Hitachi, Ltd.

Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Renesas Technology Corp.

Takashi Hiroi

Maki Tanaka

Masahiro Watanabe

Mari Nozoe

Hiroyuki Shinada

Yasutsugu Usami

Asahiro Kuni

Chie Shishido

Aritoshi Sugimoto

Yasuhiko Nara

Shunji Maeda

Atsuko Takafuji

Yuji Takagi

Hitoshi Kubota

Hiroshi Miyai

Hiroshi Morioka

Haruo Yoda

Kazuhisa Machida

Takanori Ninomiya

Taku Ninomiya

Yukio Matsuyama

Kazushi Yoshimura

Yutaka Kaneko

Yusuke Yajima

Katsuhiro Kuroda

Katsuya Sugiyama

Kimiaki Ando

Hiroshi Tooyama

Tadao Ino

Toshifumi Honda

Hideaki Doi

Kohichi Hayakawa

Maki Ito

Yasuhiro Gunji

Naoki Hosoya

Hiroshi Makihira

Hirohito Okuda

Takahiro Urano

Nobuaki Hirose

Shigeya Tanaka

Masaaki Nojiri

Mitsunobu Isobe

Michio Nakano

Hiroyuki Shinoda

Takeyuki Yoshida

Atsushi Miyamoto

Hiroshi Makino

Takuma Yamamoto

Yasuo Nakagawa

Tsuyoshi Minakawa

Fumihiko Fukunaga

Dai Fujii

Atsushi Ichige

Kouichi Hayakawa

Shuji Maeda

Shinya Murakami

Takako Fujisawa

Yoshiyuki Momiyama

Kazuya Hayashi

Ichiro Kawashima

Minori Noguchi

Yasutaka Toyoda

Kazuo Aoki

Ryo Nakagaki

Hiroyuki Shindo

Kenji Watanabe

Yuko Sasaki

Yusuke Ominami

Masaki Hasegawa

Kenji Tanimoto

Shinichi Shinoda

Toshimitsu Hamada

Junzou Azuma

Satoru Fushimi

Koichi Hayakawa

Munenori Fukunishi

Fumiaki Endo

Kohichi Karasaki

The objective of the present invention is provide a defect inspection apparatus that increases defect position precision and can easily align a coordinate origin offset between a reviewing apparatus and the defect inspection apparatus, even when design data cannot be obtained or it is difficult to sufficiently use the design data. The defect inspection apparatus according to the present invention acquires a wafer swath image necessary for inspection, and uses the swath image to detect defects and calculate a positional deviation amount. During the calculation of the positional deviation amount, a template pattern is acquired from one arbitrary swath image via an image processing unit, and the template pattern and a plurality of swath images of the entire wafer are compared, whereby the positional deviation amount for a position corresponding to the template pattern on the wafer is calculated. For positions at which the template pattern is not present, an interpolated positional deviation amount is calculated by executing an interpolation operation by using the calculated positional deviation amount. A defect position is corrected on the basis of the positional deviation amount and the interpolated positional deviation amount, or by using a positional deviation map in which these positional deviation amounts have been mapped on the entire wafer.

Defect inspection apparatus and defect inspection program

The purpose of the present invention is to provide a defect inspection device with which it is possible to determine a defect candidate position more accurately than before, even when design data cannot be obtained or are difficult to be utilized sufficiently. The present invention solves the problem by: setting an appropriate reference die or reference chip over a wafer to be inspected; setting, with respect to each of swath channel die images obtained by dividing a reference die swath image into a plurality of portions and detecting the portions, one or more reference patterns; correcting a position error of a swath image obtained from another die to be inspected, using the reference pattern for each swath channel image; and performing defect detection using the corrected swath channel image.

