Shin-Etsu Chemical Co., Ltd.

Shin-Etsu Chemical C., Ltd

Takanobu Takeda

Jun Hatakeyama

Osamu Watanabe

Satoshi Watanabe

Jun Watanabe

Ryuji Koitabashi

Tamotsu Watanabe

Toshinobu Ishihara

Hideto Kato

Youichi Ohsawa

Keiichi Masunaga

Takeshi Kinsho

Akinobu Tanaka

Akihiro Seki

Wataru Kusaki

Koji Hasegawa

Tsutomu Ogihara

Tsunehiro Nishi

Katsuya Takemura

Michihiro Sugo

Tomohiro Kobayashi

Takaaki Shimizu

Tatsushi Kaneko

Kazunori Maeda

Satoshi Asai

Hideshi Kurihara

Kyoko Soga

Kazuhiro Hirahara

Takato Sakurai

Daisuke Manba

Takeru Watanabe

Masaki Ohashi

Tohru Kubota

Mutsuo Nakashima

Hiroyuki Yasuda

Shigehiro Nagura

Shohei Tagami

Toshihiko Fujii

Takeshi Nagata

Kazuyuki Asakura

Yasufumi Kubota

Kenji Koizumi

Hiroshi Kubota

Tsugio Kaneda

Hiroshi Miyakoshi

Asai Satoshi

Hideo Kato

Nishi Tsunehiro

A chemically amplified negative resist composition comprises a polymer comprising recurring hydroxystyrene units and recurring styrene units having electron withdrawing groups substituted thereon. In forming a pattern having a fine feature size of less than 0.1 &#x3bc;m, the composition exhibits a high resolution in that a resist coating formed from the composition can be processed into such a fine size pattern while the formation of bridges between pattern features is minimized.

Chemically amplified negative resist composition and patterning process

An adhesive composition useful in bonding a protective glass with a silicon substrate of a semiconductor device contains (A) an epoxy-containing high-molecular compound and (B) a solvent. The compound (A) has a weight average molecular weight of 3,000 to 500,000 and repeating units represented by the following formula (1): 

Adhesive composition and adhesive dry film

Disclosed herein is a photocurable dry film including a structure having a photocurable resin layer sandwiched between a support film and a protective film, the photocurable resin layer being formed of a photocurable resin composition including ingredients (A) to (D): (A) a silicone skeleton-containing polymer compound having the repeating units represented by the following general formula (1) wherein X and Y, respectively, a divalent organic group represented by the following general formula (2) or (3) (B) a crosslinking agent selected from formalin-modified or formalin-alcohol-modified amino condensates and phenolic compound having on average two or more methylol groups or alkoxymethylol groups in one molecule;(C) a photoacid generator capable of generating an acid by decomposition with light having a wavelength of 190 to 500 nm; and(D) a solvent.

Photocurable dry film, method for preparing same, patterning method and film for protecting electric and electronic parts

A photocurable composition includes: where Rto Rare each a hydrocarbon group, m is an integer of 1 to 100, a, b, c and d are each 0 or a positive number, such that 0&#x3c;(c+d)/(a+b+c+d)&#x2266;1.0, and X and Y are each the formula (2) or (3), provided that at least one group of the formula (3) is present,  

Photocurable resin composition, dry film thereof, pattern forming method, and electrical/electronic part protective film

A photo-curable resin composition comprising an epoxy-containing silphenylene or silicone polymer with a Mw of 3,000-500,000 forms a coating which is useful as a protective film for electric/electronic parts.

Epoxy-containing polymer, photo-curable resin composition, patterning process, and electric/electronic part protective film

There is disclosed a silphenylene skeleton-containing silicone type polymer comprising a repeating unit represented by the following general formula (1) and having a weight average molecular weight of 5,000 to 40,000. There can be a novel silphenylene skeleton-containing silicone type polymer which enables to satisfy both chemical resistance and adhesiveness to a substrate and can be used as a material for a thermosetting resin for forming coatings for protecting substrates, circuits, and interconnections; and a method for manufacturing the same. 

Silphenylene skeleton-containing silicone type polymer and method for manufacturing the same

Bisphenol derivatives having both alcoholic hydroxyl and allyl groups are novel and useful as reagents for modifying organic resins and silicone resins.

Alcoholic hydroxyl-containing compounds and making method

Provided are a preparation method of a resist composition which enables stabilization of a dissolution performance of a resist film obtained from the resist composition thus prepared; and a resist composition obtained by the preparation process and showing small lot-to-lot variations in degradation over time. The process of the present invention is for preparing a chemically amplified resist composition containing a binder, an acid generator, a nitrogenous basic substance and a solvent and it has steps of selecting, as the solvent, a solvent having a peroxide content not greater than an acceptable level, and mixing constituent materials of the resist composition in the selected solvent.

