Texas Instruments Corporation

Hitachi, Ltd.

Takashi Hayakawa

Hideo Aoki

Yoshitaka Tadaki

Toshihiro Sekiguchi

Jun Murata

Keizo Kawakita

Toshiyuki Kaeriyama

Michio Tanaka

Songsu Cho

Katsuo Yuhara

Michio Nishimura

Kazuhiko Saitoh

Yuji Ezaki

Minoru Ohtsuka

Takafumi Tokunaga

Kiyomi Katsuyama

Toshikazu Kumai

Akihiko Konno

Masayuki Yasuda

Katsutoshi Matsunaga

Yoshimi Torii

A semiconductor device, such as a dynamic RAM, and method of making it. A number of stacked cell capacitors are placed at a prescribed spacing in an alignment direction on top of a p.sup.- -type silicon substrate (1). Each capacitor has a nearly perpendicular cylindrical lower electrode (cylindrical polysilicon layer (96)), a dielectric film (silicon nitride film (77)), and upper electrode (plate electrode (78) made of polysilicon). The spacing in the alignment direction is smaller than the inner diameter of the lower electrode.

Method of forming a semiconductor device have a screen stacked cell

The etch-back amount of a silicon oxide film of a memory array which is a higher altitude portion is increased when etching back and flattening the silicon oxide film by arranging a first-layer wiring on a BPSG film covering an upper electrode of an information-storing capacitative element only in a peripheral circuit but not arranging it in the memory array. Thus, a DRAM having a stacked capacitor structure is obtained such that the level difference between the memory array and peripheral circuit is decreased, and the formation of wiring and connection holes are easy.

Method for forming semiconductor integrated circuit device having a

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Fussa, Japan

Takashi Hayakawa