Tokyo Electron Limited

Nippon Tungsten Co., Ltd.

Takashi Ikeda

Nobuyuki Nagayama

Takahiro Murakami

Naoyuki Satoh

Koichi Murakami

Hiroyuki Masutomi

Kenji Fujimoto

Hajime Ishii

Koji Yamashita

Koji Tanaka

Hitoshi Kosugi

Takao Inada

Tsukasa Hirayama

Toshiyuki Shiokawa

A substrate liquid processing apparatus includes an inner tubA having a top opening and storing a processing liquid therein; an outer tubB provided outside the inner tub; a first cover bodyconfigured to move between a closing position where a first region of the top opening is closed and an opening position where the first region is opened; and a second cover bodyconfigured to move between a closing position where a second region of the top opening is closed and an opening position where the second region is opened. The first cover body has a bottom wallR and a sidewallR extended upwards therefrom, and the second cover body has a bottom wallR and a sidewallR extended upwards therefrom. Further, when being placed at the closing positions, the sidewalls closely face each other with a gap G having a height H.

Substrate liquid processing apparatus

Provided is a member for a plasma processing apparatus consisting of a tungsten carbide phase. The member includes at least one type of atom selected from the group consisting of a Fe atom, a Co atom, and a Ni atom, in which the total content of the atoms is in a range of 30 to 3300 atomic ppm.

Member for plasma processing apparatus and plasma processing apparatus with the same

A member for a plasma processing apparatus has a tungsten carbide phase, and a sub-phase including at least one selected from the group consisting of phase I to IV, and phase V, in which the phase I is a carbide phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase II is a nitride phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase III is a carbonitride phase containing, as a constituent element, at least one of the elements of Group IV, Group V, and Group VI of the periodic table excluding W, the phase IV is a carbon phase, the phase V is a composite carbide phase which is represented by a formula WMC.

Member for plasma processing apparatus, plasma processing apparatus with the same and method for using sintered body

A substrate liquid treatment apparatus includes an inner tank configured to store a treatment liquid and having an upper opening, an outer tank disposed outside the inner tank, and a lid movable between a close position for closing the upper opening of the inner tank and an open position for opening the upper opening of the inner tank. The lid includes a main portion that covers the upper opening of the inner tank when the lid is positioned at the close position, and a splash shielding portion connected to the main portion. When the lid is positioned at the close position, the splash shielding portion extends from a position higher than an upper end of a side wall of the inner tank adjacent to the splash shielding portion to a position which is lower than the upper end of the side wall and which is on the outer tank side of the side wall.

Substrate liquid treatment apparatus

Growing community of inventors

Fukuoka, Japan

Takashi Ikeda