Denso Corporation

Takanori Teshima

Kuniaki Mamitsu

Naohiko Hirano

Yoshimi Nakase

Shoji Miura

Akihiro Niimi

Yutaka Fukuda

Yoshitsugu Sakamoto

Nobuyuki Kato

Yukinori Migitaka

Daisuke Fukuoka

Tetsuo Fujii

Norihito Tokura

Shigeki Takahashi

Tomoatsu Makino

Masayoshi Nishihata

Chikage Noritake

Yasushi Ookura

Akira Tai

Kazuo Akamatsu

Kazuhito Nomura

Shusaku Nakazawa

Kenji Yagi

Ken Sakamoto

A semiconductor device comprises at least a semiconductor module including a semiconductor chip, a heat sink thermally connected to the semiconductor chip and a seal member for covering and sealing the semiconductor chip and the heat sink in such a manner as to expose the heat radiation surface of the heat sink. The radiation surface is cooled by a refrigerant. An opening is formed in a part of the seal member as a refrigerant path through which the refrigerant flows.

Semiconductor device

A semiconductor device includes a plate-shaped semiconductor element and an electrically insulating resin member. The semiconductor element has a front-surface electrode on its front surface and a back-surface electrode on its back surface. The resin member encapsulates the semiconductor element. The front-surface electrode is exposed to a front side of an outer surface of the resin member. The back-surface electrode is exposed to a back side of the outer surface of the resin member. The resin member has an extension portion that covers the entire side surface of the semiconductor element and extends from the side surface of the semiconductor element in a direction parallel to the front surface of the semiconductor element.

Semiconductor device with surface electrodes

A semiconductor device includes a first protection film for covering a first metal wiring. A second protection film is disposed on the first protection film, which is covered with a solder layer. Even if a crack is generated in the second protection film before the solder layer is formed on the second protection film, the crack is restricted from proceeding into the first protection film.

Semiconductor device having semiconductor chip and metal plate

A semiconductor module and a method of manufacturing the same are disclosed including a semiconductor element having an electrode, a heat radiation plate placed in thermal contact with a main surface of the semiconductor element and electrically connected to the electrode thereof, an insulation body directly formed on an outside surface of the heat radiation plate, a metallic body directly formed on an outside surface of the insulation body and having a thickness lower than that of the insulation body, and a mold resin unitarily molding the heat radiation plate, the semiconductor element and the insulation body. The insulation body is covered with the metallic body and the mold resin and the metallic body has an outside surface exposed to an outside of the mold resin.

Semiconductor module molded by resin with heat radiation plate opened outside from mold

A method for manufacturing a mold type semiconductor device is provided. The device includes a semiconductor chip having a semiconductor part and a metallic member connecting to the chip via a conductive layer and a connecting member. The method includes: forming the semiconductor part on a semiconductor substrate so that a cell portion is provided; forming the conductive layer on the substrate; forming a first resist layer to cover a part of the conductive layer corresponding to the cell portion; etching the conductive layer with the first resist layer as a mask so that a first conductive layer is provided; removing the first resist layer and forming a second conductive layer to cover a surface and an edge of the first conductive layer. The second conductive layer has a Young's modulus equal to or larger than the semiconductor substrate.

Method for manufacturing mold type semiconductor device

A mold type semiconductor device includes a semiconductor chip including a semiconductor part; a metallic layer; a solder layer; and a metallic member connecting to the semiconductor chip through the metallic layer and the solder layer. The solder layer is made of solder having yield stress smaller than that of the metallic layer. Even when the semiconductor chip is sealed with a resin mold, the metallic layer is prevented from cracking.

Mold type semiconductor device

A semiconductor device includes a semiconductor chip that generates heat in operation, a pair of heat sinks for cooling the chip, and a mold resin, in which the chip and the heat sinks are embedded. The thickness tof the chip and the thickness tof one of heat sinks that is joined to the chip using a solder satisfy the equation of t/t&#x2267;5. Furthermore, the thermal expansion coefficient &#x3b1;of the heat sinks and the thermal expansion coefficient &#x3b1;of the mold resin satisfy the equation of 0.5&#x2266;&#x3b1;&#x2266;1.5. In addition, the surface of the chip that faces the solder has a roughness Ra that satisfies the equation of Ra&#x2266;500 nm. Moreover, the solder is a Sn-based solder to suppress relaxation of a compressive stress in the chip, which is caused by the creeping of the solder.

