Tokyo Electron Limited

Tokyo Electron Limi Ted

Takao Funakubo

Ryuichi Asako

Shinichi Kozuka

Masahiro Tabata

Hiroshi Tsujimoto

Kumiko Ono

Wataru Ozawa

Hirofumi Haga

Akihiro Sakamoto

Naoki Taniguchi

Masaru Nishino

Tsutomu Ito

Ryosuke Niitsuma

Yuta Seya

Aritoshi Mitani

A plasma processing method is performed in a state where a focus ring is disposed on a supporting table to surround an edge of a substrate by a plasma processing apparatus. The plasma processing apparatus includes a chamber and the supporting table provided in the chamber and configured to support the substrate mounted thereon. The plasma processing method includes forming an organic film on the focus ring to reduce a difference between a position of an upper surface of the focus ring in a vertical direction and a reference position, and performing plasma processing on the substrate after the formation of the organic film.

Plasma processing method

There is provided a method for etching an organic region of a substrate. In the method, an organic film is formed on a surface in a chamber of a plasma processing apparatus. The surface extends out around a region where the substrate is to be disposed in the chamber of the plasma processing apparatus, and the organic region is etched by chemical species from plasma in the chamber.

Method for etching organic region

A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.

Plasma processing apparatus and plasma processing method

There is disclosed a method for cleaning a component of a plasma processing apparatus which is disposed in an inner space defined by a processing chamber of the plasma processing apparatus. The cleaning method comprises: forming a film on the surface of the component, wherein a compound forming the film is generated by polymerization of a first compound contained in a first gas and a second compound contained in a second gas, the first compound being isocyanate and the second compound being amine or a compound having a hydroxyl group; transferring the component from the processing chamber to a heating chamber after substrate treatment is performed in the inner space; and heating the component so that depolymerization of the compound forming the film occurs.

Method for cleaning components of plasma processing apparatus

There is disclosed a method for cleaning a component of a plasma processing apparatus, a surface of the component being included in a surface that defines an inner space formed in a chamber of the plasma processing apparatus. The cleaning method comprises: forming a film on the surface of the component by supplying a first gas and a second gas into the inner space, wherein a compound forming the film is generated by polymerization of a first compound contained in the first gas and a second compound contained in the second gas, the first compound being isocyanate and the second compound being amine or a compound having a hydroxyl group; and removing, after substrate treatment is performed in the inner space, a deposit formed on the film during the substrate treatment by heating the component so that depolymerization of the compound forming the film occurs.

A plasma etching method is provided to perform a desired etching by switching a process condition while maintaining plasma by supplying high frequency power. A first plasma etching process is performed based on a first process condition. A second plasma etching process different from the first process conditions is performed based on a second process condition while supplying first high frequency power having first effective power. Second high frequency power having second effective power is intermittently supplied between the first plasma etching process and the second plasma etching process during a switch from the first plasma etching process to the second plasma etching process. The second effective power of the second high frequency power is equal to or lower than the first effective power of the first high frequency power in the second plasma etching process.

Plasma etching method

A metal-containing deposit can be efficiently removed. A plasma processing method includes removing a deposit, which adheres to a member within a processing vessel and contains at least one of a transition metal and a base metal, by plasma of a processing gas containing a CxFy gas, in which x is an integer equal to or less than 2 and y is an integer equal to or less than 6, and without containing a chlorine-based gas and a nitrogen-based gas.

Growing community of inventors

Miyagi, Japan

Takao Funakubo