparatus and method of correcting beam orbit

An ion source is to extract a ribbon-shaped ion beam longer in the Y direction in the Z direction and provided with a plasma generating chamber, a plasma electrode which is disposed near the end of the plasma generating chamber in the Z direction and has an ion extracting port extending in the Y direction, a plurality of cathodes for emitting electrons into the plasma generating chamber to generate a plasma and arranged in a plurality of stages along the Y direction, and a magnetic coil which generates magnetic fields along the Z direction in a domain containing the plurality of cathodes inside the plasma generating chamber.

Ion source and ion implantation apparatus

An ion source is provided that can generate an ion beam in which the width is wide, the beam current is large, and the uniformity of the beam current distribution in the width direction is high, and that can prolong the lifetime of a cathode. The ion sourcehas: a plasma generating chamberhaving an ion extraction portextending in the X direction; a magnetwhich generates a magnetic fieldextending along the X direction, in the plasma generating chamber; indirectly-heated cathodeswhich are placed respectively on the both sides of the plasma generating chamberin the X direction, and which are used for generating a plasma iin the chamber, and increasing or decreasing the density of the whole of the plasma; and plural filament cathodeswhich are juxtaposed in the X direction in the plasma generating chamberand which are used for generating the plasma iin the chamber, and controlling the density distribution of the plasma

Ion source and method for operating same

An analyzing electromagnet constituting an ion implanter has a first inner coil, a second inner coil, three first outer coils, three second outer coils, and a yoke. The inner coils are saddle-shaped coils cooperating with each other to generate a main magnetic field which bends an ion beam in the X direction. Each of the outer coils is a saddle-shaped coil which generates a sub-magnetic field correcting the main magnetic field. Each of the coils has a configuration where a notched portion is disposed in a fan-shaped cylindrical stacked coil configured by: winding a laminations of an insulation sheet and a conductor sheet in multiple turn on an outer peripheral face of a laminated insulator; and forming a laminated insulator on an outer peripheral face.

Ion implanter

The ion implanter has: an ion source which generates an ion beam; electron beam sources which emit an electron beam to be scanned in the Y direction in the ion source; a power source for the sources; an ion beam monitor which, in the vicinity of an implanting position, measures a Y-direction ion beam current density distribution of the ion beam; and a controlling device. The controlling device has a function of homogenizing the Y-direction ion beam current density distribution measured by the monitor, by, while controlling the power sources on the basis of measurement data of the monitor, increasing a scanning speed of the electron beam in a position corresponding to a monitor point where an ion beam current density measured by the monitor is large; and decreasing the scanning speed of the electron beam in a position corresponding to a monitor point where the measured ion beam current density is small.

An electric field lens includes an entrance electrode, an intermediate electrode, and an exit electrode that are arranged in a traveling direction of ion beams. The intermediate electrode is maintained in a positive potential, and the entrance electrode and the exit electrode are maintained in a ground potential. In addition, the electric field lens includes a first control electrode and a second control electrode that are disposed between the entrance electrode and the intermediate electrode and between the intermediate electrode and the exit electrode, respectively and maintained in a negative potential.

Electric field lens and ion implanter having the same

An apparatus is provided which is capable of measuring an angle between a holder and an ion beam without generating particles, with a simple structure, in a short time and at high accuracy even during an implantation state. An angle measurement apparatus is configured to: measure an angle of the ion beam by measuring beam plasma produced and emitting light when the ion beam collides with residual gas, with two cameras at two positions in a beam traveling direction; measure an angle of the holder by measuring light from a linear light source provided on the holder; and thereby measure the angle between the ion beam and the holder.

Ion implanter, and angle measurement apparatus and beam divergence measurement apparatus for ion implanter

This electrostatic acceleration column has first to fifth electrodes arranged in a traveling direction of ions, which are a kind of charged particles. Then, the second electrode divided into two electrode members, which are opposed to each other across a path of the ions, and to which different electric potentials are applied to deflect the ions. Further, the electrodes arranged on a downstream side from the electrode are arranged along an orbit of ions deflected by the electrode and having specific energy.

Electrostatic accelerator and ion implanting apparatus with the same

The particle implantation apparatus comprises a target, an ion beam source, a target scanning mechanism, a slit plate, a holder, and a holder scanning mechanism. The target is used for sputtering. The ion beam source applies an ion beam apparently like a sheet wider in the X direction onto the target so as to generate sputter particles. The target scanning mechanism mechanically scans the target in the Y direction crossing the X direction in reciprocating manner at a fixed angle with respect to the ion beam. The slit plate is used for passing sputter particles generated from the target and has a long slit extending in the X direction. The holder holds a substrate at the position where sputter particles having passed through the slit are incident. The holder scanning mechanism mechanically scans the holder in the Z direction crossing both the X and Y directions in reciprocating manner.

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Kyoto, Japan

Takatoshi Yamashita