Hitachi-high-technologies Corporation

Hitachi, Ltd.

Other

Hitachi Electronics Engineering Co., Ltd.

Hitachi High-tech Electronics Engineering Co., Ltd.

Hitachi High-tech Corporation

Takahiro Jingu

Minori Noguchi

Hidetoshi Nishiyama

Akira Hamamatsu

Yoshimasa Ohshima

Sachio Uto

Tetsuya Watanabe

Shunichi Matsumoto

Hisato Nakamura

Yuta Urano

Takanori Ninomiya

Yukio Kembo

Yoshio Morishige

Shuichi Chikamatsu

Keiji Sakai

Ryouji Matsunaga

Kenji Watanabe

Hisashi Hatano

Kazuo Takahashi

Masahiro Watanabe

Toshifumi Honda

Toshihiko Nakata

Masaaki Ito

Yoshimasa Ooshima

Hiroyuki Nakano

Masami Makuuchi

Taketo Ueno

Yukihisa Mohara

Seiji Otani

Takahiro Togashi

Izuo Horai

Katsuya Suzuki

Takanori Kondo

Hirokazu Koyabu

Hiroshi Kawaguchi

Wen Zheng Li

Kenji Oka

Masayoshi Takahashi

Masataka Shiba

Seiji Ishikawa

Ritsuro Orihashi

Toshimitsu Hamada

Kengo Imagawa

Kazuhiro Zama

Yusuke Miyazaki

Masami Ikota

Ritsurou Orihashi

Kazunori Nemoto

Yuko Inoue

Keiichi Saiki

Kenshiro Ohtsubo

Nobuaki Hirose

Toshiaki Yachi

Hideo Ota

Tetsuyai Watanabe

Naoki Go

A charged particle beam apparatus includes an irradiation system that supplies a converged charged particle beam to a sample and scans the sample with the charged particle beam, an imaging optical system that images the energy generated in the sample, a detection system that detects an image formed by the imaging optical system with an avalanche photodiode array, and a control unit that changes a pixel to be operated in a Geiger mode among pixels configuring the avalanche photodiode array according to movement of an irradiation range of the energy.

Charged particle beam device

A sample for coordinates calibration including (1) a substrate having a circular plate-shape, and (2) multiple intentional defects that form a grid pattern with squares as unit grids on a surface of the substrate, the intentional defect providing a center point of the grid pattern coinciding with a center point of the substrate and, letting the maximum value of a number of the unit grids arranged from the center point of the substrate in radial directions be N (a natural number equal to or larger than two), a number of the intentional defects formed at equal spaces along one side of the unit grid being N+1 including the two intentional defects providing a vertex of the unit grid is proposed.

Sample for coordinates calibration and method for fabricating the same

A defect inspection method includes an illumination light adjustment step of adjusting light emitted from a light source, an illumination intensity distribution control step of forming light flux obtained in the illumination light adjustment step into desired illumination intensity distribution, a sample scanning step of displacing a sample in a direction substantially perpendicular to a longitudinal direction of the illumination intensity distribution, a scattered light detection step of counting the number of photons of scattered light emitted from plural small areas in an area irradiated with illumination light to produce plural scattered light detection signals corresponding to the plural small areas, a defect judgment step of processing the plural scattered light detection signals to judge presence of a defect, a defect dimension judgment step of judging dimensions of the defect in each place in which the defect is judged to be present and a display step of displaying a position on sample surface and the dimensions of the defect in each place in which the defect is judged to be present.

Defect inspection method, low light detecting method, and low light detector

An inspection apparatus which can be accurately calibrated regardless of a use environment or an amount of use time is implemented. A reference substrateprovided with a diffraction gratingis mounted on a transport system, an illumination regionis formed on the diffraction gratingby lightfrom an illumination optical system, reflected light is collected by a detection optical system, and an output value from a sensoris measured. It is determined whether or not a difference between a simulation value preserved in a processing sectionand the output value from the sensoris within a predetermined allowable range, and the optical system is adjusted so that the difference enters the allowable range. Since standard data for performing calibration on the inspection apparatus is obtained by using the diffraction grating, it is possible to implement the inspection apparatus which can be accurately calibrated regardless of a use environment or an amount of use time.

Inspection apparatus and adjusting method

The invention discloses a technique that estimates micro roughness from a total sum of detection signals from plural detection systems and signal ratios, using a light scattering method. The technique rotates and translates a wafer at high speed to measure the entire surface of the wafer with high throughput. The relationship between the micro roughness and the intensity of scattered light varies according to a material of the wafer and a film thickness thereof. Moreover, calibration of an apparatus is also necessary. Thus, for instance, the invention provides a technique that has a function of correcting an optically acquired detection result using a sample which is substantially the same as a measurement target and makes the optically acquired detection result come close to a result measured by an apparatus, such as an AFM, using a different measurement principle.

Surface measurement apparatus

An imaging device includes multiple sensor pixels that are arranged in a predetermined direction, each sensor pixel having multiple sensor pixel borders defining an outer edge part of the sensor pixel, among which at least one of a pair of sensor pixel borders that are opposed in the arrangement direction is oblique to a passage direction of a defect image that is vertical to the predetermined direction. This can provide an inspection tool enabling high sensitivity inspection and/or having improved detection reproducibility of a defect.

