Kabushiki Kaisha Toshiba

Takahito Nagamatsu

Makoto Honda

Haruo Okano

Nobuo Hayasaka

Hisashi Kaneko

Rempei Nakata

Hirokazu Ezawa

Riichirou Aoki

Hitoshi Ito

Yukio Nishiyama

Hideaki Harakawa

Hideto Matsuyama

Masanori Numano

Kaori Yomogihara

Kazuhiro Murakami

Akemi Satoh

Masao Toyosaki

Kei Hattori

Keiji Fujita

Masayuki Jinguuji

An ion implantation apparatus according to an embodiment includes an ion implantation unit, a position detection unit, a charge supply unit, a current value detection unit, and a determination unit. The ion implantation unit scans the surface of a substrate with an ion beam containing positively charged ions and implants the ions into the substrate. The position detection unit detects the scan position of the ion beam on the substrate. The charge supply unit generates a plasma, emits electrons contained in the plasma, and supplies the electrons to the substrate. The current value detection unit detects a current value that changes in accordance with the amount of electrons emitted by the charge supply unit. The determination unit determines the charge build-up state of the substrate based on a change in the current value, the change being accompanied by a change in the scan position.

Ion implantation apparatus and method of determining state of ion implantation apparatus

An insulating film formed on a conducting layer is dry-etched so as to make a connection hole in the insulating film to expose the conducting layer. Plasma is supplied onto the exposed conducting layer to dry-clean a damage layer produced in the connection hole. A product produced in the connection hole as a result of the dry cleaning is removed by a wet process. An oxide film formed in the connection hole as a result of the wet process is etched by a chemical dry process using a gas including either NFor HF. A thermally decomposable reaction product produced as a result of the etching is removed by heat treatment.

Method of manufacturing a semiconductor device from which damage layers and native oxide films in connection holes have been removed

Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:

Semiconductor device

Method of manufacturing silicon oxide film containing fluorine

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Oita, Japan

Takahito Nagamatsu