Fujitsu Corporation

Takashi Kurimoto

Moritaka Nakamura

Katsuhiko Iizuka

The ashing method comprises the steps of forming resist on a part of an underlying layer, ion-implanting elements into the underlying layer and the resist, placing the resist in radical atmosphere including oxygen radical and then ashing an upper layer portion which includes the impurity elements and is formed an a surface of the resist, and ashing remaining portion of the resist by increasing an amount of the oxygen radical in the radical atmosphere.

Ashing method

Plasma etching with hydrogen bromide or bromine as an etching gas allows a precise control in attaining vertical etching or taper etching with a desired taper angle by controlling the temperature of a mass to be etched, which mass is usually a semiconductor wafer.

Method of dry etching with hydrogen bromide or bromide

Plasma etching with hydrogen bromide or bromine as an etching gas allows a precise control of attaining vertical etching or taper etching with a desired taper angle by controlling a temperature of a mass to be etched, which mass is a phosphorus-doped n-type polycrystalline silicon, phosphorus-doped single crystalline or phosphorus-doped silicides semiconductor wafer.

Dry etching with hydrogen bromide or bromine

A method of reactive ion etching (RIE) of aluminum or an alloy thereof (Al) in which a substrate with an Al layer coated thereon is maintained at a temperature of 60.degree. C. or less by cooling the substrate, so that the Al layer is taperingly etched to form conductor lines having sloped sidewalls. The substrate is clamped to a cooled electrode stage by an electrostatic chuck.

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Hashima, Japan

Takashi Kurimoto