Hitachi, Ltd.

Hitachi-high-technologies Corporation

Takafumi Okabe

Shunji Maeda

Kaoru Sakai

Minoru Yoshida

Atsushi Shimoda

Masahiro Watanabe

Hiroshi Goto

Minori Noguchi

Yuji Takagi

Maki Tanaka

Chie Shishido

Yukihiro Shibata

Masayuki Kuwabara

Naoya Takeuchi

Hidetoshi Nishiyama

Atsushi Yoshida

Seiji Hata

Yoichi Takahara

Mitsunobu Isobe

Makoto Ariga

Takushi Okada

Hisashi Mizumoto

A method of detecting a defect, including the steps of: illuminating step for illuminating a sample with a light; detecting step for detecting light from the specimen which is illuminated by the light and forming an image by processing the detected light; processing step for extracting a defect candidate by processing the image of the sample formed in the detecting step and determining an inspection condition by using images including the image of the sample acquired in the detecting step, a partial image including the extracted defect candidate and a reference image which corresponds to the partial image including the defect candidate.

Method and apparatus for inspecting pattern defects

An apparatus for inspecting pattern defects, the apparatus including: an image acquisition unit which acquires an image of a specimen and stores the acquired image in an image memory; a defect candidate extraction unit which performs a defect candidate extraction process by using the acquired image, which is read from the image memory; and a defect detection unit which performs a defect detection process based on a partial image containing a defect candidate that is extracted by the defect candidate extraction unit, wherein the defect detection process performed by the defect detection unit is performed asynchronously with an image acquisition process that is performed by the image acquisition unit.

A pattern inspection method and apparatus in which a deep ultraviolet light or an ultraviolet light is irradiated onto a specimen on which a pattern is formed, an image of the specimen which is irradiated with the deep ultraviolet light or the ultraviolet light is formed and the formed image is detected with a rear-surface irradiation type image sensor, which is sensitive to wavelengths of no greater than 400 nmm. A signal outputted from the image sensor is processed so as to detect a defect of the specimen by converting an analog image signal outputted from the image sensor to a digital image signal with an A/D converter, and a display displays information of the defect detected.

Method and apparatus for inspecting a pattern formed on a substrate

A pattern inspection method including: sequentially imaging plural chip formed on a substrate; selecting at least one of pattern sections of each inspection image obtained by the imaging, while discarding other pattern sections, based on a recipe created in advance, the recipe including information for determining which pattern sections to be selected or discarded; calculating position gap between an inspection image of a chip obtained by the imaging and a reference image stored in a memory by using positional information of pattern images included in the inspection image and reference pattern images which are both corresponding to the at least one of pattern sections selected at the selecting; aligning the inspection image and the reference image by using information of the calculated position gap; and comparing the aligned inspection image with the reference image, and extracting a difference between the two images as a defect candidate.

Pattern inspection method and its apparatus

An apparatus for inspecting pattern defects, the apparatus including: an image acquisition unit which acquires an image of a specimen and stores the acquired image in an image memory; a defect candidate extraction unit which performs a defect candidate extraction process by using the acquired image, which is read from the image memory; and a defect detection unit which performs a defect detection process and a defect classification process based on a partial image containing a defect candidate that is extracted by the defect candidate extraction unit, wherein the processes performed by the defect detection unit is performed off-line asynchronously with an image acquisition process that is performed by the image acquisition unit.

In a pattern inspection apparatus for comparing images of corresponding areas of two patterns, which are formed so as to be identical, so as to judge that a non-coincident part of the images is a defect, the influence of unevenness in brightness of patterns caused by a difference of thickness or the like is reduced, whereby highly sensitive pattern inspection is realized. In addition, high-speed pattern inspection can be carried out without changing the image comparison algorithm. For this purpose, the pattern inspection apparatus operates to perform comparison processing of images in parallel in plural areas. Further, the pattern inspection apparatus operates to convert gradation of an image signal among compared images using different plural processing units such that, even in the case in which a difference of brightness occurs in an identical pattern among images, a defect can be detected correctly.

