Toshiba Mitsubishi-Electric Industrial Systems Corporation

Ricoh Company, Ltd.

Kyoto University

Kochi Prefectural Public University Corporation

Mitsubishi Denki Kabushiki Kaisha

Tmeic Corporation

Takahiro Hiramatsu

Hiroyuki Orita

Takahiro Shirahata

Tetsuya Fujioka

Hideo Kanai

Satoshi Tsuchiya

Akihisa Mikawa

Yasunari Mikutsu

Yoshito Saito

Shizuo Fujita

Toshiyuki Kawaharamura

Hiroshi Kobayashi

Takayuki Uchida

Yoshinaga Kato

Takehiro Nishimori

Yukimi Nishi

Jun Mashimo

Taro Okuyama

Hironobu Abe

Mikiko Abe

Koichi Yamada

Kiyoto Igarashi

Tsuyoshi Shigemasa

Junichi Yokosato

Tsutomu Osawa

Masahiro Ujiie

Nobuyoshi Namito

Yusuke Iwao

Akihisa Mikama

Jun Masmimo

In an ultrasonic atomization apparatus of the present invention, a separator cup and four ultrasonic vibrators are provided to satisfy a reflected wave avoidance condition that 'four reflected waves are not received by any of the four ultrasonic vibrators'. Specifically, a set curvature of a bottom surface of the separator cup is set to be larger than a conventional set curvature. In addition, a distance from a center point of a bottom surface of the water tank of each of the four ultrasonic vibrators is set to be longer than a conventional distance.

Ultrasonic atomization apparatus

Inside a heating space of a heating chamber, a first heating treatment of moving a substrate along a substrate moving direction is performed by a first conveyor. After that, first conveyance processing of moving the substrate along a conveying direction is performed by a second conveyor. At this time, source mist is sprayed on the substrate by first thin film forming nozzles. Subsequently, second heating treatment is performed by a third conveyor. After that, second conveyance processing is performed by a fourth conveyor. At this time, source mist is sprayed on the substrate by second thin film forming nozzles.

Film forming apparatus

In a metal oxide film formation method of the present invention, the following steps are performed. In a solution vessel, a raw-material solution including aluminum as a metallic element is turned into a mist so that a raw-material solution mist is obtained. In a solution vessel provided independently of the solution vessel, a reaction aiding solution including a reaction aiding agent for formation of aluminum oxide is turned into a mist so that an aiding-agent mist is obtained. Then, the raw-material solution mist and the aiding-agent mist are fed to a nozzle provided in a reactor vessel via paths. Thereafter, the raw-material solution mist and the aiding-agent mist are mixed in the nozzle so that a mixed mist is obtained. Then, the mixed mist is fed onto a back surface of a heated P-type silicon substrate.

Metal oxide film formation method

A method for film-forming a buffer layer to be used for a solar cell, the buffer layer being disposed between a light absorbing layer and a transparent conductive film. Specifically, in this buffer layer film-forming method, a solution is formed into a mist, the solution containing zinc and almuminum as metal raw materials of the buffer layer. Then, a substrate disposed in the atmosphere is heated. Then, the mist of the solution is sprayed to the substrate being heated.

Buffer layer film-forming method and buffer layer

In the present invention, a p-type silicon substrate is produced, a solution containing aluminum is misted, and the misted solution is sprayed onto the back surface of the p-type silicon substrate under non-vacuum to form a back surface passivation film made of the aluminum oxide film on the back surface of the p-type silicon substrate. Thereafter, a light irradiation processing in which an interface between the p-type silicon substrate and the back surface passivation film is irradiated with ultraviolet light is performed.

Solar cell manufacturing method

An atomizing apparatus includes a container that accommodates a solution and a mist generator that forms the solution into a mist. An inner hollow structure is located in the container. The atomizing apparatus supplies a carrier gas into a gas supply space. The atomizing apparatus includes a connecting portion formed therein. The connecting portion connects a hollow of the inner hollow structure and the gas supply space.

