Nec Electronics Corporation

Nec Corporation

Takamasa Tanikuni

Tatsuya Usami

Norio Okada

Hidemitsu Aoki

Koichi Ohto

Hiroaki Tomimori

Yasuhide Den

A wiring member which becomes substantially symmetrical on the plane of an electrostatic chuck unit is connected to the tip end of an RF introduction rod between the RF introduction rod and the electrostatic chuck unit in order to make uniform generation of an electric field due to bias RF which becomes a cause of plasma damage. The connection point between the electrostatic chuck unit and the wiring member may be single or plural.

Plasma processing apparatus, semiconductor manufacturing apparatus and electrostatic chucking unit used thereof

In order to provide a manufacturing method of a semiconductor device which can improve the interconnection lifetime, while controlling the increase in resistance thereof, and, in addition, can raise the manufacturing stability; by applying a plasma treatment to the surface of a copper interconnectionwith a source gas comprising a nitrogen element being used, a copper nitride layeris formed, and thereafter a silicon nitride filmis formed. Hereat, under the copper nitride layer, a thin copper silicide layeris formed.

Manufacturing method of semiconductor device

In order to provide a manufacturing method of a semiconductor device which can improve the interconnection lifetime, while controlling the increase in resistance thereof, and, in addition, can raise the manufacturing stability; by applying a plasma treatment to the surface of a copper interconnection with a source gas comprising a nitrogen element being used, a copper nitride layer is formed, and thereafter a silicon nitride film is formed. Hereat, under the copper nitride layer , a thin copper silicide layer is formed.

Manufacturing method of semicondcutor device

Growing community of inventors

Tokyo, Japan

Takamasa Tanikuni