Nissan Chemical Industries Limited

Nissan Chemical Corporation

Takafumi Endo

Rikimaru Sakamoto

Keisuke Hashimoto

Hirokazu Nishimaki

Yasunobu Someya

Noriaki Fujitani

Tokio Nishita

Hikaru Tokunaga

Takahiro Kishioka

Yuki Endo

Ryuji Ohnishi

Bangching Ho

Tetsuya Shinjo

Ryo Karasawa

Hiroyuki Wakayama

Yoshiomi Hiroi

Kenji Takase

Ryuta Mizuochi

Tomohisa Ishida

Shigetaka Otagiri

Makoto Nakajima

Tadashi Hatanaka

Shuhei Shigaki

Hiroto Ogata

Daigo Saito

Yuichi Goto

Satoshi Kamibayashi

A resist underlayer film-forming composition includes a resin; and a crosslinkable compound of Formula (1) or Formula (2): wherein the crosslinkable compound of Formula (1) or Formula (2) is a compound obtained by reacting a compound of Formula (3) or Formula (4): with an ether compound comprising a hydroxy group or a Calcohol.

Resist underlayer film-forming composition containing substituted crosslinkable compound

A resist underlayer film, which, while exhibiting excellent resistance to a resist developer which is a resist solvent or an alkaline aqueous solution, exhibits removability, and preferably solubility, only in wet etching chemicals. This composition for forming a resist underlayer film contains a solvent, a heterocyclic compound having a dicyanostyryl group, a cyclic compound including an amide group, for example, and the reaction product of a heterocyclic compound precursor having an epoxy group and an active proton compound, for example.

Composition containing a heterocyclic compound having a dicyanostyryl group, for forming a resist underlayer film capable of being wet etched

A protective film forming composition which has good mask (protection) function against a wet etching liquid and a high dry etching rate during processing of a semiconductor substrate and also has good coverage even in a stepped substrate, and from which a flat film can be formed due to a small difference in film thickness after being embedded; a protective film produced using said composition; a substrate with a resist pattern; and a method for manufacturing a semiconductor device. This protective film forming composition against a wet etching liquid for semiconductors contains an organic solvent and a polymer having, at a terminal thereof, a structure containing at least one pair of two adjacent hydroxyl groups in a molecule. The structure containing two adjacent hydroxyl groups in a molecule may be 1,2-ethanediol structure (A).

Chemical solution-resistant protective film forming composition containing polymerization product having diol structure at terminal thereof

A protective film-forming composition including good mask (protection) function against a wet etching liquid and a high dry etching rate during processing of semiconductor substrates, including good coverage even in stepped substrates, and from which flat films can be formed due to a small difference in film thickness after embedding; a protective film produced using said composition; a substrate with a resist pattern; and a method for manufacturing a semiconductor device. A protective film-forming composition which protects against a semiconductor wet etching liquid, wherein a reaction product (P) of a diepoxy compound (B) and an bifunctional proton-generating compound (C) contains a structure represented by formula (1) (in formula (1), Ar represents a C6-40 aryl group, n represents an integer of 2-10, —Y— represents —OCO—, —O— or —S—, and * represents the bonding site with the reaction product (P) molecule terminal). The protective film-forming composition further includes an organic solvent (S).

Chemical-resistant protective film forming composition containing hydroxyaryl-terminated polymer

A resist underlayer film-forming composition in which a coating film having high flattening properties is formed on a substrate. A resist underlayer film-forming composition including an epoxy adduct (C) obtained by reacting an epoxy group-containing compound (A) with an epoxy adduct-forming compound (B), wherein one or both of the epoxy group-containing compound (A) and the epoxy adduct-forming compound (B) contain an optionally branched alkyl group having a carbon atom number of three or more. The epoxy adduct-forming compound (B) is at least one compound selected from the group consisting of carboxylic acid (B1), carboxylic anhydride (B2), a phenol compound (B3), a hydroxyl group-containing compound (B4), a thiol compound (B5), an amino compound (B6), and an imide compound (B7). The optionally branched alkyl group having a carbon atom number of three or more is contained in the epoxy adduct-forming compound (B). The optionally branched alkyl group has a Calkyl group.

Resist underlayer film-forming composition comprising epoxy adduct having long-chain alkyl group

A resist underlayer film having, in particular, a high dry etching speed; the resist underlayer film formation composition; a resist pattern formation method, and a method for manufacturing a semiconductor device. The resist underlay film formation composition contains: a bifunctional or higher compound having one or more disulfide bonds; a trifunctional or higher compound and/or a reaction product; and a solvent. The bifunctional or higher compound is a dicarboxylic acid containing a disulfide bond. The trifunctional or higher compound is a compound containing three or more epoxy groups.

Resist underlayer film forming composition having a disulfide structure

A photocurable composition for forming coating film having flattening properties on a substrate, with high fillability into patterns and capability of forming a coating film that is free from thermal shrinkage, which contains at least one compound that contains a photodegradable nitrogen-containing and/or photodegradable sulfur-containing structure, a hydrocarbon structure, and a solvent. The compound may have the photodegradable nitrogen-containing and/or photodegradable sulfur-containing structure and the hydrocarbon structure in one molecule, or may be a combination of compounds which contain the structures in separate molecules.