Atomizing apparatus

A film forming apparatus includes a spray nozzle, a first chamber, a first gas supply port, a second chamber, a through hole, and a mist outlet. A solution transformed into droplets that is to be sprayed from the spray nozzle is housed in the first chamber and transformed into a mist in the first chamber by gas injected from the first gas supply port. The solution in mist form moves from the first chamber through the through hole to the second chamber and is misted onto a substrate from the mist outlet of the second chamber.

Film-forming apparatus to form a film on a substrate

In a method for producing a metal oxide film according to the present invention, a solution containing zinc is sprayed onto a substrate placed under non-vacuum, and then, a dopant solution containing a dopant is sprayed onto the substrate. After that, a deposited metal oxide film is subjected to a resistance reducing treatment. A molar concentration of the dopant supplied to the substrate with respect to a molar concentration of the zinc supplied to the substrate is not less than a predetermined value.

Method for producing metal oxide film and metal oxide film

Disclosed herein in a method of forming a metal oxide film, which can provide a high-quality metal oxide film while enhancing production efficiency. The method includes the steps of: turning a raw-material solution having a metallic element into a mist, to obtain a raw-material solution mist; turning a reaction aiding solution into a mist, to obtain an aiding-agent mist; feeding the raw-material solution mist and the aiding-agent mist into a mixing vessel, thereby mixing the raw-material solution mist and the aiding-agent mist, to obtain a mixed mist; and feeding the mixed mist onto a back surface of a substrate which is heated, to obtain a metal oxide film.

An imaging device includes an imaging unit having an imaging part, and a holder to hold the imaging part at one end; a housing including a recess part in a first surface to house the imaging unit; and a hinge device having a hinge member housed in the recess part pivotally coupled to the housing around an axle extending in parallel with the first surface. The imaging unit pivots around the axle via the hinge device between a housing position and a projecting position of the imaging unit. The imaging part includes a rectangular imaging element, a lens introducing external light into the imaging element, and a lens hood at an outer periphery of the lens. The lens hood projects from the lens surface by a distance allowing the imaging part to introduce necessary light from the lens into the imaging element and block unnecessary light.

Imaging device

The present invention provides a method for forming an oxide film by which normal formation of an oxide film is always achieved without receiving an influence of a change in the atmosphere, a metal oxide film having a low resistance can be formed, and a high efficiency of film formation is obtained. In the present invention, a raw material solution containing an alkyl compound is formed into a mist and ejected to a substrate () in the atmosphere. Additionally, an oxidizing agent that exerts an oxidizing effect on the alkyl compound is supplied to the mist of the raw material solution. Through the above-described processes, an oxide film is formed on the substrate in the present invention.

Oxide film deposition method and oxide film deposition device

A holding structure holds a reflecting mirror. The holding structure includes a reflecting mirror bracket holding the reflecting mirror; a protrusion disposed on the reflecting mirror; a protrusion supporting part disposed on the reflecting mirror bracket and supporting the protrusion; and a spacer disposed between the protrusion supporting part and the reflecting mirror bracket.

Holding structure for holding reflecting mirror, projection optical system unit, optical engine, and image projecting apparatus

There is provided a image projection apparatus including an image generation unit for generating an image by using light emitted from a light source, comprising: a movable unit configured to hold the image generation unit and to be able to change a position of the image generation unit; and a drive unit configured to drive the movable unit to move, wherein the movable unit is disposed to move horizontally.

High resolution image projection apparatus with horizontally actuated image generation unit

A method for manufacturing solar cell includes the following. A solution containing aluminum elements is misted. The misted solution is sprayed onto the main surface of a p-type silicon substrate in the atmosphere, to thereby form an aluminum oxide film. Then, a solar cell is produced using the p-type silicon substrate including the aluminum oxide film formed thereon.

A holding structure for holding a microphone includes a chassis configured to be separated into at least a first chassis and a second chassis; an elastic member formed of an elastic material, the elastic member including a holding unit configured to hold the microphone and an attachment portion provided in a periphery of the holding unit; and a retention member configured to retain the attachment portion at a predetermined position of the first chassis. The retention member is fixed to the first chassis by the second chassis in a state where the second chassis is attached to the first chassis.

Growing community of inventors

Tokyo, Japan

Takahiro Hiramatsu