Other

Kabushiki Kaisha Ultraclean Technology Research Institute

Sipec Corporation

Tadahiro Ohmi

Fujikin Inc.

Foundation for Advancement of International Science

I & F, Inc.

Stella Chemifa Kabushiki

Fujiken, Inc.

Kabushiki Kaiha Ultraclean Technology Research Institute

Takahisa Nitta

Yasuyuki Shirai

Nobuhiro Miki

Osamu Nakamura

Tadashi Shibata

Masaki Hirayama

Koji Kotani

Ryu Kaiwara

Toshiyuki Nozawa

Nobukazu Ikeda

Nobuyoshi Tanaka

Kazuhide Ino

Toshikuni Shinohara

Yoshiaki Yamaguchi

Akira Nakada

Haruyuki Takano

Makoto Imai

Takeo Ushiki

Masanori Fujibayashi

Akihiro Morimoto

Yoshikazu Tanabe

Yukio Minami

Keiji Hirao

Hiroshi Morokoshi

Koji Kawada

Naofumi Yasumoto

Yasuyuki Harada

Kenji Mori

Toshihiro Ii

Kazuhiko Kawada

Toshikazu Abe

Toshihiro Il

Mitsunori Nakamori

Masahiro Konnda

Takayuki Jizaimaru

Shunkichi Omae

Senri Ojima

Tatsuro Morimoto

Keng Hoong Wee

Takemi Yonezawa

Taiji Hashimoto

Hirosi Arakawa

A fixing structure for a welding electrode and a welding head is shown which enable improvement of durability of a welding electrode, improvement of work efficiency in welding, and a reduction of time required for welding and also which make it possible to execute welding for an extended time with high reliability. In the fixing structure, a fixed section of a welding electrode is inserted via a thermally conductive material into an inserting section of a fixing base and a peripheral surface of the fixed section of the welding electrode is uniformly contacted to the fixing base to affix the welding electrode to the fixing base.

Long life welding electrode and its fixing structure, welding head, and welding method

A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside of the container, and an electrode for holding an object to be treated is located inside the container. The microwave radiating surface of the antenna and the surface of the object to be treated with plasma are positioned in parallel and opposite to each other. A wall section of the container other than that constituting the first dielectric plate is composed of a member of a material having electrical conductivity higher than that of aluminum, or the internal surface of the wall section is covered with the member. The thickness (d) of the member is larger that (2/&#x3bc;&#x3c3;), where &#x3c3;, &#x3bc;and &#x3c9; respectively represent the electrical conductivity of the member, the permeability of vacuum and the angular frequency of the microwaves radiated from the antenna.

Plasma method with high input power

There is provided a semiconductor circuit for arithmetic processing and an arithmetic processing method that can increase the rate of processing data and reduces the area of a circuit by suppressing wasteful processing. There is provided a computing unit for computing input data, and this computing unit computes input digit data within a computation time unit and outputs a computation result representing a result obtained by the computation, and if a carry is generated in the computation a computation circuit (adders) for outputting carry data representing this carry, and delay means (memory) for delaying the computation result from the computation circuit by one computation time unit, are provided.

Semiconductor circuit for arithmetic processing and arithmetic processing method

A chemical supply system comprises, as principal elements, a chemical storage tank in which a liquid chemical for cleaning is stored in the state of its formulated concentrate, a chemical supply apparatus connected to the chemical storage tank for positively performing chemical supply, a piping system connected to the chemical supply apparatus to form a supply flow passage that is a passage for ultrapure water which the liquid chemical is to be mixed with, a pair of discharge nozzles disposed at end portions of the piping system so as to oppose surfaces of a wafer set in a cleaning chamber to supply a cleaning liquid onto the surfaces. Thereby, remarkable miniaturization/simplification of a cleaning liquid supply system including chemical tanks is intended, it is made possible easily and rapidly to compound and supply a cleaning liquid at an accurate chemical concentration, and particles or the like being generated and mixing in a cleaning liquid, are suppressed to the extremity.

Chemical supply system

The present invention provides a welding method for materials to be welded which are subjected to fluoride passivation treatment, and a fluoride passivation retreatment method, wherein, when fluoride passivation retreatment was conducted after welding, there is no generation of particles or dust, and superior resistance is provided to fluorine system gases. In the present invention, when materials to be welded comprising stainless steel subjected to fluoride passivation treatment are welded, hydrogen is added to the gas (the back shield gas) flowing through the materials to be welded. Furthermore, in the welding method for materials to be welded which are subjected to fluoride passivation treatment in accordance with the present invention, the thickness of the fluoride passivated film in a predetermined range from the butt end surfaces of the materials to be welded, comprising stainless steel subjected to a fluoride passivation treatment, is set to 10 nm or less, and welding is conducted. Furthermore, in the fluoride passivation retreatment method in accordance with the present invention, after conducting the welding method described above, at least the welded parts are heated, and a gas containing fluorine gas is caused to flow in the interior part.

Welding method for fluorine-passivated member for welding, fluorine-passivated method after being weld, and welded parts priority data

A welding method for materials to be welded which are subjected to fluoride passivation treatment, and a fluoride passivation retreatment method, wherein, when fluoride passivation retreatment is conducted after welding, there is no generation of particles or dust. The method provides superior resistance to fluorine system gases. During fluoride passivation treatment, hydrogen is added to the gas (the back shield gas) flowing through the materials to be welded. In one embodiment of the welding method, the thickness of the fluoride passivated film in a predetermined range from the butt end surfaces of the materials to be welded is set to 10 nm or less, followed by subsequent welding. Furthermore, the fluoride passivation retreatment method, includes the steps of heating at least the welded parts following welding and flowing a gas containing fluorine gas in the interior portion of the parts.

