Hitachi, Ltd.

Nippon Telegraph and Telephone Corporation

Renesas Technology Corp.

Panasonic Liquid Crystal Display Co., Ltd.

Hitachi Displays, Ltd.

Hitachi High-tech Corporation

Japan Display Inc.

Mitsubishi Electric Corporation

Hitachi Chemical Company, Ltd.

Ntt Advanced Technology Corporation

Mitsubishi Heavy Industries Automotive Thermal Systems Co., Ltd.

Masayoshi Ltd.

Takashi Hattori

Hiroshi Shiraishi

Mutsuko Hatano

Sanae Fujita

Toshihiko Tanaka

Tessei Kobayashi

Yuko Tsuchiya

Naoya Okada

Takahide Kuranaga

Hiroto Otake

Masaki Yamada

Keiji Watanabe

Hiroshi Fukuda

Hidetoshi Satoh

Mieko Matsumura

Tadashi Arai

Yasuko Gotoh

Kazuo Aoyama

Toshio Sakamizu

Yoshiyuki Yokoyama

Hiroyuki Kobayashi

Makoto Hattori

Masaharu Kubo

Daisuke Sonoda

Shinya Yamaguchi

Yasushi Goto

Yasushi Kurata

Masato Yoshida

Heewon Jeong

Ryuta Tsuchiya

Daisuke Ryuzaki

Hiroyuki Kamitani

Masahiko Asai

Kazuki Niwa

Hirotaka Hamamura

Kyoko Kojima

Takeshi Nojiri

Masatoshi Morishita

Kiyoko Yamanaka

Tooru Tanaka

Shuichiro Adachi

Yu Zhao

Yoshinari Shirai

Yoshitaka Ono

Yasuyuki Miyazaki

Akihiro Orita

Hifumi Ohishi

Hisanori Tani

Akinori Yamamoto

Kazuyoshi Torii

Keisuke Akinaga

Sonoko Migitaka

Tsuyoshi Hayasaka

Michael Walker

Rie Tokuyama

Haruka Arao

Midori Kato

Catherine King

Changfang Zhou

Takeshi Satou

Takahiro Odaka

Yusuke Tsujikawa

Shuichi Miyazaki

A method for etching a silicon oxide film at a high selection ratio with respect to a silicon nitride film while a high etching rate of the silicon oxide film is balanced with a low etching rate of the silicon nitride film. The etching processing method is a dry etching processing method for etching a film without using plasma by supplying gas into a process chamber, the film having a side wall of a groove or a hole constituted by respective end parts of laminated film layers formed on a wafer, the laminated film layers including silicon oxide films each sandwiched between silicon nitride films, and in which the silicon oxide films are etched laterally from the end parts with the wafer being set to a low temperature equal to or less than (0.040x−42.0° C.) when a partial pressure of hydrogen fluoride gas is taken as x (Pa).

Etching processing method

Provided is an invention for efficiently searching for books used in training to reduce metathesis. A book search database storage unitstores a book search database in which information identifying a book, information regarding a frequency of a proximity number for a mora character notation pair appearing in forward order in the book, and information regarding a frequency of a proximity number for the mora character notation pair appearing in reverse order are associated with each other. A display unitdisplays a book search screen including a correctly pronounced phrase input region and an incorrectly pronounced phrase input region. A subject pronunciation designation unitdetermines two mora character notations and a proximity number to use as search conditions based on an input of the correctly pronounced phrase input region and an input of the incorrectly pronounced phrase input region. A subject book information generation unitgenerates search results including information regarding books matching the search conditions from the book search database.

Book search apparatus, book search database generation apparatus, book search method, book search database generation method, and program

Provided is an etching method for etching a silicon oxide film with a high accuracy at a high selection ratio with respect to a silicon nitride film, the etching method of etching a film structure, in which an end portion of a film layer in which the silicon oxide film and the silicon nitride film formed in advance on a wafer disposed in a processing chamber are alternately stacked in a vertical direction forms a side wall of a groove or a hole, by supplying processing gas into the processing chamber includes a step of supplying hydrogen fluoride and alcohol vapor into the processing chamber, maintaining the wafer at a temperature of −20° C. or lower, preferably −20° C. to −60° C., and etching the silicon oxide film from the end portion in a lateral direction.

Etching method

A scenario execution system includes a scenario execution terminal, a log management device, and a storage device. The scenario execution terminal includes a scenario execution unit and an event notification unit. The scenario execution unit executes a scenario file having a scenario indicating a procedure of operations in the scenario execution terminal described therein. The event notification unit notifies the log management device of information on an event generated by the scenario execution unit executing the scenario file. The log management device includes a log recording unit that receives the information on the event from the scenario execution terminal and records log data having the received information on the event set therein on the storage device. The storage device adds, to the log data, information uniquely generated on the basis of log data recorded before such log data and stores resultant log data.

Scenario execution system, log management device, log recording method, and program

A clustering device includes a storage means configured to store a transposed file including array elements in a storage unit, the array elements storing a pair in which a cluster identifier and a first non-zero feature quantity of a mean feature vector are associated with each feature identifier, a calculation means configured to calculate a distance between the object feature vector in sparse representation indicating the object feature vector in a pair in which a second non-zero feature quantity of the object feature vector and a feature identifier of the second non-zero feature quantity are associated with each other, and the mean feature vector of each cluster, and an assignment means configured to assign the object feature vector to one of the plurality of clusters on the basis of the distance, and the calculation means calculates a product of a second non-zero feature quantity and a first non-zero feature quantity stored in an array element of an index based on a feature identifier corresponding to the second non-zero feature quantity among array elements constituting the transposed file, to calculate an inner product necessary for the calculation of the distance.