Inspection device and image capture element

A detection circuit for accurately detecting a very small foreign material and an inspection/measurement device using the same are provided. The inspection/measurement device includes: an irradiation section that irradiates a laser beam to a surface of a specimen; and a detection section that detects scattered light from the surface of the specimen and generates a detection signal. The detection section includes: a photon counting sensor that outputs M output signals from photo-detecting elements of N pixels (M and N are natural numbers, and M&#x3c;N); M current-voltage conversion sections that execute current-voltage conversion on the output signals of the photon counting sensor respectively; a voltage application section that applies reference voltages to the current-voltage conversion sections; and a detection signal generation section that generates a detection signal on the basis of the outputs of the current-voltage conversion sections.

Inspection device and measurement device

In an inspection apparatus, inspection is carried out by linearly moving a wafer while rotating the wafer with respect to light. In a case where the wafer is rotated, the velocity of flow of air in outer regions of the wafer is increased, and there is a possibility that the flow of the air in the outer regions cause particles contained in an atmosphere in the vicinity of the wafer to be adhered to the wafer. In a case where such particles are adhered to the wafer, the particles are also detected as a defect, and therefore yields and cleanliness in a semiconductor production process cannot be correctly evaluated. Therefore, it is desirable that adhesion of the particles contained in the atmosphere in the vicinity of the wafer to the wafer be reduced as much as possible. Further, it is expected that, when, for example, rotation speed of the wafer is increased or a diameter of the wafer is increased, such particles are adhered further remarkably. This point has not been satisfactorily considered in the conventional arts. The invention has a feature that a conductor such as a draft to outer regions is supplied from above a substrate while the substrate is being rotated and the supplied conductor is exhausted on outside of the substrate.

Inspection device

To detect an infinitesimal defect, highly precisely measure the dimensions of the detect, a detect inspection device is configured to comprise: a irradiation unit which irradiate light in a linear region on a surface of a sample; a detection unit which detect light from the linear region; and a signal processing unit which processes a signal obtained by detecting light and detecting a defect. The detection unit includes: an optical assembly which diffuses the light from the sample in one direction and forms an image in a direction orthogonal to the one direction; and a detection assembly having an array sensor in which detection pixels are positioned two-dimensionally, which detects the light diffused in the one direction and imaged in the direction orthogonal to the one direction, adds output signals of each of the detection pixels aligned in the direction in which the light is diffused, and outputs same.

Defect inspection device and defect inspection method

In a defect inspecting apparatus, the strength of a fatal defect signal decreases due to miniaturization. Thus, in order to assure a high SN ratio, it is necessary to reduce noises caused by scattered light from a wafer. Roughness of a pattern edge and surface roughness which serve as a scattered-light source are spread over the entire wafer. The present invention has discovered the fact that reduction of an illuminated area is a technique effective for decreasing noises. That is to say, the present invention has discovered the fact that creation of an illuminated area having a spot shape and reduction of the dimension of a spot beam are effective. A plurality of temporally and spatially divided spot beams are radiated to the wafer serving as a sample.

Apparatus for inspecting defect with time/spatial division optical system

Defect inspection method, low light detecting method and low light detector

An inspection device is required to detect a minute defect, that is, to have high sensitivity as semiconductor devices become finer. There are some approaches for improving the sensitivity. One is to shorten the wavelength of illuminating light radiated onto a sample. This is because, assuming that the wavelength of the illuminating light is &#x3bb;, I&#x221d;&#x3bb;is established between the magnitude of scattered light is I and &#x3bb;. Another approach is to use illuminating light including multiple wavelengths. An approach for taking in more scattered light generated from the sample is also possible. However, an optical system suitable for these approaches has not been sufficiently found in conventional techniques. One feature of the present invention is to detect a defect by using a Wolter optical system including a Wolter mirror.

To improve sensitivity of a defect inspection, it is required to decrease influence of excessive diffraction from a spatial filter. Further, it is preferable to secure signal intensity from defects and particles as much as possible, while the influence of the excessive diffraction is decreased as much as possible. The present invention is characterized in setting a width of a spatial filter surface such that an unnecessary image caused by diffraction, that is, an intensity of the excessive diffraction is sufficiently small with respect to an intensity of a desired image. In the present invention, an SN ratio that is an index for deciding a width of the spatial filter is calculated from a region subjected to the influence of the excessive diffraction in an inspection image, and a width of a shield unit of the spatial filter is set so as to maximize the SN ratio.

Inspection system

In conventional technologies in surface measurement and defect inspection, considerations are not made for the following points: (1) coarseness of resolution of spatial frequency; (2) variation of detection signal resulting from anisotropy of microroughness; and (3) variation of background signal resulting from anisotropy of microroughness. The present invention is characterized by acquiring a feature quantity about the anisotropy of the microroughness of the substrate surface. Further, the present invention is characterized by acquiring a surface state in consideration of the anisotropy of the microroughness of the substrate surface. Further the present invention is characterized by detecting a defect over the substrate in consideration of the anisotropy of the microroughness of the substrate surface.

Surface measurement device

Growing community of inventors

Takasaki, Japan

Takahiro Jingu