Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Elpida Memory, Inc.

Takaaki Noda

Yoshiro Hirose

Shingo Nohara

Tsukasa Kamakura

Takeo Hanashima

Satoshi Shimamoto

Kiyohiko Maeda

Norikazu Mizuno

Hiroshi Ashihara

Atsushi Moriya

Kenichi Suzaki

Kosuke Takagi

Jie Wang

Tomohide Kato

Kotaro Konno

Kazuyuki Okuda

Masato Terasaki

Tomoki Imamura

Atsushi Sano

Masanori Sakai

Ryuji Yamamoto

Takashi Ozaki

Yasuhiro Inokuchi

Hirohisa Yamazaki

Taketoshi Sato

Koei Kuribayashi

Hironobu Miya

Shinya Ebata

Yasuo Kunii

Kiyohisa Ishibashi

Masami Miyamoto

Akira Morohashi

Osamu Kasahara

Masatoshi Takada

Mamoru Sueyoshi

Kazuaki Tonari

Satoru Sugiyama

Motoshi Sawada

Minoru Sakamoto

Junji Asahi

There is included (a) loading a substrate into a process container; (b) performing a process of forming a film on the substrate in the process container by alternately or simultaneously performing, a predetermined number of times, supplying a precursor gas from a first supplier to the substrate, and supplying a reaction gas from a second supplier to the substrate; (c) unloading the processed substrate from an interior of the process container; and (d) oxidizing at least one part of a film formed inside the process container in (b) so as to change the at least one part into an oxide film in a state in which the processed substrate is unloaded from the interior of the process container, wherein in (d), an oxygen-containing gas and a hydrogen-containing gas are supplied into the process container and at that time, the hydrogen-containing gas is supplied toward the first supplier.

Substrate processing method, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique that includes a reaction vessel including a first region in which a substrate is arranged and a second region in which no substrate is arranged; a heater configured to heat the first region; a gas supplier configured to supply a plurality of gases including cleaning gases; and a controller that controls at least one selected from the group of the gas supplier, the heater, and a cooler to clean the first region and the second region under different conditions by at least one method selected from the group of a method in which the gas supplier supplies two different kinds of cleaning gases, a method in which the gas supplier supplies one or more cleaning gases from two different locations, and a method in which the heater sets a temperature differently between the first region and the second region.

Apparatus and method for cleaning reaction vessel for processing substrate

A technique of manufacturing a semiconductor device includes forming a film on a substrate in a process chamber by supplying a precursor and a reactant to the substrate under a first temperature at which the precursor and the reactant are not pyrolyzed, and purging, after performing the act of forming the film, an interior of the process chamber by supplying at least one selected from a group consisting of a plasma-excited gas, an alcohol, and a reducing agent into the process chamber under a second temperature equal to or lower than the first temperature.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique that includes: performing a set a plurality of times, the set including: (a) loading at least one substrate into a process container; (b) performing a process of forming a nitride film on the at least one substrate by supplying a film-forming gas to the at least one substrate supported by a support in the process container; (c) unloading the processed at least one substrate from an interior of the process container; and (d) supplying an oxidizing gas into the process container from which the processed at least one substrate has been unloaded so as to oxidize one part of the nitride film formed inside the process container in (b) into an oxide film and maintain another part of the nitride film, which is different from the one part of the nitride film, as it is without oxidizing the another part.

Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium

A film where a first layer and a second layer are laminated is formed on a substrate by performing: forming the first layer by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: supplying a source to the substrate, and supplying a reactant to the substrate, under a first temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively; and forming the second layer by performing a second cycle a predetermined number of times, the second cycle including non-simultaneously performing: supplying the source to the substrate, and supplying the reactant to the substrate, under a second temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively, the second temperature being different from the first temperature.

