Kabushiki Kaisha Toshiba

D2s, Inc.

Cadence Design Systems, Inc.

Takashi Mitsuhashi

Akira Fujimura

Shohei Matsushita

Mutsunori Igarashi

Masaaki Yamada

Fumihiro Minami

Masami Murakata

Zhigang Wu

Lance Glasser

Kazuyuki Hagiwara

Takahiro Aoki

Kenji Yoshida

Dmitri Lapanik

Katsuo Komuro

Toshihiro Akiyama

Daisuke Hara

Takashi Ishioka

Yukihiro Ushiku

Taku Uchino

Donald Benton MacMillen

Larry Lam Chau

Tam Dinh Thanh Nguyen

James Fong

Dmitri Lanpanik

Various embodiments of the present invention relate to particle beam writing to fabricate an integrated circuit on a wafer. In various embodiments, cell projection (CP) cell library information is stored in the form of a data structure. Subsequently, the CP cell library information is referenced by a writing system. The patterns are written on the wafer depending on the referenced CP cell library.

Method and system for stencil design for particle beam writing

A system and method for improved electron beam writing that is capable of taking design intent, equipment capability and design requirements into consideration. The system and method determines an optimal writing pattern based, at least in part, on the received information.

System and method of electron beam writing

The present invention increases the number of characters available on a stencil for charged particle beam lithography. A stencil for charged particle beam lithography is disclosed, comprising two character projection (CP) characters, wherein the blanking areas for the two CP characters overlap. A stencil is also disclosed comprising two CP characters with one or more optional characters between the two characters, wherein the optional characters can form meaningful patterns on a surface only in combination with one of the two characters. A stencil is also disclosed wherein the blanking area of a CP character extends beyond the boundary of the stencil's available character area. Methods for design of the aforementioned stencils are also disclosed.

Cell projection charged particle beam lithography

A method and system for lithography simulation and measurement of critical dimensions with improved CD marker generation and placement is disclosed. The method and system specify a position for measuring a difference between a lithography image and a target pattern, generate one or more CD marker candidates, and select at least one CD marker from the one or more CD marker candidates.

Method and system for lithography simulation and measurement of critical dimensions with improved CD marker generation and placement

A method and system for lithography simulation is disclosed. The method and system specify a subject region of a lithography image with a CD marker, specify a threshold intensity over the lithography image, specify a gradient to a threshold value of the threshold intensity, and calculate a sensitivity or ratio of change of an image boundary of the lithography image to lithography process variation.

Method and system for lithography simulation and measurement of critical dimensions

Stencil masks, particle beam lithography characters and methods for designing the same for use in particle beam lithography are disclosed. The masks, characters and methods for designing them allows for more accurately writing images by reducing various chemical and physical effects, particularly Coulomb and proximity effects. Particle current reaching a surface is reduced by introducing shield areas, which preserve the shape and fidelity of the written image. The shape of the written image is further corrected by systematically adjusting the shape of the character or mask.

Stencil, stencil design system and method for cell projection particle beam lithography

A method of particle beam lithography includes selecting at least two cell patterns from a stencil, correcting proximity effect by dose control and by pattern modification for the at least two cell patterns, and writing the at least cell two patterns by one shot of the particle beam after proximity effect correction (PEC).

Method and system for proximity effect and dose correction for a particle beam writing device

A method for optical proximity correction of a design of a pattern on a surface is disclosed with the method comprising the steps of inputting desired patterns for the substrate and inputting a set of characters some of which are complex characters that may be used for forming the patterns on the surface. A method of creating glyphs is also disclosed.

Method for optical proximity correction of a reticle to be manufactured using character projection lithography

A method for particle beam lithography, such as electron beam (EB) lithography, includes forming a plurality of cell patterns on a stencil mask and shaping one or more of the cell patterns with a polygonal-shaped contour. A first polygonal-shaped cell pattern is exposed to a particle beam so as to project the first polygonal-shaped cell pattern on a substrate. A second polygonal-shaped cell pattern, having a contour that mates with the contour of the first polygonal-shaped cell pattern, is exposed to the particle beam, such as an electron beam, so as to project the second polygonal-shaped cell pattern adjacent to the first polygonal-shaped cell pattern to thereby form a combined cell with the contour of the first polygonal-shaped cell pattern mated to the contour of the second polygonal-shaped cell pattern. The polygonal-shaped contour of the first and second cell patterns may comprise a rectilinear-shaped contour.

Method and system for improving particle beam lithography

A method and system for dose correction of a particle beam writer is disclosed. The method and system includes reading a file of writing objects that includes dose intensity, calculating a rate of dose intensity change between adjacent writing objects, selecting a writing object that may need accuracy improvement of dose correction based on the rate of dose intensity change, and improving accuracy of the dose correction of the writing object that is selected and its adjacent objects.

Method and system for improvement of dose correction for particle beam writers

A method and system for particle beam lithography, such as electron beam (EB) lithography, is disclosed. The method and system include selecting one of a plurality of cell patterns from a stencil mask and partially exposing the cell pattern to a particle beam, such as an electron beam, so as to selectively project a portion of the cell pattern on a substrate.

Stencil design and method for cell projection particle beam lithography

A method for fracturing or mask data preparation or proximity effect correction is disclosed which comprises the steps of inputting patterns to be formed on a surface, a subset of the patterns being slightly different variations of each other and selecting a set of characters some of which are complex characters to be used to form the number of patterns, and reducing shot count or total write time by use of a character varying technique. A system for fracturing or mask data preparation or proximity effect correction is also disclosed.

Method and system for design of a reticle to be manufactured using character projection lithography

A method for manufacturing a surface, the surface having a multiplicity of slightly different patterns, is disclosed with the method comprising the steps of designing a stencil mask having a set of characters for forming the patterns on the surface and reducing shot count or total write time by use of a character varying technique. A system for manufacturing a surface is also disclosed.

Growing community of inventors

Fujisawa, Japan

Takashi Mitsuhashi