Nuflare Technology, Inc.

Kabushiki Kaisha Toshiba

Takanao Touya

Munehiro Ogasawara

Hirofumi Morita

Takahito Nakayama

Shuichi Tamamushi

Takeshi Fujiwara

Hiromu Inoue

Hiroyuki Ikeda

Eiji Sawa

Hidenori Sato

Hiroyuki Tanizaki

Kentaro Okuda

Hiroshi Tsukada

Hiroshi Matsumoto

Tsubasa Nanao

Mitsuhiro Okazawa

Shinsuke Nishimura

Toshiki Kimura

In one embodiment, a charged particle beam writing apparatus includes a positioning deflector adjusting an irradiation position of a charged particle beam radiated to a substrate which is a writing target, a fixed deflector which is disposed downstream of the positioning deflector in a traveling direction of the charged particle beam, and in which an amount of deflection is fixed, a focus correction lens performing focus correction on the charged particle beam according to a surface height of the substrate, and an object lens focusing the charged particle beam.

Charged particle beam writing apparatus

In one embodiment, a multi charged particle beam writing apparatus includes a blanking aperture array substrate provided with a plurality of blankers configured to respectively perform blanking deflection on a plurality of charged particle beams included in a multi-beam, and a first shield member which is disposed downstream of the blanking aperture array substrate with respect to a travel direction of the multi-beam, has a cylindrical part in which the multi-beam passes through, and is composed of a high magnetic permeability material.

Multi charged particle beam writing apparatus

The present invention quickly calculates values of optimal excitation parameters which are set in lenses in multiple stages. A multi charged particle beam adjustment method includes forming a multi charged particle beam, calculating, for each of lenses in two or more stages disposed corresponding to object lenses in two or more stages, a first rate of change and a second rate of change in response to change in at least an excitation parameter, the first rate of change being a rate of change in a demagnification level of a beam image of the multi charged particle beam, the second rate of change being a rate of change in a rotation level of the beam image, and calculating a first amount of correction to the excitation parameter of each of the lenses based on an amount of correction to the demagnification level and the rotation level of the beam image, the first rate of change, and the second rate of change.

Multi charged particle beam adjustment method, multi charged particle beam irradiation method, and multi charged particle beam irradiation apparatus

A charged particle beam writing apparatus according to one aspect of the present invention includes an emission unit to emit a charged particle beam, an electron lens to converge the charged particle beam, a blanking deflector, arranged backward of the electron lens with respect to a direction of an optical axis, to deflect the charged particle beam in the case of performing a blanking control of switching between beam-on and beam-off, a blanking aperture member, arranged backward of the blanking deflector with respect to the direction of the optical axis, to block the charged particle beam having been deflected to be in a beam-off state, and a magnet coil, arranged in a center height position of the blanking deflector, to deflect the charged particle beam.

Charged particle beam writing apparatus, method of adjusting beam incident angle to target object surface, and charged particle beam writing method

In one embodiment, a charged particle beam writing apparatus includes an emitter emitting a charged particle beam, a first aperture shaping the charged particle beam, a second aperture shaping the charged particle beam transmitted through the first aperture, a projection lens projecting the charged particle beam transmitted through the first aperture on the second aperture, an object lens focusing the charged particle beam transmitted through the second aperture, the object lens being a magnetic field-type lens, and an electrostatic lens performing focus correction of the charged particle beam in accordance with a surface height of a substrate that is a writing target. The electrostatic lens is disposed inside the object lens, a positive voltage is applied to an electrode of the electrostatic lens. A strength of a magnetic field of the object lens at an upper end of the electrode has a predetermined value or less.

Charged particle beam writing apparatus and charged particle beam writing method

A charged particle beam writing method includes forming an aperture image by making a charged particle beam pass through an aperture substrate, changing, in the state where a plurality of crossover positions of the charged particle beam and positions of all of one or more intermediate images of the aperture image are adjusted to matching positions with respect to the aperture image with the first magnification, magnification of the aperture image from the first magnification to the second magnification by using a plurality of lenses while maintaining the last crossover position of the charged particle beam and the position of the last intermediate image of the aperture image to be fixed, and forming, using an objective lens, the aperture image whose magnification has been changed to the second magnification on the surface of the target object, and writing the aperture image.

Charged particle beam writing method and charged particle beam writing apparatus

A blanking device for multi charged particle beams includes a first substrate, in which plural first openings are formed in an array, to form multi-beams, a second substrate in which plural second openings are formed in an array, where a corresponding beam of the multi-beams passes through each of the plural second openings, plural control electrodes, which are on the second substrate and each of which is close to a corresponding one of the plural second openings and arranged not to be directly exposed to other second opening adjacent to the corresponding one of the plural second openings, to be switchably applied with first and second potentials, plural counter electrodes, each of which is facing a corresponding one of the plural control electrodes, to be applied with the second potential, and a shield film provided between the first substrate and the plural control electrodes.

Blanking device for multi charged particle beams, and multi charged particle beam irradiation apparatus

A multi charged particle beam irradiation apparatus includes a shaping aperture array substrate, where plural openings are formed as an aperture array, to shape multi-beams by making a region including entire plural openings irradiated by a charged particle beam, and making portions of a charged particle beam individually pass through a corresponding one of the plural openings; and a plurality of stages of lenses, arranged such that a reduction ratio of multi-beams by at least one lens of a stage before the last stage lens is larger than that of the multi-beams by the last stage lens, to correct distortion of a formed image obtained by forming an image of the aperture array by the multi-beams, and to form the image of the aperture array by the multi-beams at a height position between the last stage lens and a last-but-one stage lens, and at the surface of a target object.

Multi charged particle beam irradiation apparatus, multi charged particle beam irradiation method, and multi charged particle beam adjustment method

A method and system for imaging an object to be inspected and obtaining an optical image; creating a reference image from design pattern data; preparing an inspection recipe including one or more templates and parameter settings necessary for the inspection; checking the pattern and the template against each other, and selecting the reference image which corresponds to the template; detecting first and second edges in the selected reference image in accordance with the parameter setting using determined coordinates as a reference; detecting first and second edges in the optical image, this optical image corresponds to the selected reference image; and determining an inspection value by acquiring the difference between the line width of the optical image and the reference image using the first edge and second edge of the reference image and the first edge and second edges of the optical image.

Inspection system and method for inspecting line width and/or positional errors of a pattern

An electron beam writing apparatus comprising a stage that a sample is placed on, an electron optical column, an electron gun emitting an electron beam disposed in the optical column, an electrostatic lens provided with electrodes aligned in an axial direction of the electron beam disposed in the optical column, and a voltage supply device for applying positive voltage constantly to the electrostatic lens. A shield plate is disposed between the XY stage and the electron optical column to block reflected electrons or secondary electrons generated by irradiation to the sample with the electron beam. The electrostatic lens is disposed immediately above the shield plate to change a focal position of the electron beam. A voltage supply device applies a positive voltage constantly to the electrostatic lens.

Electron beam writing apparatus and electron beam writing method

A charged particle beam pattern writing method according to an embodiment, includes measuring a position displacement amount of a stage above which a target object is placed, in a rotation direction; and writing a pattern of a beam image on the target object above the stage while the beam image is rotated, by using a plurality of electrostatic lenses at least one of which is arranged in a magnetic field of each of the plurality of electromagnetic lenses whose magnetic fields are in opposite directions, to avoid a focus displacement of a charged particle beam passing through the plurality of electromagnetic lenses and to correct the position displacement amount measured, in the rotation direction of the stage.

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Kanagawa, Japan

Takanao Touya