Nissin Electric Co., Ltd.

Nissin Ion Equipment Co., Ltd.

Takashi Nogami

Kohei Tanaka

Masayoshi Hino

Yoshihiro Tanaka

An ion implanter performs ion implantation by irradiating a wafer having a notch at its outer peripheral region by an ion beam. In ion implanter, a twist angle adjustment mechanism is configured to adjust a twist angle, an aligner is configured to adjust an alignment angle, a wafer transfer device is configured to transfer the wafer between the aligner and the twist angle adjustment mechanism, an image processing device is configured to detect the twist angle of the wafer on the twist angle adjustment mechanism, and a control device is configured to carry out a twist control in which the wafer is rotated by the twist angle adjustment mechanism by an angle obtained from a first difference between the detected twist angle and the alignment angle and a second difference between the alignment angle and a target twist angle given as one of ion implantation conditions.

Wafer handling method and ion implanter

A rotary section current transmitting mechanism includes a rotary member having an outer wall of a circular cross-section and a stationary member provided around the rotary member with separation from the rotary member by ring-shaped space so as to form concentric circles with the rotary member, and having an inner wall of a circular cross-section. The ring-shaped space accommodates a film-shaped wire. Both ends of the film-shaped wire are fixed in the same direction respectively to wire fixing sections of the rotary member and of the stationary member, and the film-shaped wire curves between the both ends. The film-shaped wire has a configuration in which conductors are sandwiched between insulating films. This configuration enables electric current to be stably transmitted from the stationary member to the rotary member which rotates forward and backward within a predetermined angle.

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Kyoto, Japan

Takashi Nogami