Merck Patent Gmbh

Az Electronic Materials USA Corp.

Az Electronic Materials (luxembourg) S.a.r.l.

Takashi Sekito

Shigemasa Nakasugi

Hiroshi Yanagita

Toshiaki Nonaka

Daishi Yokoyama

Takashi Fuke

Yuriko Matsuura

Yusuke Hama

Yuji Tashiro

Kazuma Yamamoto

Masahiro Ishii

Yasuaki Tanaka

Tatsuro Nagahara

M Dalil Rahman

Go Noya

Masakazu Kobayashi

Tetsuo Okayasu

Noboru Satake

Yoshihiro Miyamoto

Yuki Tashiro

Kazunori Kurosawa

Taku Hirayama

To provide a method for manufacturing a cured film having high film density, high film hardness and high etching resistance. A method for manufacturing a cured film comprising (1) applying a composition (i) above a substrate; (2) forming a hydro-carbon-containing film from the composition (i); and (3) irradiating the hydrocarbon-containing film with plasma, electron beam and/or ion to form a cured film. Use of the cured film.

Method for manufacturing cured film and use of the same

[Problem to be Solved] An object is to provide a compound with good heat resistance. And another object is to provide a coating made exhibits less film shrinkage, good gap filling property and good planarization. [Solution] The present invention provides an ethynyl derived composite and a composition comprising thereof. And the present invention provides a method for manufacturing a coating by it, and a method for manufacturing a device.

Ethynyl derived composite, a composition comprising thereof, a method for manufacturing a coating by it, and a method for manufacturing a device comprising the coating

The present invention relates to a composition comprising; components a) b) and d); wherein, component a) is a metal compound having the structure (I), component b) is a spin on high carbon polymer, having a polymer backbone comprising mono-cyclic aromatic hydrocarbon, fused-ring ring hydrocarbon moieties, or mixtures of these, having a wt. % of carbon from about 81 wt. % to about 94 wt. %, which is soluble to at least about 5 wt. % in a spin casting solvent, and wherein at least one, of said mono-cyclic aromatic hydrocarbon or said fused-ring ring hydrocarbon moieties, present in said spin on high carbon polymer, is functionalized with at least one alkynyloxy moiety of structure (VIII), and component d) is a spin casting solvent. The present invention further relates to using this composition in methods for manufacturing electronic devices through either the formation of a patterned films of high K material comprised of a metal oxide on a semiconductor substrate, or through the formation of patterned metal oxide comprised layer overlaying a semiconductor substrate which may be used to selectively etch the semiconductor substrate with a fluorine plasma.

Spin-on compositions comprising an inorganic oxide component and an alkynyloxy substituted spin-on carbon component useful as hard masks and filling materials with improved shelf life

An object is to provide a semiconductor material and coating having high solubility in solvents and having advantageous filling property, high heat resistance, and/or high etching resistance. Another object is to provide a method for manufacturing a semiconductor using the semiconductor material. Still another object is to provide a novel compound. Provided are: a semiconductor material consisting of a specific aromatic hydrocarbon ring derivative; methods for manufacturing a coating and a semiconductor using the semiconductor material; and a compound consisting of a specific aromatic hydrocarbon ring derivative.

Compound, semiconductor material, and methods for manufacturing coating and semiconductor using the same

The present invention provides a resist underlayer forming composition, which is well in heat resistance and gap filling. Further, the present invention provides methods of manufacturing a resist underlayer and semiconductor device using it. [Means for Solution] A composition comprising a allyloxy derivative having a specific group and a solvent, and methods of manufacturing a resist underlayer and semiconductor device using it.

Allyloxy derivative, resist underlayer forming composition using the same, and method of manufacturing resist underlayer and semiconductor device using the same

The present invention provides a composition enabling to form a fine negative photoresist pattern free from troubles such as surface roughness, bridge defects or unresolved defects, and the invention also provides a pattern formation method employing that composition. The composition is used for miniaturizing a resist pattern by applying to a negative resist pattern from a chemically amplified resist composition and fattening the resist pattern. This composition comprises a polymer comprising a repeating unit having an amino group or a polymer mixture, and a solvent, and further comprises a specific amount of an acid or indicates a specific pH value. The polymer mixture comprises polymers whose HSP distance, determined from Hansen solubility parameter, is 3 or more. In the pattern formation method, the composition is cast on a negative photoresist pattern beforehand obtained by development with an organic solvent developer and is then heated to form a fine pattern.