Transfer-molded power device and method for manufacturing transfer-molded power device

A semiconductor device includes a heater element; a first heat sink disposed on one side of the heater element; a second heat sink disposed on the other side of the heater element; and a resin mold for molding the heater element and the first and second heat sinks. The first heat sink includes a first heat radiation surface, which is disposed opposite to the heater element and exposed from the resin mold. The second heat sink includes a second heat radiation surface, which is disposed opposite to the heater element and exposed from the resin mold. The first and second heat radiation surfaces have a degree of parallelism therebetween equal to or smaller than 0.2 mm.

Semiconductor device having a pair of heat sinks and method for manufacturing the same

A semiconductor module includes a fixed type and transformable type coolers and a flat semiconductor package sandwiched between the coolers. A relative positional relationship of the semiconductor package is fixed with the fixed type cooler, but variable with the transformable type cooler. The transformable type cooler includes a transformable member of a metal thin plate covering a coolant chamber. The semiconductor module includes a sandwiching mechanism causing the fixed type cooler to be pressed toward the transformable type cooler. Fastening adjustment screws of the sandwiching mechanism causes a pressing frame to approach a cooler body of the transformable type cooler. Therefore, the semiconductor package is pressed via the fixed type cooler while the transformable member is slightly transformed. This enhances a degree of contact between the semiconductor package and transformable member via an insulating member.

Double-sided cooling type semiconductor module

A package type semiconductor device comprising: a semiconductor chip having a semiconductor part; a main electrode for connecting to a first region of the semiconductor part; a control wiring layer for connecting to a second region of the semiconductor part; a blocking member electrically isolated from the control wiring layer; a first metallic layer; a protection film disposed among the main electrode, the control wiring layer and the blocking member; and a metal block for connecting to the main electrode through the first metallic layer. The chip, the main electrode, the control wiring layer, the blocking member, and the metal block are packaged. The blocking member is disposed between the main electrode and the control wiring layer.

Package type semiconductor device

A semiconductor element, and a pair of insulation substrates sandwiching the semiconductor element therebetween forms a substrate unit. The substrate unit is press-fitted in a recess provided between first radiation block and cooling block. The press-fitting of the substrate unit is performed by a second radiation block which is screwed to push the first radiation block toward the cooling block. A high thermal-conductive radiation material is disposed at the interfaces between each of the insulation substrates and each of the blocks to keep adhesiveness therebetween.

Semiconductor apparatus with heat radiation structure for removing heat from semiconductor element

A semiconductor device includes a semiconductor chip generating heat, a pair of heat sinks, which face each other, to conduct heat from both surfaces of the chip, a pair of compressible insulating sheets, and a mold resin covering the chip, the heat sinks, and the sheets such that the sheets are exposed from the surface of the resin. The mold resin is prevented from covering the outer surfaces of the heat sinks, which are pressed by mold parts, and breakage of the chip is avoided during molding. The plates are insulated by the sheets, so no dedicated insulating sheets for the heat sinks are needed after the device is completed.

Semiconductor device and method for manufacturing semiconductor device

Semiconductor device having heat conducting plate

A semiconductor device includes a semiconductor chip, a first heat sink, a second heat sink, and a mold resin. The first heat sink is electrically and thermally connected to a surface of the semiconductor chip for functioning as an electrode for the semiconductor chip and releasing the heat generated by the semiconductor chip. The second heat sink is electrically and thermally connected to another surface of the semiconductor chip for functioning as another electrode for the semiconductor chip and releasing the heat. The semiconductor chip and the first and second heat sinks are covered with the mold resin such that the heat sinks are exposed on a substantially flat surface of the mold resin.

Growing community of inventors

Okazaki, Japan

Takanori Teshima