Hitachi Cable, Inc.

Takashi Furuya

Taichiroo Konno

Masahiro Arai

Masatomo Shibata

Kazuyuki Iizuka

Toshihiro Morisawa

Takehiko Tani

Hisataka Nagai

In a manufacturing method of a semiconductor photonic device substrate, before multi-layer films different in material composition are successively and gradually crystal-grown in one chamber, an inter-layer growth rate model showing a relation in growth rate between each layer is defined, a growth rate of a film corresponding to at least one or more layers is obtained by actual crystal growth using an individual substrate, a growth rate of a film corresponding to other layers is estimated from the obtained growth rate by the inter-layer growth rate model, and a growth time is determined in accordance with a film thickness of each layer of the semiconductor photonic device substrate based on the actually obtained growth rate and the estimated growth rate. These steps are carried out by using a computer system connected to an MOCVD equipment, and then, a crystal growth of the semiconductor photonic device substrate is performed.

Manufacturing method of semiconductor photonic device substrate

A first conductivity type cladding layer, a first side multilayer, an active layer, a second side multilayer, and a second conductivity type cladding layerare provided in a semiconductor light emitting device. The first side multilayeris provided between the first conductivity type cladding layerand the active layer, and the second side multilayeris provided between the active layerand the second conductivity type cladding layer. Each of the multilayeris transparent with respect to the light generated at the active layer, having a bandgap larger than that of the active layer, and lattice-matched with the active layer

Semiconductor light emitting device

A semiconductor light emitting element has a first conductive-type cladding layer, an undoped active layer, a second conductive-type cladding layer, and a second conductive-type current spreading layer that are formed on a first conductive-type semiconductor substrate. The second conductive-type cladding layer has a first dopant suppressing layer formed at a portion in the second conductive-type cladding layer, the portion being not in contact with the active layer. The first dopant suppressing layer has a dopant concentration lower than a region in the vicinity of the first dopant suppressing layer.

Semiconductor light emitting element

A Group III metal element is heated so as to melt, a gas NH,containing nitrogen atoms is injected into a melt 3 of the Group III metal element at a temperature lower than the melting point of a nitride to be obtained, thereby producing a nitride microcrystal of the Group III element having high wettability with the melt 3 in the melt 3 of the Group III metal element. A mixture of the Group III nitride microcrystal obtained as mentioned above and the Group III metal element solution is used as a starting material of a liquid phase growth or Group III nitride powders obtained by removing the Group III metal material from the mixture are used as a starting material of a vapor phase growth. Further, a seed crystal or a substrate crystal is immersed in a melt of a Group III element such as gallium, bubbles of a gas containing nitrogen such as ammonia are intermittently come into contact with the surface of the crystal, and the Group III element and the gas containing nitrogen are allowed to react with each other on the surface of the seed crystal or the substrate crystal, thereby allowing the nitride crystal of the Group III element to be grown on the surface of the seed crystal or substrate crystal.

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Hitachi, Japan

Takashi Furuya