Tokyo Electron Limited

Takashi Shigeoka

Takeshi Sakuma

Yicheng Li

Masayuki Kitamura

Tadahiro Ishizaka

Yasuhiko Kojima

Eisuke Morisaki

Yasuhiro Oshima

Nobuaki Takahashi

Atsushi Gomi

Junichi Arami

Kohei Kawamura

Naoki Yoshii

Hiroshi Kannan

Yukio Fukuda

Shouqian Shao

A substrate processing unit comprises a processing vessel for receiving a substrate, a cleaning gas supply system for supplying cleaning gas to the processing vessel so as to clean the interior of the processing vessel, an exhauster for exhausting the processing vessel, an operating state detector for detecting the operating state of the exhauster, and an end point detector for detecting the end point of the cleaning on the basis of the detection result from the operating state detector.

Substrate processing unit, method of detecting end point of cleaning of substrate processing unit, and method of detecting end point of substrate processing

A processing apparatus is disclosed which is capable of switching supplies of a raw material gas and a reducing gas alternately, while continuously forming a plasma of the reducing gas. An excitation device () excites a reducing gas supplied thereinto, and the excited reducing gas is supplied into a process chamber (). A switching mechanism () is arranged between the excitation device () and the process chamber (), and a bypass line () is connected to the switching mechanism (). The switching mechanism () switches the flow of the excited reducing gas from the excitation device () between the process chamber () and the bypass line ().

Gas switching mechanism for plasma processing apparatus

A thermal processing system performs predetermined thermal processing on an approximately circular to-be-processed object, by applying radiant heat to the to-be-processed object by means of a heating lamp system. The heating lamp system comprises a plurality of lamps disposed concentrically so as to correspond to the to-be-processed object. The plurality of lamps are controlled individually for respective zones of the to-be-processed object.

Thermal processing system

A heat treatment apparatus achieves a uniform and rapid temperature rise of an object to be processed. A plurality of double-end lamps heat the object to be processed so as to apply a heat treatment process to the object. A plurality of reflectors reflect radiation heat of the double-end lamps toward the object to be processed. Each of the double-end lamps includes a rectilinear light-emitting part and at least two double-end lamps among the plurality of double-end lamps are arranged along a longitudinal direction of the light-emitting part, or each of the double-end lamps includes a rectilinear light-emitting part and the plurality of double-end lamps are arranged so that the light-emitting parts are parallel to each other and positioned in at least two stages.

Heating device, heat treatment apparatus having the heating device and method for controlling heat treatment

A method of temperature measurement for measuring a temperature of an object to be measured that is heated by a heating source in a multiplex-reflection environment by using two radiation thermometers provided at a measurement part separated from the object to be measured is provided. In the method, two of the radiation thermometers have a rod that is embedded in the measurement part and can receive radiation light from the object to be measured, and an optical fiber connected to the rod; numerical apertures of the radiation thermometers are different; the multiplex-reflection environment is formed between a surface of the measurement part facing the object to be measured and the measurement part; a radiation rate &#x3b5; of the object to be measured based on a result of a measurement of two of the thermometers and the temperature of the object to be measured is calculated by the following equations&#x3b1;=1&#x2212;(1&#x2212;)&#x3b5;=(1&#x2212;&#x3b1;)&#xb7;&#x3b5;+&#x3b1;&#xb7;&#x3b5;/{1&#x2212;&#xb7;(1&#x2212;&#x3b5;)}wherein Drepresents a diameter of the rod of the radiation thermometers, NA represents the numerical aperture, Drepresents a distance between the object to be measured and the surface of the measurement part, r represents a reflectivity of the surface of the measurement part, F represents a view factor, &#x3b1; represents a multiplex reflection coefficient, &#x3b5;represents an effective radiation rate of the object to be measured, and Nand Nare parameters.

Temperature measuring method, heat treating device and method, computer program, and radiation thermometer

A lamp for a heat treatment apparatus that provides a rapid temperature rise without using a reflector. The lamp has at least one electrode part to which an electric power is supplied. A light-emitting part, connected to the electrode part, seals a filament for emitting light. A high-reflectance film is formed on an outer surface of a first portion of the light-emitting part so as to reflect light emitted from the filament. Reflected light exits from the light-emitting part through a second portion not having a film formed thereon. Accordingly, directivity of light exiting from the second portion of the light-emitting part is improved.