An apparatus and method for inspecting defects includes an illuminator for irradiating light having an ultraviolet wavelength emitted from a light source onto a specimen through a reflection objective lens, an image-former for forming an image of light reflected from the specimen by the illumination of the light from the illuminator, which is passed through at least the reflection objective lens, a detector which detects the image of light formed by the image-former with an image sensor, and an image processor for processing a signal output from the detector to detect defects on the specimen. The image sensor is a reverse-surface irradiation type image sensor.

The present invention relates to a tool for analyzing by priority a defect having a high possibility of causing an electrical failure when inspecting a particle and a pattern defect in a piece of work which constitutes an electronic device such as a semiconductor integrated circuit, and relates to a system therefor. On the basis of the result of comparison between defect information which is the result of inspection by an inspection tool and layout data stored in an auxiliary storage device, or on the basis of the result of reinspection by comparison between a defect and a wiring pattern as a background by an inspection processing operation unit, an object to be reviewed is selected using review conditions stored in the auxiliary storage device.

Inspection method and its apparatus, inspection system

An apparatus for inspecting pattern defects, the apparatus including: a defect candidate extraction unit configured to perform a defect candidate extraction process by comparing a detected image signal with a reference image signal; and a defect detection unit configured to perform a defect detection process and a defect classification process based on a partial image containing a defect candidate that is extracted by the defect candidate extraction unit, wherein the processes performed by the defect candidate extraction unit and/or the defect detection unit are performed asynchronously with an image acquisition process.

A pattern inspection method including: sequentially imaging plural chips formed on a substrate; selecting a pattern which is suitable for calculating position gap between an inspection image of a subject chip and reference image stored in memory from an image of a firstly imaged chip among said sequentially imaged plural chips formed on the substrate; computing position gap between an inspection image of a chip obtained by the sequential imaging and reference image stored in a memory by using a positional information of a pattern image included in the inspection image and a reference pattern image included in the reference image which are both corresponding to the pattern selected at the selecting; aligning the inspection image and the reference image by using information of the calculated position gap; and comparing the aligned inspection image with the reference image and extracting a difference as a defect candidate.

A pattern inspection apparatus includes a light source which emits ultraviolet light, an irradiator which reduces coherency of the ultraviolet light and irradiates the coherency reduced ultraviolet light onto a specimen on which a pattern is formed through an objective lens, and a focus control means which projects light on the specimen from outside the objective lens, detects light reflected from the specimen by the projection and adjusts a height of the specimen relative to the objective lens. The apparatus further includes an image which forms an image of the specimen irradiated with the ultraviolet light and detects the formed image with a sensor, an image processor which processes a signal outputted from the sensor to detect a defect of the specimen, and a display which displays information of the defect detected by the image processor.

A method of inspecting detects includes assigning a plurality of sets of image acquisition conditions, executing inspection using each of the sets of conditions, classifying all detected defects into real defects and false defects by use of an automatic defect classification function, and selecting, from the plurality of sets of conditions, a set of conditions ideal for detection.

Method of inspecting defects

A method and apparatus for inspecting pattern defects emitting a laser beam, adjusting a light-amount of the laser beam, converting the light-amount adjusted laser beam into a slit-like laser light flux, lowering coherency of the slit-like laser light flux, and irradiating a sample with the coherence reduced slit-like laser light flux. An image of reflection light from the sample is obtained, and a detector is provided which includes the image sensor for receiving the image of the reflection light and for converting it into a detected image signal. An image processor is provided for detecting defects on patterns formed on the sample in accordance with the detected image signal.

The present invention relates to a pattern defect inspection method and apparatus that reveal ultramicroscopic defects on an inspection target in which ultramicroscopic circuit patterns are formed, and inspect the defects with high sensitivity and at a high speed. The present invention provides a pattern inspection apparatus for comparing the images of corresponding areas of two formed patterns that should be identical with each other, and judging any mismatched image area as a defect. The pattern inspection apparatus includes means for performing an image comparison process on a plurality of areas in a parallel manner. Further, the pattern inspection apparatus also includes means for converting the gradation of the image signals of compared images in each of a plurality of different processes. Therefore, the present invention can properly detect defects even if the same patterns of compared images differ in brightness.

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Yokohama, Japan

Takafumi Okabe