Preparation process of chemically amplified resist composition

A photomask blank has a resist film comprising (A) a base resin, (B) an acid generator, and (C) a basic compound. The resist film further comprises (D) a polymer comprising recurring units having a side chain having a fluorinated hydrocarbon group which contains a carbon atom to which a hydroxyl group is bonded and vicinal carbon atoms bonded thereto, the vicinal carbon atoms having in total at least two fluorine atoms bonded thereto. Addition of polymer (D) ensures uniform development throughout the resist film, enabling to form a resist pattern having high CD uniformity.

Photomask blank, resist pattern forming process, and photomask preparation process

A polyimide silicone having in the molecule a phenolic hydroxy group in which a part or all of hydrogen atoms are substituted with an acid labile group is provided. The polyimide silicone comprises the unit represented by the formula (1): wherein X is a tetravalent group at least a part of which is a tetravalent organic group represented by the formula (2): wherein Ris a monovalent hydrocarbon group, Ris a trivalent group, and n is an integer of 1 to 120 on average; and Y is a divalent organic group at least a part of which is a divalent organic group having a phenolic hydroxy group in which a part or all of hydrogen atoms are substituted with an acid labile group represented by the formula (3): wherein Rand Rare a hydrogen atom or an alkyl group, and Ris an alkyl group, an aryl group, or an aralkyl group. Rand R, Rand R, or Rand Rmay be bonded to each other to form a ring together with the carbon atom or the carbon atom and the oxygen atom to which they are bonded with the proviso that the R, R, and Rare independently an alkylene group.

Polyimide silicone, photosensitive resin composition containing the novel polyimide silicone, and method for pattern formation

There is disclosed a chemically amplified positive resist composition to form a chemically amplified resist film to be used in a lithography, wherein the chemically amplified positive resist composition comprises at least, (A) a base resin, insoluble or poorly soluble in an alkaline solution, having a repeating unit whose phenolic ydroxyl group is protected by a tertiary alkyl group, while soluble in an alkaline solution when the tertiary alkyl group is removed; (B) an acid generator; (C) a basic component; and (D) an organic solvent, and a solid component concentration is controlled so that the chemically amplified resist film having the film thickness of 10 to 100 nm is obtained by a spin coating method. There can be provided, in a lithography, a chemically amplified positive resist composition giving a high resolution with a suppressed LER deterioration caused by film-thinning at the time of forming a chemically amplified resist film with the film thickness of 10 to 100 nm, and a resist patterning process using the same.

Chemically amplified positive resist composition and resist patterning process

There is disclosed a chemically-amplified positive resist composition comprising, as main components, (A) a base polymer, which contains one or more kinds of a monomer unit represented by the following general formula (1) and the like, and is an alkali-insoluble polymer whose hydroxyl group is partly protected by an acetal group while alkali-soluble when deprotected by an acid catalyst, (B) a sulfonium salt containing a sulfonate anion, (C) a basic component, and (D) an organic solvent. In a lithography technology by a photo resist, an extremely high temporal stability is necessary. In addition, it must give a good pattern profile not dependent on a substrate and have a high resolution power. There can be provided a chemically-amplified positive resist composition which can solve these problems simultaneously, a resist patterning process using the same, and a method for producing a photo mask blank. 

Chemically-amplified positive resist composition and patterning process thereof

A polymer for use in photoresist compositions is synthesized by effecting polymerization reaction to form a polymerization product mixture and subjecting the mixture to molecular weight fractionation by a liquid phase separation technique using a good solvent and a poor solvent. The fractionation step is iterated at least twice, and one iteration of fractionation includes adding a good solvent which is different from the good solvent added in the other iteration of fractionation.

Synthesis of photoresist polymer

There is disclosed a resist patterning process with a minimum line width of 65 nanometers or less may be formed by using a resist composition containing a polymer, as a base polymer of a chemically-amplified resist composition, composed of a styrene unit whose hydroxyl group is protected by an acid labile group, and an indene unit, and/or an acenaphthalene unit, wherein the polymer has the weight-average molecular weight of 4,000 to 7,000, and in particular, 4,500 to 5,500. One of the currently existing problems to be solved is the line edge roughness. To solve this problem by an acid-generator and a basic compound, there is a problem of the trade-off relationship with a resolution power. There can be provided a resist composition having a high resolution containing a base polymer such as hydroxystyrene that is protected by an acid labile group, a resist patterning process with a pattern rule of 65 nanometers or less having a reduced line edge roughness.

Resist patterning process and manufacturing photo mask

A chemically amplified positive resist composition comprises a compound having an amine oxide structure as a basic component, a base resin, a photoacid generator, and an organic solvent. The resist composition exhibits a high resolution, significantly prevents a line pattern from collapsing after development, and has improved etch resistance.

Resist composition and patterning process

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Joetsu, Japan

Takanobu Takeda