Clustering apparatus, clustering method, program and data structure

Provided is a learning assistance technology that uses a learning history to check the level of comprehension by a learner in relation to a learning target. Included are a score calculation unit that uses a first occurrence ratio α(n) of a learning target Q(n) calculated using an occurrence frequency R(n) of the learning target Q(n) in a document to be used as a basis for creating a confirmation question and a second occurrence ratio β(n) of the learning target Q(n) weighted by viewing time and calculated using the occurrence frequency R(n) of the learning target Q(n) and a viewing time for each page of the document included in a learning history to calculate one of the difference between the first occurrence ratio α(n) and the second occurrence ratio β(n), the absolute value of the difference, or the ratio as a score S(n) of the learning target Q(n), and a query generation unit that treats the learning target Q(n) corresponding to the n for which the score S(n) is maximized as a query, that is, the learning target with which to create a confirmation question for a learner.

Learning support apparatus, learning support method, and program

To provide an etching processing method and an etching processing apparatus which allow an aluminum oxide film to be etched with high accuracy and with a high selectivity to each of a silicon oxide film and a silicon nitride film, the etching processing method includes the step of placing, in a processing chamber, a wafer having the aluminum oxide film disposed on an upper surface thereof, maintaining the wafer at a temperature of −20° C. or less, and supplying vapor of hydrogen fluoride from a plurality of through holes in a plate-like member disposed above the upper surface of the wafer with a predetermined gap being provided therebetween only for a predetermined period to etch the aluminum oxide film.

Etching processing method and etching processing apparatus

An air-conditioning control system includes a first inverter that drives a first driving target in accordance with commands received via a first communication network, a second inverter that drives a second driving target in accordance with commands received via the first communication network, a first controller that is capable of controlling the first inverter and the second inverter by transmitting commands via the first communication network, and a second controller that is capable of controlling the first inverter and the second inverter by transmitting commands via the first communication network. Each of the first controller and the second controller is capable of transmitting, to the first inverter and the second inverter via the first communication network, an invalidation command for invalidating the commands therefrom.

Air-conditioning control system for railroad vehicle

Provided is a technique for effectively searching for a book for an articulation disordered-child to use in practice. A search condition setting unitsets a search condition for a speech sound in accordance with a selection state of kana symbol buttons disposed in a book search screen, the kana symbol buttons corresponding one-to-one to kana symbols indicating respective speech sounds. A search unitsearches for a book in which a desired speech sound appears, in accordance with the search condition. A book search screen includes at least one of a Japanese syllabary button group in which the kana symbol buttons are classified as vowels or consonants, and an articulation button group in which the kana symbol buttons are classified by articulatory organ and articulation manner.

Book search interface apparatus, book search method, and program

A graph updating device includes: a K neighbor vertex search unit that searches for a K neighbor vertex set of an added vertex in a neighbor graph on the basis of the neighbor graph and an object added to the neighbor graph as an added vertex and outputs the K neighbor vertex set; a vertex selection unit that selects a vertex candidate set on the basis of the neighbor graph, the added vertex, and the K neighbor vertex set of the added vertex and outputs the vertex candidate set, the vertex candidate set being a set of vertices that is present in the neighbor graph and possibly contains the added vertex in a K neighbor vertex set thereof; and a neighbor graph updating unit that reconstructs a K neighbor vertex set related to all vertices of the neighbor graph using K neighbor vertex sets of respective vertices of the vertex candidate set and adds the K neighbor vertex set of the added vertex to the reconstructed K neighbor vertex set to generate an updated neighbor graph.

Graph updating apparatus, graph updating method and program

A method of etching a silicon oxide film with high precision at high selectivity as compared with a silicon nitride film while establishing both of a higher etching rate of the silicon oxide film and a lower etching rate of the silicon nitride film is provided. An etching method according to the present invention is directed to a dry etching method for etching a film structure without using plasma in which an end of a film layer having a silicon oxide film vertically sandwiched between silicon nitride films and laminated and formed in advance on a wafer disposed in a processing chamber forms a side wall of a groove or a hole while a processing gas is supplied into the processing chamber, the method including the steps of: supplying a hydrogen fluoride gas; cooling the wafer to a low temperature of &#x2212;30&#xb0; C. or lower, preferably, to &#x2212;30 to &#x2212;60&#xb0; C.; and etching the silicon oxide film laterally from the end.

The present invention provides a method of producing a sialooligosaccharide, which comprises: (1) hydrolyzing a sialoglycoprotein by heating at a temperature from 70 to 90&#xb0; C. in an alkaline aqueous solution; and (2) purifying the hydrolysate to obtain the sialooligosaccharide, wherein a weight ratio of sialic acid to hexose contained in the resulting sialooligosaccharide is from 0.5 to 0.9.

Methods of producing sialooligosaccharides and uses thereof

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Musashimurayama, Japan

Takashi Hattori