Fujitsu Corporation

Takafumi Kimura

Hideki Yamawaki

Masaru Ihara

Hiroshi Nakao

Shigeo Kodama

Hideaki Yamauchi

Yoshihiro Arimoto

Masaaki Nakabayashi

Kazuto Ikeda

Keigo Nagasaka

A method for growing a dielectric film containing Sr on a substrate includes the steps of: dissolving a Sr compound containing Sr((CH.sub.3).sub.5 C.sub.5).sub.2 into an organic solvent or mixing Sr(thd).sub.2 and an amine compound to form a source material; vaporizing the source material to produce a gaseous source material; and decomposing the gaseous source material, obtained in the step of vaporization, in the vicinity of a surface of a substrate held in a reaction chamber, to cause a deposition of a dielectric film containing Sr upon the surface of the substrate.

Vapor phase growth of a dielectric film and a fabrication process of a

An apparatus for a chemical vapor deposition of a compound film on a substrate, comprising: a plurality of gas-generating chambers each containing an evaporating boat for a solid source containing a component element of a compound film to be formed on a substrate, provided with a heating element for heating and evaporating the solid source, having an inlet for a carrier gas and a gas outlet, and arranged such that effective gas-generating portions thereof are thermally isolated from each other; a gas-mixing chamber for mixing gases from said gas-generating chambers, provided with a heater element for heating a gas passing therethrough and having inlets for gases flowing from said gas-generating chambers and an outlet for a gas mixture; and a film-growing chamber containing a substrate on which a compound film is formed by a gas phase reaction, provided with a heating element for heating the substrate, and having an inlet for a gas mixture flowing from said gas-mixing chamber and an exhaust gas outlet. Also disclosed is a chemical vapor deposition process using the disclosed apparatus.

Apparatus and process for chemical vapor deposition

A method of evaluating the characteristics of superconductors, comprising: irradiating light to a superconductor held at a predetermined temperature; detecting light transmitted through the superconductor and composing a spectrum of the transmitted light; and using the obtained spectrum, calculating a ratio of the number of electrons contributing to a normal conduction to the number of electrons contributing to a superconduction in the superconductor, the ratio being effective at said predetermined temperature. A process and an apparatus for forming superconductor films by using the method are also disclosed.

Method of evaluating characteristics of superconductors and process and

Process for the production of semiconductor devices by using silicon-on-insulator (SOI) techniques. The Si layers of the SOI structure include an interfacial layer of Si and a buffer layer of Si formed thereon, whereby the formation of stacking faults in the Si layers can be effectively prevented. Pretreatment of the underlying insulating material with a molybdate solution and interposition of an additional layer of slowly grown single-crystalline Si between the buffer layer of Si and the overlying active Si layer are also effective to inhibit the stacking faults. Semiconductor devices with high quality can be produced with good yield.

Process for the production of semiconductor devices utilizing multi-step

A thin film of a high temperature superconductive oxide of rare earth metal-alkali earth metal-copper-oxygen system or group VA metal-alkali earth metal-copper-oxygen system, which has an excellent crystallinity, particularly a single crystalline structure, is formed on a substrate by a CVD method, in which halides of the metals and an oxygen source gas are separately flowed over a substrate and caused to react with each other over the substrate, to deposit a desired superconducting oxide film.

Growing community of inventors

Hiratsuka, Japan

Takafumi Kimura