Tokyo Electron Limited

Taiki Katou

Kensaku Narushima

Shuji Azumo

Yusaku Kashiwagi

Eiichi Komori

Kohichi Satoh

Kenji Ouchi

Masato Morishima

Kazuki Yamada

Motoko Nakagomi

A method for forming a SiC film on a target substrate by ALD, comprises: activating a surface of the target substrate by activation gas plasma which is plasmatized an activation gas; and forming a SiC film by supplying a source gas containing a precursor represented by a chemical formula RSiXor RSiHClXonto the target substrate whose the surface is activated by activating the surface of the target substrate, where, R is an organic group having an unsaturated bond, Xis selected from a group consisting of H, F, Cl, Br and I, and Xis one selected from a group consisting of Cl, Br and I.

Film forming method for SiC film

There is provided a method of forming a sealing film to seal a device formed on a substrate, including: supplying a mixture gas including a silicon-containing gas and a halogen element-containing gas or a mixture gas including a silicon-containing gas and a gas containing a functional group having an electronegative property stronger than that of nitrogen, as a first mixture gas, into a processing container; generating plasma of the first mixture gas within the processing container; and forming a first sealing film to cover the device using the first mixture gas activated by the plasma.

Film forming method and film forming apparatus

There is a method of selectively etching a silicon oxide film among a silicon nitride film and the silicon oxide film formed on a surface of a substrate to be processed, the method including: under a vacuum atmosphere, intermittently supplying at least one of a first processing gas composed of a hydrogen fluoride gas and an ammonia gas and a second processing gas composed of a compound of nitrogen, hydrogen and fluorine, to the substrate to be processed multiple times.

Etching method, storage medium and etching apparatus

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Nirasaki, Japan

Taiki Katou