Method of manufacturing semiconductor device, recording medium, and substrate processing method

According to the present invention, when a film is formed on a substrate, a film-forming rate or film quality is stabilized. There is provided a method of manufacturing a semiconductor device, including: (a) forming a film on a substrate by supplying at least a gas including hydroxyl group to the substrate in a process chamber while maintaining a temperature of an inside of the process chamber at a first temperature; (b) changing the temperature of the inside of the process chamber from the first temperature to a second temperature higher than the first temperature; and (c) maintaining the temperature of the inside of the process chamber at the second temperature at least in a state that the substrate is not in the process chamber.

Method of manufacturing semiconductor device, substrate processing apparatus and recording medium

A semiconductor device manufacturing method includes: vertically arranging and storing a plurality of substrates in a processing container and forming a condition where at least an upper region or a lower region relative to a substrate disposing region where the plurality of substrates are arranged is blocked off by an adaptor; and while maintaining the condition, forming films on the plurality of substrates by performing a cycle including the following steps a predetermined number of times in a non-simultaneous manner: supplying source gas to the plurality of substrates in the processing container from the side of the substrate disposing region; discharging the source gas from the interior of the processing container via exhaust piping; supplying reaction gas to the plurality of substrates in the processing container from the side of the substrate disposing region; and discharging the reaction gas from the interior of the processing container via the exhaust piping.

Method of manufacturing semiconductor device by forming a film on a substrate, substrate processing apparatus, and recording medium

A method for cleaning an interior of a process chamber after performing a process of forming a carbon-containing film on a substrate in the process chamber includes performing a cycle a predetermined number of times. The cycle includes supplying a modifying gas into the process chamber to modify deposits including the carbon-containing film deposited on a surface of a member in the process chamber and supplying an etching gas into the process chamber to remove the modified deposits through a thermochemical reaction.

Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device includes forming a thin film having excellent etching resistance and a low dielectric constant on a substrate, removing first impurities containing HO and Cl from the thin film by heating the thin film at a first temperature higher than a temperature of the substrate in the forming of the thin film, and removing second impurities containing a hydrocarbon compound (CH-based impurities) from the thin film in which heat treatment is performed at the first temperature by heating the thin film at a second temperature equal to or higher than the first temperature.

Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and non-transitory computer-readable recording medium

A method of manufacturing a semiconductor device, includes: forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas serving as a silicon source and a carbon source or a precursor gas serving as a silicon source but no carbon source, and a first catalyst gas to the substrate; supplying an oxidizing gas and a second catalyst gas to the substrate; and supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate.

A method of manufacturing a semiconductor device, includes forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas serving as a silicon source and a carbon source or a precursor gas serving as a silicon source but no carbon source, and a first catalyst gas to the substrate; supplying an oxidizing gas and a second catalyst gas to the substrate; and supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate.

There is provided a technique including: (a) forming a thin film containing a predetermined element, oxygen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a source gas containing the predetermined element, carbon and a halogen element having a chemical bond between the predetermined element and carbon to the substrate; (a-2) supplying an oxidizing gas to the substrate; and (a-3) supplying a catalytic gas to the substrate; (b) removing a first impurity from the thin film by thermally processing the thin film at a first temperature higher than a temperature of the substrate in (a); and (c) removing a second impurity different from the first impurity from the thin film by thermally processing the thin film at a second temperature equal to or higher than the first temperature after performing (b).

Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and recording medium

A method of cleaning an interior of a process chamber by supplying a cleaning gas into the process chamber after a process of forming a thin film on a substrate in the process chamber is performed, including alternately repeating changing a pressure in the process chamber from a first pressure range to a second pressure range, and changing the pressure in the process chamber from the second pressure range to the first pressure range. In this method, when the pressure in the process chamber is changed to the first pressure range, the pressure in the process chamber is changed to the first pressure range without being maintained at the second pressure range, and when the pressure in the process chamber is changed to the second pressure range, the pressure in the process chamber is changed to the second pressure range without being maintained at the first pressure range.

Method of cleaning, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Growing community of inventors

Toyama, Japan

Takaaki Noda