Photocurable composition and method for producing semiconductor device

A protective film forming composition forms a flat film having good mask function against a wet etching liquid during a semiconductor substrate processing, high dry etching rate and good coverage of a substrate with level difference, while having small film thickness difference after embedding. A protective film is produced using this composition. A substrate has a resist pattern. A method produces a semiconductor device. A composition forms a protective film against a wet etching liquid for semiconductors, containing a solvent and a ring-opened polymer (C) obtained by reaction between a diepoxy compound (A) and a bi- or higher functional proton-generating compound (B). The ring-opened polymer (C) is preferably represented by a unit structure of formula (A-1). (In formula (A-1), Q represents a divalent organic group generated by the diepoxy compound (A) ring-opening polymerization; and T represents a divalent organic group derived from the bi- or higher functional proton-generating compound (B)).

Chemical-resistant protective film-forming composition containing polymerization product of arylene compound having glycidyl group

A resist underlayer film-forming composition has high solubility in a solvent used at a lithography process for exhibiting good coating film forming properties and able to decrease a sublime generated during formation of a film. A resist underlayer film-forming composition having a novolac resin having a structure group (C) obtained by a reaction of an aromatic ring structure of an aromatic ring-containing compound (A) with a vinyl group of an aromatic vinyl compound (B). The aromatic vinyl compound (B) is represented by Formula (1), and is specifically styrene, 2-vinylnaphthalene, 4-tert-butylstyrene, or 4-tert-butoxystyrene. The structure group (C) is represented by Formula (2). The aromatic ring-containing compound (A) is an aromatic amine compound or a phenolic hydroxy group-containing compound. The novolac resin is a resin produced by a reaction of the aromatic amine compound or the phenolic hydroxy group-containing compound with aldehyde or ketone.

Resist underlayer film-forming composition containing novolac resin to which aromatic vinyl compound is added

A composition for forming a protective film having excellent resistance to a wet etching solution for semiconductors during a lithographic process in the manufacture of semiconductors; a method of forming a resist pattern using said protective film; and a method for manufacturing a semiconductor device. This composition for forming a protective film against a wet etching solution for semiconductors includes: a compound or polymer which contains at least one among an acetal structure and an amide structure; and a solvent. The polymer is preferably a copolymer of: a compound (a) containing at least one acetal structure in a molecule; and a compound (b) containing at least one amide structure in a molecule.

Protective film-forming composition having acetal structure and amide structure

A resist underlayer film that exhibits removability and preferably solubility only in wet etching reagent solutions, while exhibiting good resistance to resist developers that are resist solvents or aqueous alkali solutions. The composition for forming a resist underlayer film includes a dicyanostyryl group-bearing polymer (P) or dicyanostyryl group-bearing compound (C) and includes solvent, and does not contain a protonic acid curing catalyst and does not contain an alkylated aminoplast crosslinking agent derived from melamine, urea, benzoguanamine, or glycoluril.

Composition containing a dicyanostyryl group, for forming a resist underlayer film capable of being wet etched

A protective film-forming composition which protects against a semiconductor wet etching solution, contains a solvent and a compound or polymer thereof containing at least one pair including two adjacent hydroxyl groups in a molecule thereof, and forms a protective film which can quickly be removed by dry etching and exhibits excellent resistance against a semiconductor wet etching solution during the lithographic process when producing semiconductors; a method for producing a resist pattern-equipped substrate which uses the protective film; and a method for producing a semiconductor device.

Protective film forming composition having a diol structure

A photocurable composition for forming coating film having flattening properties on a substrate, with high fillability into patterns and capability of forming a coating film that is free from thermal shrinkage, which contains at least one compound that contains a photodegradable nitrogen-containing and/or sulfur-containing structure, a hydrocarbon structure, and a solvent. A compound which contains at least one photodegradable structure in one molecule. A compound which contains the photodegradable structures, and the hydrocarbon structure in one molecule, or a combination of compounds which contain the structures in separate molecules. The hydrocarbon structure is a saturated or unsaturated, linear, branched or cyclic hydrocarbon group having a carbon atom number of 1 to 40. The nitrogen-containing structure contains a reactive nitrogen-containing functional group or reactive carbon-containing functional group produced by irradiation with ultraviolet light; and the sulfur-containing structure contains an organic sulfur radical or carbon radical produced by irradiation with ultraviolet light.

There is provided a composition for forming an EUV resist overlayer film that is used in an EUV lithography process, that does not intermix with the EUV resist, that blocks unfavorable exposure light for EUV exposure, for example, UV light and DUV light and selectively transmits EUV light alone, and that can be developed with a developer after exposure. A composition for forming an EUV resist overlayer film used in an EUV lithography process including a resin containing a naphthalene ring in a main chain or in a side chain and a solvent, in which the resin may include a hydroxy group, a carboxy group, a sulfo group, or a monovalent organic group having at least one of these groups as a hydrophilic group.

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Toyama, Japan

Takafumi Endo