Defect inspection method and defect inspection device

The purpose of this invention is to make it possible to efficiently and accurately detect a reticle defect at an earlier stage in a manufacturing process. The inspection device according to this invention uses the results of comparing die images of wafers that have had patterns transferred thereto using the same reticle after subjecting the die images to averaging processing and the results of comparing the die images without subjecting the same to averaging processing to distinguish a random defect signal caused by a huge defect, or the like, and having an extremely high brightness from a repeated defect signal, and only extracts repeated defects with higher accuracy.

Defect inspection device and defect inspection method

An inspection information generation device includes a design information acquirer configured to acquire design information of a sample to be inspected, a candidate region extractor configured to use the design information to extract multiple candidate regions, an image capturer configured to capture images of the multiple candidate regions, a similarity calculator configured to use the images of the multiple candidate regions to calculate a similarity or distance between the multiple candidate regions, and a region determiner configured to use the similarity or the distance to determine, as inspection information, at least one reference region corresponding to a region to be inspected.

Inspection information generation device, inspection information generation method, and defect inspection device

Provided is a pattern inspecting and measuring device that decreases the influence of noise and the like and increases the reliability of an inspection or measurement result during inspection or measurement using the position of an edge extracted from image data obtained by imaging a pattern as the object of inspection or measurement. For this purpose, in the pattern inspecting and measuring device in which inspection or measurement of an inspection or measurement object pattern is performed using the position of the edge extracted, with the use of an edge extraction parameter, from the image data obtained by imaging the inspection or measurement object pattern, the edge extraction parameter is generated using a reference pattern having a shape as an inspection or measurement reference and the image data.

Pattern inspecting and measuring device and program

Provided is a pattern inspection device for accurately simulating an electron beam image of a circuit pattern on a wafer from design data, and implementing high-precision defect detection based on the comparison between the simulated electron beam image and a real image. A pattern inspection device comprises: an image capturing unit for capturing an electron beam image of a pattern formed on a substrate; a simulated electron beam image generation unit for generating a simulated electron beam image using a parameter indicating the characteristics of the electron beam image on the basis of design data; and an inspection unit for comparing the electron beam image of the pattern, which is the image captured by the image capturing unit, and the simulated electron beam image generated by the simulated electron beam image generation unit, and inspecting the pattern on the substrate.

Pattern inspection device and pattern inspection method

A defect inspection method comprising: picking up an image of a subject under inspection to thereby acquire an inspection image; extracting multiple templates corresponding to multiple regions, respectively from design data of the subject under inspection; finding a first misregistration amount between the inspection image and the design data using a first template as any one template selected from among the plural templates; finding a second misregistration amount between the inspection image and the design data using a second template other than the first template, the second template being selected from among the plural templates, and the first misregistration-amount; and converting the design data, misregistration thereof being corrected using the first misregistration-amount, and the second misregistration-amount, into a design data image, and comparing the design data image with the inspection image to thereby detect a defect of the subject under inspection.

Defect inspection method and defect inspection apparatus

A conventional pattern inspection, which compares an image to be inspected with a reference image and subjects the resulting difference value to the defect detection using the threshold of defect determination, has difficulty in highly-sensitive inspection. Because defects occur only in specific circuit pattern sections, false reports occur in the conventional pattern inspections which are not based on the position. Disclosed are a defect inspection method and a device thereof which perform a pattern inspection by acquiring a GP image in advance, designating a place to be inspected and a threshold map to the GP image on the GUI, setting the identification reference of the defects, next acquiring the image to be inspected, applying the identification reference to the image to be inspected, and identifying the defects with the identification reference, thereby enabling the highly-sensitive inspection.

Defect inspection method, and device thereof

Provided is a circuit-pattern inspection device which enables efficient inspection of a semiconductor wafer by selectively inspecting areas on the semiconductor wafer, such as boundaries between patterns thereon, where defects are likely to occur during the step of producing the semiconductor wafer while changing the beam scanning direction for each area. Two-dimensional beam-deflection control is employed for inspection operations in a continuous-stage-movement-type circuit-pattern inspection device in which only one-dimensional scanning has been employed conventionally. That is, by employing a combination of an electron-beam-deflection control in a first direction parallel to the stage-movement direction and an electron-beam-deflection control in a second direction intersecting the stage-movement direction, it is possible to obtain an image of any desired area for inspection that is set within a swath. The amplitude of deflection signals for the electron-beam-deflection and the rise and fall timings of the signals are suitably controlled according to inspection conditions.