Lamp having a high-reflectance film for improving directivity of light and heat treatment apparatus having such a lamp

A thermal process apparatus for a semiconductor substrate, including a heating source heating the semiconductor substrate by irradiating a light on one side of the semiconductor substrate, a reflection plate facing to the semiconductor substrate in a state where a reflection cavity is formed with another side of the semiconductor substrate, a thermometer having a light-receiving part provided on the refection plate so as to measure a temperature of the semiconductor substrate by catching a radiation beam from the semiconductor substrate heated by the heating source by the light-receiving part; and light absorption means provided around the light-receiving part for absorbing a diffuse reflection light generated in the reflection cavity.

Thermal process apparatus for a semiconductor substrate

A heat treatment apparatus applies an accurate heat treatment to a wafer by performing an accurate measurement of a temperature of a wafer by a radiation thermometer. Halogen lamps heat the wafer by irradiating a light on a front surface of the wafer. A guard ring supports the wafer so that the front surface of the wafer faces the halogen lamps. A gap is formed between the guard ring and a back surface of the wafer. The radiation thermometer detects a light radiated from the backside of the wafer by a quartz rod facing the backside of the substrate. The wafer placed on the guard ring defines a first space on the front surface side of the wafer and a second space on the back surface side of the wafer. The gap is configured and arranged so that an incident rate of a stray light entering the second space from the first space through the gap and incident on the quartz rod is equal to or less than a predetermined value, where the incident rate is defined by a ratio of an amount of the stray light incident on the quartz rod to an amount of light radiated by the halogen lamps.

Thermal process apparatus for measuring accurate temperature by a radiation thermometer

The present invention intends to improve the accuracy of temperature measurement when measuring the temperature of a semiconductor wafer by a radiation thermometer on the basis of the idea of virtual blackbody simulated by multiple reflection of light. A system includes a wafer (W), a circular reflector of a radius R disposed opposite to the wafer (W), and a probe ( ) disposed in a through hole formed in the reflector ( ). The probe ( ) is a through hole. The radiation intensity of radiation passed the through hole is determined by image data provided by a CCD camera disposed behind the back surface of the reflector ( ). An error in measured radiation intensity of radiation falling the probe ( ) due to light that enters a space between the wafer (W) and the reflector ( ) and a space between the reflector ( ) and the probe ( ) and light leaks from the same spaces is corrected, the emissivity of the wafer (W) is calculated and the temperature of the wafer (W) is determined.

Radiation temperature measuring method and radiation temperature measuring system

Temperature measuring method, temperature control method and processing apparatus

A virtual blackbody radiation system ( ) includes a light-emitting unit ( ) including an LED driven by a fixed current, a light-receiving unit ( ) including a sapphire rod, and an optical unit ( ) including lenses ( ) for converging light emitted by the light-emitting unit in a convergent light. A cylindrical member ( )included in the optical unit ( )can be moved along the optical axis by a servomotor ( ) included in a focus adjusting unit ( ) for positional adjustment. The focus of convergent light relative to the light-receiving unit ( ) can be adjusted by moving the lens ( ) disposed in the cylindrical member ( ) along the optical axis relative to the light-receiving unit ( ). The intensity of the convergent light on the light-receiving unit ( ) can be adjusted to the intensity of predetermined blackbody radiation. Thus, the virtual blackbody radiation system ( ) is able to obtain light of a desired intensity without changing the driving current for driving a light source; consequently, the life time of the light source can be extended and the stability of radiation can be improved.

Virtual blackbody radiation system and radiation temperature measuring system

A quartz window decreases an amount of absorption of heat from a heat source while maintaining a pressure difference between the pressure inside a process chamber and an atmospheric pressure. The process chamber defines a process space for processing an object to be processes. A placement stage is provided in the process chamber so as to place the object to be processed thereon. A gas supply part which supplies to the process chamber a process gas for processing the object to be processed. The quartz window is provided as a part of the process chamber so that the quartz window is opposite to the object to be processed placed on the placement stage. A heating unit has a heat radiation lamp provided on an opposite side of the process chamber with respect to the light-transmitting window. The quartz window constitutes a convex lens part which is formed on a periphery of the quartz window and protrudes into the process space.

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Nirasaki, Japan

Takashi Shigeoka