Shin-etsu Handotai Co., Ltd.

Other

Shin-etsu Chemical Co., Ltd.

Shin-etsu Handotai Kabushiki Kaisha

Takao Abe

Norihiro Kobayashi

Masatake Katayama

Yasuaki Nakazato

Shoji Akiyama

Masatake Nakano

Yutaka Ohta

Atsuo Uchiyama

Tetsuya Igarashi

Masatoshi Takahashi

Takenori Watabe

Izumi Fusegawa

Hiroyuki Ohtsuka

Hirotoshi Yamagishi

Satoyuki Ojima

Tokio Takei

Masanori Kimura

Hiroji Aga

Tsuyoshi Ohtsuki

Susumu Nakamura

Masami Nakano

Satoshi Oka

Susumu Kuwabara

Ken Aihara

Masahiro Kato

Yoshinori Hayamizu

Kouji Mizuishi

Katsushi Tokunaga

Naoki Ishikawa

Keiichi Okabe

Junichi Murota

Konomu Ohki

Toru Yamada

Teruhiko Hirasawa

Takashi Matsuura

Kouzou Yokota

Weifeng Qu

Akio Kanai

Ichiro Yonenaga

Shuuji Yokota

Yatsuo Ito

Hiroko Ota

Shyouzo Muraoka

Konomu Oki

Masafumi Yamaguchi

Hajime Miyajima

Shigeru Saito

Weifung Qu

The present invention is a silicon single crystal substrate for a solid-state image sensor obtained by slicing a silicon single crystal fabricated by a CZ method, where the silicon single crystal substrate is a p-type silicon single crystal substrate whose main dopant is Ga, and the silicon single crystal substrate has a B concentration of 5&#xd7;10atoms/cmor less. This provides a silicon single crystal substrate and a silicon epitaxial wafer for a solid-state image sensor that can suppress the residual image characteristics of a solid-state image sensor.

Silicon single crystal substrate and silicon epitaxial wafer for solid-state image sensor and solid-state image sensor

The present invention is a single-crystal manufacturing apparatus based on the Czochralski method having a main chamber configured to accommodate hot zone components including a crucible, and a pull chamber configured to accommodate and take out a single crystal pulled from a raw material melt, the apparatus further comprising a multipurpose chamber interchangeable with the pull chamber, wherein a heating means for heating a raw material charged into the crucible and a cooling means for cooling the hot zone components after pulling the single crystal are placeable in the multipurpose chamber respectively. As a result, there is provided a single-crystal manufacturing apparatus that enables, in manufacture of a single crystal of a large diameter, e.g., approximately 200 mm or more, an operating rate of the single-crystal manufacturing apparatus and productivity of the single crystal to be improved.

Single-crystal manufacturing apparatus

According to the present invention, there is provided a single-crystal manufacturing apparatus based on Czochralski method, comprising at least: a main chamber configured to accommodate hot zone components including a crucible; and a pull chamber configured to accommodate and take out a single crystal pulled from a raw material melt contained in the crucible, wherein the apparatus further comprises: a cooling pipe which is arranged above the crucible and in which a cooling medium is circulated; and a moving mechanism that moves up and down the cooling pipe, and the hot zone components are cooled down by utilizing the moving mechanism to move down the cooling pipe toward the crucible after growth of the single crystal, and a method for manufacturing a single crystal is also provided. As a result, there can be provided the single crystal manufacturing apparatus and the method for manufacturing a single crystal that enable cooling the hot zone components in the main chamber in a short time after pulling a single crystal having a large diameter, e.g., approximately 200 mm or above.