Circuit-pattern inspection device

Provided is an examination technique to detect defects with high sensitivity at an outer-most repetitive portion of a memory mat of a semiconductor device and even in a peripheral circuit having no repetitiveness. A circuit pattern inspection apparatus comprises an image detection unit for acquiring an image of a circuit pattern composed of multiple die having a repetitive pattern, a defect judgment unit which composes, in respect of an acquired detected image, reference images by switching addition objectives depending on regions of repetitive pattern and the other regions and compares a composed reference image with the detected image to detect a defect, and a display unit for displaying the image of the detected defect.

Circuit pattern examining apparatus and circuit pattern examining method

There is provided a substrate inspection device which uses a charged particle beam and is capable of more quickly extracting a defect candidate than ever before. The configuration of the substrate inspection device is such that a substrate having a circuit pattern is irradiated with a primary charged particle beam, the substrate is moved at a constant speed or at an increasing or a decreasing speed, a position resulting from the movement is monitored, the position of irradiation with the primary charged particle beam is controlled according to the coordinates of the substrate, an image in a partial region on the substrate is captured at a speed lower than the velocity of the movement, a defect candidate is detected based on the captured image, and the detected defect candidate is displayed in a map format.

Charged particle beam device for scanning a sample using a charged particle beam to inspect the sample

An electron beam apparatus equipped with a height detection system includes an electron beam unit emitting an electron beam to the specimen, and a height detection system for detecting height of the specimen which is set on a table. The height detection system includes an illumination system configured to direct first and second beams of light through a mask with a multi-slit pattern to a surface of the specimen at substantially opposite azimuth angles and at substantially equal angles of incidence, first and second detectors which respectively detect first and second multi-slit images of the first and second beams reflected from the specimen and generate output signals thereof, and a device which receives the output signals and generates a comparison signal which is responsive to the height of the specimen. An objective lens of the electron beam unit is controlled in accordance with the comparison signal.

Electron beam exposure or system inspection or measurement apparatus and its method and height detection apparatus

A circuit-pattern inspection apparatus and related method provide a highly sensitive defect inspection of an area including the most circumferential portion of a memory mat of a semiconductor chip formed on a semiconductor wafer. In certain examples, an image of a circuit pattern of a die formed on the semiconductor wafer is acquired to judge whether or not the circuit pattern contains a defect.

Inspection apparatus and an inspection method for inspecting a circuit pattern

The present invention relates to a defect inspection apparatus for inspecting defects in patterns formed on a semiconductor device, on the GUI of which for the confirmation of the inspection results an area is provided for displaying any one of or facing each other the features amount of defects, and the image during inspection or the reacquired image, and on the GUI of which a means is provided for setting the classification class and importance of the defects, and based on the classification class and the importance of the defects information set by this setting means, the classification conditions or the defect judging conditions are automatically or manually set so that the inspection conditions may be set easily.

Method and apparatus for inspecting defects of circuit patterns

An apparatus for processing a defect candidate image, including: a scanning electron microscope for taking an enlarged image of a specimen by irradiating and scanning a converged electron beam onto the specimen and detecting charged particles emanated from the specimen by the irradiation; an image processor for processing the image taken by the scanning electron microscope to detect defect candidates on the specimen and classify the detected defect candidates into one of plural classes; a memory for storing output from the image processor including images of the detected defect candidates; and a display unit which displays information stored in the memory and an indicator, wherein the display unit displays a distribution of the detected and classified defect candidates in a map format by distinguishing by the classified class, and the display unit also displays an image of a defect candidate stored in the memory together with the map which is indicated on the map by the indicator.

Pattern inspection method and apparatus

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Yokohama, Japan

Takashi Hiroi