Tokyo Electron Limited

Takahisa Iwasaki

Shinya Morikita

Takanori Banse

Kosuke Ogasawara

Ryosuke Niitsuma

Hideyuki Hatoh

Kentaro Ishii

Chiju Hsieh

Seiji Ide

Yoshisato Oikawa

Hiroki Taoka

A method of etching a film of a substrate is provided. The substrate includes an underlying region, the film and a mask. The film is provided on the underlying region. The mask is provided on the film. The method includes performing main etching on the film. The main etching is plasma etching of the film and exposes at least a part of the underlying region. The method further includes forming a protective layer on at least a side wall surface of the mask after the performing of the main etching. A material of the protective layer is different from a material of the film. The method further includes performing over-etching on the film after the forming of the protective layer. The over-etching is plasma etching of the film.

Method of etching film and plasma processing apparatus

In a plasma processing method, a carbon-containing film is formed on surfaces of components in a chamber by using a plasma of a carbon-containing gas, and a silicon-containing film whose film thickness is determined based on a film thickness of the carbon-containing film is formed on a surface of the carbon-containing film by a silicon-containing gas. Then, a target object is loaded into the chamber and processed by a plasma of a processing gas after the formation of the silicon-containing film. The silicon-containing film is removed from the surface of the carbon-containing film by using a plasma of a fluorine-containing gas after the target object processed by the plasma is unloaded from the chamber, and the carbon-containing film is removed from the surfaces of the components by using a plasma of an oxygen-containing gas.

Plasma processing method and plasma processing apparatus

A method of forming a pattern on a silicon layer of a substrate, to be processed, wherein a semiconductor device is formed at a front surface side of the substrate that is supported by a support substrate at the front surface side, includes an etching step of etching the substrate by plasma via a mask having a predetermined pattern formed at a back surface side of the silicon layer of the substrate; and a cleaning step of cleaning the substrate by plasma using cleaning gas obtained by mixing CF series gas and inert-gas, after the etching step.

Method of forming pattern and solid-state image sensor device

Growing community of inventors

Miyagi, Japan

Takahisa Iwasaki