Single-crystal manufacturing apparatus and method for manufacturing single crystal

A single-crystal manufacturing apparatus comprises a chamber, a crucible in the chamber, a heater arranged around the crucible, a lifting mechanism for lifting a seed crystal, and a guide passage for the seed crystal and a grown single crystal. In the single-crystal manufacturing apparatus, a material polycrystal contained the crucible is melted by a heater, and the seed crystal is made to contact the molten polycrystal and is lifted. The single-crystal manufacturing apparatus comprises a cylindrical quartz tube having a curved bottom portion, and a dome-shaped quartz plate. The curved bottom portion faces the crucible from the upper portion of the chamber through the guide passage. The quartz plate is arranged to enclose the quartz tube. The quartz tube has a reflecting structure for reflecting a heat ray from at least its bottom portion whereas the quartz plate has a reflecting structure for reflecting the heat ray to the crucible.

Apparatus and method for producing single crystal

A photovoltaic power generation module that can make use of arcuate cells and a photovoltaic power generation system employing such a module are disclosed. The photovoltaic power generation module may include arcuate cells divided from a disk-shaped single crystal silicon photovoltaic power generation cell. The arcuate cells may have a circular arc with a central angle of 90&#xb0;. The arcuate cells may have a grid-perpendicular to the chord and at least one busbar perpendicular to the grid. The arcuate cells may be arrayed in a lattice pattern, the arcuate cells having an area of 28 to 65 cmand 14 to 42 thereof being arrayed.

Photovoltaic power generation module and photovoltaic power generation system employing same

A solar cellhas a number of groovesformed in parallel with each other on a first main surfaceof a silicon single crystal substrate. An electrodeis formed on the inner side face of each grooveon one side. Each grooveis formed in the direction in disagreement with the &#x3c;110&#x3e; direction on the first main surface. This raises mechanical strength of the solar cell. The direction of formation of the groovespreferably crosses the &#x3c;110&#x3e; direction nearest to the direction of formation at an angle of 4&#xb0;&#x2dc;45&#xb0; on the acute angle side.

Solar cell and method for producing the same

A solar cell modulehas a plurality of solar cellshaving a plurality of parallel grooveson the individual light-receiving surfaces thereof, each of the grooves having an electrodefor extracting output on the inner side face (electrode-forming inner side face) on one side in the width-wise direction thereof; and a supportfor supporting the solar cellsin an integrated manner so as to direct the light-receiving surfaces upward. The annual power output can be increased by adjusting the direction of arrangement of the electrode-forming inner side faces of the grooveswhile taking the angle of inclination &#x3b2; of the light-receiving surface of the individual as-installed solar cellsrelative to the horizontal plane and the latitude &#x3b4; of the installation site of the solar cell module into consideration.

Solar cell module and its installing module

The present invention provides a method and apparatus for growing a single crystal by the Czochralski method, wherein a single crystal is grown with forced cooling of neighborhood of a crystal growth interface by disposing a cooling cylinder formed of copper or a metal having a heat conductivity larger than that of copper at least in the vicinity of the crystal growth interface so as to surround the single crystal under pulling and circulating a cooling medium in the cooling cylinder. Thus, there are provided a method and apparatus for growing a single crystal, which can exert cooling effect on a growing single crystal to the maximum extent so as to realize higher crystal growth rate, even when a silicon single crystal having a diameter of 300 mm or more is grown.

Method and apparatus for growing single crystal

The present invention provides a method for producing a solar cell comprising forming the solar cell from a CZ silicon single crystal wafer, wherein a CZ silicon single crystal wafer having an initial interstitial oxygen concentration of 15 ppma or less is used as the CZ silicon single crystal wafer; a solar cell produced from a CZ silicon single crystal wafer, wherein the CZ silicon single crystal wafer has an interstitial oxygen concentration of 15 ppma or less; and a solar cell produced from a CZ silicon single crystal wafer, wherein the CZ silicon single crystal wafer has a BMD density of 5&times;10 /cm or less. Thus, there can be obtained a solar cell showing little fluctuation of characteristics.

