Hitachi, Ltd.

Renesas Technology Corp.

Takanorr Aono

Ryuji Kohno

Yoshishige Endo

Masatoshi Kanamaru

Hideyuki Aoki

Naoto Ban

Toshio Miyatake

A semiconductor inspecting apparatus having a plurality of electrical connection boards arranged in the inspecting apparatus and a plurality of probes respectively provided on a plurality of beams formed on a first board of said plurality of electrical connection boards, the probes being adapted to be individually brought into contact with a plurality of electrode pads of a semiconductor device for inspection, so as to inspect the semiconductor device while establishing electrical connection therebetween. A one-end supported beam is used as each of the beams, and each of the probes is formed at a portion shifted in a rectangular direction to a center line of a longitudinal direction of the one-end supported beam.

Semiconductor-device inspecting apparatus and a method for manufacturing the same

A structure is provided such that a plural cantilevers are formed on a first board formed of silicon, probes are respectively formed on the individual cantilevers at positions each offset perpendicularly to a longitudinal center line of the cantilever, and wiring connected continuously from each probe to a secondary electrode pad portion through an insulating layer. A structure is alternatively adopted such that by using a both-ends supported beam formed of silicon as the beam, each probe is formed at a position offset toward a supported portion side of the both-ends supported beam.

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Chiyoda, Japan

Takanorr Aono