Shin-Etsu Chemical Co., Ltd.

Taiga Ogose

Takuro Kosaka

Yukio Inazuki

Hideo Kaneko

A reflective mask blank including a substrate, a multilayer reflection film formed on one main surface of the substrate and reflects exposure light. The multilayer reflection film has a periodically laminated structure portion in which low refractive index layers and high refractive index layers are alternately laminated, and at least one of the low refractive index layer has a two-layered structure consisting of one layer containing molybdenum, and at least one additive element selected from the group consisting of nitrogen, carbon, boron, silicon and hydrogen, and the other layer containing molybdenum and substantively free of other elements other than molybdenum.

Reflective mask blank, and reflective mask

With respect to a reflective mask blank for a reflective mask used in EUV lithography using EUV light, the reflective mask blank including a substrate, a multilayer reflection film having a periodically laminated structure in which low-refractive index layers composed of a material containing molybdenum and high-refractive index layers are alternately laminated, a protection film, and an absorber film is provided. The low-refractive index layer consists of one or more of first low-refractive index sublayers, and one or more of second low-refractive index sublayers that have a different composition from a composition of the first low-refractive index sublayer.

Reflective mask blank, and method for manufacturing reflective mask

A substrate with a film for a reflective mask blank including a substrate, a multilayer reflection film and a back surface conductive film having a composition at the side in contact with the substrate and a different composition at the side remotest from the substrate is provided. The composition at the side in contact with the substrate contains silicon and nitrogen, as main components, and the different composition at the side remotest from the substrate contains tantalum, as a main component, and at least one element selected from the group consisting of silicon, germanium and aluminum.

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Joetsu, Japan

Taiga Ogose