Fussa, Japan

Takashi Hayakawa


Average Co-Inventor Count = 17.2

ph-index = 2

Forward Citations = 30(Granted Patents)


Company Filing History:


Years Active: 1998-1999

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Takashi Hayakawa: Innovator in Semiconductor Technology

Introduction

Takashi Hayakawa is a prominent inventor based in Fussa, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of dynamic RAM devices. With a total of 2 patents, his work has had a lasting impact on the industry.

Latest Patents

Hayakawa's latest patents include a method of forming a semiconductor device that features a screen stacked cell. This innovation involves a semiconductor device, such as a dynamic RAM, and outlines a method for its production. The design incorporates a number of stacked cell capacitors placed at a prescribed spacing on top of a p.sup.- -type silicon substrate. Each capacitor consists of a nearly perpendicular cylindrical lower electrode, a dielectric film, and an upper electrode made of polysilicon. Another notable patent details a method for forming a semiconductor integrated circuit device, which enhances the etch-back amount of a silicon oxide film in a memory array, facilitating easier wiring and connection hole formation.

Career Highlights

Throughout his career, Hayakawa has worked with leading companies in the technology sector, including Texas Instruments Corporation and Hitachi, Ltd. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Hayakawa has collaborated with notable colleagues such as Hideo Aoki and Jun Murata. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Takashi Hayakawa's contributions to semiconductor technology exemplify his dedication to innovation. His patents and career achievements highlight his role as a key figure in advancing the capabilities of dynamic RAM devices.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…