Tokyo Electron Limited

Taiki Kato

Zeyuan Ni

Yumiko Kawano

Akitaka Shimizu

Shuji Azumo

Yoshihiro Takezawa

Kazuyoshi Matsuzaki

Ayuta Suzuki

Shuichiro Uda

Yuji Seshimo

Kosuke Yamamoto

Takeshi Saito

Susumu Takada

Hisashi Higuchi

Shinichi Ike

A film formation method includes (A) to (C) below: (A) preparing a substrate including, on a surface of the substrate, a first region from which an insulating film is exposed and a second region from which a metal film is exposed; (B) forming a self-assembled monolayer in the second region by supplying an organic compound containing a nitro group, which is a raw material of the self-assembled monolayer, in a head group to the surface of the substrate, and selectively adsorbing the organic compound to the second region among the first region and the second region; and (C) forming a second insulating film in the first region by supplying a raw material gas as a raw material of the second insulating film to the surface of the substrate while formation of the second insulating film in the second region is inhibited by the self-assembled monolayer.

Selective film formation using self-assembled monolayer

A method for manufacturing a semiconductor device including a TiN film. The method comprises: supplying TiClgas to a substrate; purging the TiClgas; supplying NHgas to the substrate; purging the NHgas; and supplying an inhibitor that inhibits adsorption of TiClor NHto the substrate. A plurality of cycles each including the supplying the TiClgas, the purging the TiClgas, the supplying the NHgas, and the purging the NHgas are performed, at least a part of the plurality of cycles includes the supplying the inhibitor, and after the supplying the inhibitor is performed, the supplying the TiClgas or the supplying the NHgas is performed without purging the inhibitor, or, after purging the inhibitor for a shorter time than the purging the TiClgas or the purging the NHgas, the supplying the TiClgas or the supplying the NHgas is performed.

Method for manufacturing semiconductor device, and film-forming device

A method of selectively etching a silicon nitride film includes a first step of disposing a target substrate having the silicon nitride film formed thereon in a processing space, a second step of introducing a gas containing H and F into the processing space, and a third step of selectively introducing radicals of an inert gas into the processing space.

Etching method and etching device

A method of manufacturing a semiconductor device having a metal oxide film with workpiece accommodated in a chamber, includes: supplying a precursor gas containing a metal complex into the chamber to form a precursor layer on the workpiece from the precursor gas; supplying an oxidizing gas into the chamber to oxidize the precursor layer so that a metal oxide layer is formed, the oxidizing gas being a gas containing HO or a gas having a functional group containing hydrogen atoms in the metal complex and containing an oxidant to generate HO by reaction with the functional group; supplying an HO removal gas containing alcohols or amines into the chamber to remove HO adsorbed onto the metal oxide layer; and executing a plurality of cycles each including the supplying a precursor gas and the supplying an oxidizing gas. At least some of the cycles includes the supplying an HO removal gas.

Method of manufacturing semiconductor device and method of forming metal oxide film

Growing community of inventors

Nirasaki, Japan

Taiki Kato