Method for producing solar cell and solar cell

A heating apparatus comprises a container having a work housing space formed therein, and a heat source for heating a work W in the work housing space . The apparatus further comprises a heat ray reflecting member having a heat reflecting surface thereof composed of a heat ray reflecting material, so as to allow the heat ray generated in the work housing space to reflect on the heat reflecting surface to thereby change the direction thereof towards the works W. The heat reflecting material is provided for reflecting heat ray in a specific wavelength band, comprises a stack of a plurality of element reflecting layers comprising materials having transparent properties to the heat ray, in which in the element reflecting layers, two adjacent layers are composed of a combination of materials differed from each other in refractive indices to the heat ray, while keeping difference between the refractive indices of 1.1 or larger.

Heat reflecting material and heating device using the material

There can be provided according to the present invention a silicon single crystal produced according to Czochralski method to which Ga (gallium) is added as a dopant characterized in that a resistivity is 5&OHgr;.cm to 0.1&OHgr;.cm and a method for producing a silicon single crystal to which Ga (gallium) is added as a dopant according to Czochralski method characterized in that Ga is added in a silicon melt in a crucible, a seed crystal is brought into contact with the silicon melt and is pulled with rotating to grow a silicon single crystal ingot. Thereby, a silicon single crystal and silicon single crystal wafer and a method for producing them that can produce a solar cell characterized in that photo-degradation is not caused even in the single crystal having high oxygen concentration and a conversion efficiency of optical energy is very high.

Silicon single crystal and wafer doped with gallium and method for producing them

There is provided a novel bonded semiconductor wafer having a layered structure alternately stacked with semiconductor layers and insulator layers in two cycles or more and manufactured by means of a bonding process, wherein at least one of the insulator layers is formed with ion implanted oxygen, and a novel manufacturing process for a bonded semiconductor wafer in which an ion implantation separation process is adopted. The novel bonded semiconductor wafer is manufactured by means of a bonding process and has a layered structure alternately stacked with semiconductor layers and insulator layers in two cycles or more, wherein at least one of the insulator layers is formed with ion implanted oxygen.

Semiconductor wafer and method for producing the same

Production method for silicon wafer and SOI wafer, and SOI wafer

There is disclosed a heat treatment method for a silicon monocrystal wafer comprising the steps of heat-treating in a reducing atmosphere a silicon monocrystal wafer manufactured by growing a silicon monocrystal ingot by Czochralski method wherein a wafer obtained from a silicon monocrystal ingot having oxygen concentration of 16 ppma or less which is manufactured by pulling at a growth rate of 0.6 mm/min or more, and in which COPs exist in high density is subjected to anneal heat treatment at 1200&deg; C. or above for one second or more through use of a rapid heating/rapid cooling apparatus, or at 1200&deg; C. or above for 30 minutes or more through use of a batchwise heat treatment furnace, and no defect silicon monocrystal wafer obtained with the method. There can be manufactured a silicon monocrystal wafer in which crystal defects existing on the surface of the wafer or at the surface layer portion thereof are minimized, and there can be provided a silicon monocrystal wafer for a device which is excellent in electric characteristics such as oxide dielectric breakdown voltage and electrical reliability.

Heat treatment method for a silicon monocrystal wafer and a silicon monocrystal wafer

A silicon wafer is produced by growing a silicon single crystal ingot having a resistivity of 100 &OHgr;&middot;cm or more and an initial interstitial oxygen concentration of 10 to 25 ppma by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to an oxygen precipitation heat treatment so that a residual interstitial oxygen concentration in the wafer should become 8 ppma or less. A silicon wafer produced as described above shows little decrease in resistivity even after a heat treatment in device production etc. Further, if a silicon wafer is produced and heat-treated so that the wafer should have the above-defined initial interstitial oxygen concentration and residual interstitial oxygen concentration, slip dislocations in a subsequent heat treatment process are prevented irrespective of resistivity. Furthermore, by forming an epitaxial layer on a surface of a silicon wafer of the present invention, a high resistivity epitaxial wafer can be produced, which is free from slip dislocations etc. and can be used for various devices.

Production method for silicon wafer and silicon wafer

Growing community of inventors

Annaka, Japan

Takao Abe