Welding method for welded members subjected to fluoride passivation treatment, fluoride passivation retreatment method, and welded parts

A reactor comprising a body made of a heat-resistant material and having an inlet and an outlet for water/moisture gas, having a gas-diffusing member provided in an internal space of the body, and having a platinum coating on an internal wall surface of the body. Hydrogen and oxygen fed from the inlet are diffused by the gas-diffusing member and then come into contact with the platinum coating to enhance reactivity, thereby producing water. A temperature of the reactor is held to be below an ignition temperature of hydrogen or a hydrogen-containing gas. The platinum-coated catalyst layer on the internal wall of the reactor body is formed by treating the surface of the internal wall of the body, cleaning the treated surface, forming a barrier coating of a nonmetallic material of an oxide or nitride on the wall surface, and forming the platinum coating on the barrier coating.

Reactor for generating moisture

There is provided a semiconductor circuit for arithmetic processing and an arithmetic processing method that can increase the rate of processing data and reduces the area of a circuit by suppressing wasteful processing. There is provided a computing unit for computing input data within a computation time unit and outputs a computation result representing a result obtained by the computation, and if a carry is generated in the computation a computation circuit (adders ) for outputting carry data representing this carry, and delay means (memory ) for delaying the computation result from the computation circuit by one computation time unit, are provided.

Semiconductor circuit for arithmetic operation and method of arithmetic operation

The plasma process apparatus is capable of uniformalizing the density of a plasma generated thereby and a self-bias voltage associated therewith. This apparatus include two parallel plates electrodes I and II, one of electrodes I and II being configured for carrying a substrate to be plasma processed. The apparatus further includes a magnetic field applying means for applying a magnetic field horizontal and one-directional to a surface of the substrate. An additional element of the apparatus is a single auxiliary electrode positioned around the periphery of electrode I and having high-frequency power applied thereto. The alignment of the electrodes is such that they define a space where a plasma for use in processing the substrate is to be excited.

Plasma process apparatus

A semiconductor arithmetic unit which realizes a maximum or minimum value retrieval operation at high speed and with a high degree of accuracy used in a vector quantization processor is composed of a binary-multivalue-analog merged operation processing circuit. A multi-loop circuit includes an amplifying circuit group composed of a plurality of sets of first amplifiers with a floating gate to which first electrodes and a single second electrode are capacitively coupled with a predetermined ratio, a logical operation circuit to which output signals of the amplifying circuit group are inputted and which outputs a logical 0 or 1, and a second amplifying circuit to which an output signal of the logical operation circuit is inputted and whose output is distributed to all of the second electrodes of the amplifying circuit group. The second amplifying circuit includes an adjusting circuit which adjusts an output current driving ability and a controlling circuit which controls the adjustment with a predetermined regulation. The adjustment of the controlling circuit is executed according to variation of the output of the logical operation circuit.

Semiconductor arithmetic unit

By a simple apparatus construction and process, it is made possible to &ldquo;clean precisely&rdquo; a surface at the molecular/atomic level, and the purification degree of the surface processed minutely is made into 10 molecules/cm or less. A steam-spraying nozzle is disposed such that a line slit nozzle is in a diameter direction, and mist-containing steam is sprayed onto the surface of a substrate. Thereby, particles in the steam-spraying surface (the particles were made to adhere by dipping the substrate in a solution containing polystyrene (particle diameter of 0.6 &mgr;m) or alumina (particle diameter of 0.3 &mgr;m to 0.5 &mgr;m) particles at 10 particles/ml.) are removed by about 90% to 95% after ten-seconds spraying, and by 99% or more, that is, to less than the detection limit of a wafer inspection device, after twenty-seconds spraying.

Surface purification apparatus and surface purification method

A method for forming an oxidation-passive layer having high corrosion resistance to highly oxidizing materials such as ozone; a stainless steel and a titanium base alloy having corrosion resistance to an ozone containing fluid; and a fluid containing part, a process apparatus, and a fluid feed/discharge system made by using the same. The method comprises the steps of heat-treating the surface of a stainless steel or titanium-base alloy having an Al content of 0.5 percent by weight to 7 percent by weight either at 300&deg; C. to 700&deg; C. in a mixed gas atmosphere composed of an inert gas and 500 ppb to 1 percent H O gas or 1 ppm to 500 ppm oxygen gas, or alternatively at 20&deg; C. to 300&deg; C. in a mixed gas atmosphere composed of an oxygen gas and at least 100 ppm ozone gas to form an oxidation-passive layer containing an aluminum oxide or a titanium oxide.

Method for forming oxidation-passive layer, fluid-contacting part, and fluid feed/discharge system

A line slit nozzle for spraying steam is disposed along a diameter of a resist film. Steam containing a mist is sprayed onto a surface of the resist film. The film is thereby peeled off and removed. By using a change in physical properties (swelling, etc.) of the resist film by water, the film is easily and surely peeled off. Breakaway from much resources/energy consumption type techniques is realized. In other words, realized are environment-symbiosis type techniques by which resist films can be removed independently of the quantity of energy and kinds of chemical solvents.

Resist film removal apparatus and resist film removal method

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Tokyo, Japan

Takahisa Nitta