Fine resist pattern-forming composition and pattern forming method using same

[Object] To provide a composition enabling to form a fine negative photoresist pattern free from troubles, such as, surface roughness, bridge defects, and resolution failure; and also to provide a pattern formation method using that composition. [Means to Solve the Problem] A fine pattern-forming composition is used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition. The fine pattern-forming composition comprises a polymer comprising a repeating unit having a structure of the following formula (A), (B) or (C): and a solvent. This composition is cast on a negative resist pattern obtained by development with an organic solvent developer, and then heated to form a fine pattern.

Composition for forming fine resist pattern and pattern forming method using same

The present invention provides a composition enabling to form a fine negative photoresist pattern less suffering from surface roughness, and also provides a pattern formation method employing that composition. The composition is used for miniaturizing a resist pattern by fattening in a process of forming a positive resist pattern from a chemically amplified positive-working type resist composition, and it contains a polymer comprising a repeating unit having an amino group, a solvent, and an acid. In the pattern formation method, the composition is cast on a positive photoresist pattern beforehand obtained by development and is then heated to form a fine pattern.

Composition for forming fine resist pattern, and pattern formation method using same

The present invention provides a fine pattern-forming composition enabling to form a resist pattern having high dry etching resistance, and also provides a pattern formation method using that composition. This formation method hardly causes pipe blockages in the production process. The composition is used for miniaturizing a resist pattern by fattening in a process of forming a negative resist pattern from a chemically amplified resist composition, and comprises a polymer containing a repeating unit having a hydroxyaryl group and an organic solvent not dissolving the negative resist pattern. In the formation method, the fine pattern-forming composition and the resist composition are individually cast with the same coating apparatus, so as to prevent pipe blockages.

Composition for forming fine resist pattern and pattern formation method using same

[Object] To provide a photosensitive siloxane resin composition excellent in alkali-solubility and in sensitivity, and also to provide a pattern-formation method employing that. [Means] The present invention provides a photosensitive siloxane resin composition comprising: a siloxane resin having silanol groups or alkoxysilyl groups, a crown ether, a photosensitive material, and an organic solvent. This photosensitive composition is cast on a substrate, subjected to imagewise exposure, treated with an alkali aqueous solution, and cured to form a pattern.

Photosensitive siloxane resin composition

A positive photosensitive siloxane composition comprising at least three types of following polysiloxanes (A), (B) and (C) obtained by hydrolyzing and condensing a silane compound represented by general formula (1) RSi (OR), a diazonaphthoquinone derivative, and a solvent: a polysiloxane (A) such that if pre-baked the film thereof will be soluble in a 5 weight % TMAH aqueous solution and the solution rate of said film will be 1,000 &#x212b;/sec or less; a polysiloxane (B) such that if pre-baked the solution rate of the film thereof will be 4,000 &#x212b;/sec or more relative to a 2.38 weight % TMAH aqueous solution; and a polysiloxane (C) such that if pre-baked the solution rate of the film thereof will be between 200 and 3,000 &#x212b;/sec relative to a 2.38 weight % TMAH aqueous solution. (In the formula, Rrepresents a C1-20 linear or branched cyclic alkyl group, in which any methylene may be substituted by oxygen, or a C6-20 aryl group, in which any hydrogen may be substituted by fluorine; n represents a 0 or a 1; and Rrepresents a C1-5 alkyl group.)

Positive photosensitive siloxane composition

[Object] To provide a coating composition excellent in coatability and free from viscosity increase caused by degradation over time, and also to provide a hardened film-formation method employing that. [Means] The present invention provides a coating composition comprising: a siloxane resin having silanol groups or alkoxysilyl groups, and a polyol having hydroxyl groups at both ends of a straight 2 to 5 carbon atom hydrocarbon chain. This coating composition enables to form a hardened film of high transparency, of high insulation and of low dielectricity.

Coating composition containing siloxane resin

A positive photosensitive siloxane composition containing: a polysiloxane (Ia), which is obtained by hydrolyzing and condensing the silane compound represented by RSi(OR)in general formula (1) and the silane compound represented by Si(OR)in general formula (2) in the presence of a basic catalyst, and a pre-baked film of which has a dissolution rate of 1,000 &#x212b;/second or less in a 5 wt % TMAH aqueous solution; a polysiloxane (Ib), which is obtained by hydrolyzing and condensing at least the silane compound represented by general formula (1) in the presence of an acid or basic catalyst, and a pre-baked film of which has a dissolution rate of 100 &#x212b;/second or more in a 2.38 wt % TMAH aqueous solution; and a diazonaphthoquinone derivative and solvent. (In the formula: R represents a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, in which any methylene may be replaced by oxygen, or represents an aryl group having 6 to 20 carbon atoms, in which any hydrogen may be replaced by fluorine; and Ris an alkyl group having 1 to 5 carbon atoms.)

Growing community of inventors

Kakegawa, Japan

Takashi Sekito