Applied Materials, Inc.

Takashi Morii

Kwangduk Douglas Lee

Yoichi Suzuki

Michael Wenyoung Tsiang

Yuta Goto

Deenesh Padhi

Bok Hoen Kim

Martin Jay Seamons

Sudha S Rathi

Cynthia Pagdanganan

The present disclosure generally relates to a method for performing semiconductor device fabrication, and more particularly, to improvements in lithographic overlay techniques. The method for improved overlay includes depositing a material on a substrate, heating a substrate in a chamber using thermal energy, measuring a local stress pattern of each substrate, wherein measuring the local stress pattern measures an amount of change in a depth of the deposited material on the substrate, plotting a plurality of points on a k map to determine a local stress pattern of the substrate, adjusting the thermal energy applied to the points on the k map, determining a sensitivity value for each of the points on the k map, and applying a correction factor to the applied thermal energy to adjust the local stress pattern.

Method for PECVD overlay improvement

Methods and apparatus for depositing an amorphous carbon layer on a substrate are provided. In one embodiment, a deposition process includes positioning a substrate in a substrate processing chamber, introducing a hydrocarbon source having a carbon to hydrogen atom ratio of greater than 1:2 into the processing chamber, introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the processing chamber, with the hydrocarbon source having a volumetric flow rate to plasma initiating gas volumetric flow rate ratio of 1:2 or greater, generating a plasma in the processing chamber, and forming a conformal amorphous carbon layer on the substrate.

Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (PECVD)

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Wakayama, Japan

Takashi Morii