Tokyo Electron Limited

Takahiro Furukawa

Yuji Kamikawa

Naoki Shindo

Teruomi Minami

Wallace Paul Printz

Derek Bassett

Tsukasa Watanabe

Antonio L P Rotondaro

Hideaki Sato

Takami Satoh

Hiromi Hara

Toshiyuki Shiokawa

Takahiro Kawazu

Yusuke Futamata

Techniques are provided to remove the growth of colloidal silica deposits on surfaces of high aspect ratio structures during silicon nitride etch steps. A high selectivity overetch step is used to remove the deposited colloidal silica. The disclosed techniques include the use of phosphoric acid to remove silicon nitride from structures having silicon nitride formed in narrow gap or trench structures having high aspect ratios in which formation of colloidal silica deposits on a surface of the narrow gap or trench through a hydrolysis reaction occurs. A second etch step is used in which the hydrolysis reaction which formed the colloidal silica deposits is reversible, and with the now lower concentration of silica in the nearby phosphoric acid due to the depletion of the silicon nitride, the equilibrium drives the reaction in the reverse direction, dissolving the deposited silica back into solution.

Process and apparatus for processing a nitride structure without silica deposition

Provided is an etching method including: an etching step of performing an etching processing using an etching liquid on a workpiece accommodated in an etching processing unit; and an interval step between the etching step on the workpiece and a next etching step on another workpiece. The etching step includes a first partial replacement pattern including discharging the etching liquid in the etching processing unit provided for the etching processing by a first set amount, and supplying a new etching liquid into the etching processing unit by a second set amount, and the interval step includes a second partial replacement pattern including discharging the etching liquid in the etching processing unit provided for the etching processing by a third set amount, and supplying a new etching liquid into the etching processing unit by a fourth set amount.

Etching method, etching apparatus, and storage medium

The present invention provides a substrate cleaning method capable of removing particles from the entire surface of a substrate to be processed at a high removing efficiency. In the substrate cleaning method according to the present invention, a substrate to be processed W is immersed in a cleaning liquid in a cleaning tank. Then, ultrasonic waves are generated in the cleaning liquid contained in the cleaning tank, so that the substrate to be processed W is subjected to an ultrasonic cleaning process. While the substrate to be processed is being cleaned, a dissolved gas concentration of a gas dissolved in the cleaning liquid contained in the cleaning tank is changed.

Substrate cleaning method, substrate cleaning system and program storage medium

A liquid processing apparatus is capable of uniformly processing substrates by a liquid process. The liquid processing apparatus has a chemical liquid tank ( ) containing a processing liquid for processing wafers (W) by a predetermined liquid process, a carrying device ( ) provided with a wafer holder ( ) capable of holding a plurality of wafers (W) to be subjected to the liquid process in a vertical position, and capable of carrying the wafers (W) between a processing position where the wafers (W) are immersed in the chemical liquid contained in the chemical liquid tank ( ) and a position above the processing position, and a cover ( ) for covering a space extending over the wafers (W) held on the wafer holder ( ) of the carrying device ( ) so that any air currents may not be substantially generated in the same space.

Liquid processing apparatus and liquid processing method

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Kurume, Japan

Takahiro Furukawa