Mediatek Corporation

Taiwan Semiconductor Manufacturing Comp. Ltd.

Mediatek Singapore Pte. Ltd.

Tai-Yu Chen

Shang-Chieh Chien

Li-Jui Chen

Heng-Hsin Liu

Sheng-Kang Yu

Chieh Hsieh

Chia-Hao Hsu

Wen-Sung Hsu

Sheng-Liang Kuo

Kai Tak Lam

Sagar Deepak Khivsara

Chung-Fa Lee

Cho-Ying Lin

Chi-Wen Pan

Zhiqiang Wu

Hsing-Chih Liu

Jih-Ming Hsu

Yao-Pang Hsu

Bo-Jiun Yang

Chi-Yuan Chen

Shih-Chin Lin

Shiann-Tsong Tsai

Chung-Wei Wu

Wei-Ting Wang

Gwan-Sin Chang

Kuo-An Liu

Yun-Ching Li

Pei-Yu Huang

Wen-Tsan Hsieh

Tzu-Hung Lin

I-Hsuan Peng

Yi-Jou Lin

Hsiang Mei Chen

Chien-Tse Fang

Chia-Feng Yeh

Chi-Wei Yang

Ming-Hsien Lee

Kuan-Hung Chen

Che-Hung Kuo

Jia-Wei Fang

Yu-Chia Chang

Uming Ko

Chin-Chiang Chang

Tzu-Jung Pan

Chih-Yuan Hsiao

Che-Ming Hsu

Chia-Wei Chi

Long-Kun Yu

Ya-Jui Hsieh

Hung-Jung Hsu

Kun-Ting Hung

Jen-Chuan Chen

Shun-Yao Yang

Ta-Chang Liao

Chiao-Pin Fan

Chih-Fu Tsai

Yen-Hwei Hsieh

Example implementations described herein include a laser source and associated methods of operation that can balance or reduce uneven beam profile problem and even improve plasma heating efficiency to enhance conversion efficiency and intensity for extreme ultraviolet radiation generation. The laser source described herein generates an auxiliary laser beam to augment a pre-pulse laser beam and/or a main-pulse laser beam, such that uneven beam profiles may be corrected and/or compensated. This may improve an intensity of the laser source and also improve an energy distribution from the laser source to a droplet of a target material, effective to increase an overall operating efficiency of the laser source.

Semiconductor processing tool and methods of operation

An integrated circuit (IC) configurable to perform adaptive thermal ceiling control in a per-functional-block manner, an associated main circuit, an associated electronic device and an associated thermal control method are provided. The IC may include a plurality of hardware circuits arranged to perform operations of a first functional block, and at least one thermal control circuit. At least one temperature sensor is coupled with the first functional block to detect temperature and to generate at least one temperature sensing result of the first functional block. The thermal control circuit performs thermal control on the first functional block to prevent the first functional block from overheating and inducing abnormal function operations, by monitoring the temperature sensing result and by trying to prevent the temperature sensing result from exceeding first temperature upper-limit, wherein the first temperature upper-limit is configurable with respect to per-functional-block thermal operation capability of the first functional block.

Integrated circuit configurable to perform adaptive thermal ceiling control in per-functional-block manner, associated main circuit, associated electronic device and associated thermal control method

A method of extreme ultraviolet lithography includes: generating within a source vessel extreme ultraviolet (EUV) light by striking a stream of droplets of target material shot across the source vessel with pulses from a laser to create a plasma from which EUV light is emitted; directing the generated EUV light out of the source vessel through an intermediate focus cap along a pathway toward a reticle of a scanner; creating a longitudinal mechanical wave extending across the pathway; and exposing a photoresist layer on a semiconductor substrate to pattern a circuit layout by the generated EUV light.

Acoustic particle deflection in lithography tool

A method includes: removing debris on a collector of a lithography equipment by changing physical structure of the debris with a cleaner; forming a cleaned collector by exhausting the removable debris from the collector; and forming openings in a mask layer on a substrate by removing regions of the mask layer exposed to radiation from the cleaned collector.

Methods of cleaning a lithography system

A semiconductor device includes a substrate, an electronic component, a cover and a liquid metal. The electronic component is disposed on the substrate. The cover is disposed on the substrate and covers the electronic component. The liquid metal is formed between the cover and the electronic component.

Semiconductor device and manufacturing method thereof

A semiconductor package structure includes a frontside redistribution layer, a first semiconductor die, a first capacitor, a conductive terminal, and a backside redistribution layer. The first semiconductor die is disposed over the frontside redistribution layer. The first capacitor is disposed over the frontside redistribution layer and electrically coupled to the first semiconductor die. The conductive terminal is disposed below the frontside redistribution layer and electrically coupled to the frontside redistribution layer. The backside redistribution layer is disposed over the first semiconductor die.

Semiconductor package structure

A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.

System and method for performing extreme ultraviolet photolithography processes

A light source is provided capable of maintaining the temperature of a collector surface at or below a predetermined temperature. The light source in accordance with various embodiments of the present disclosure includes a processor, a droplet generator for generating a droplet to create extreme ultraviolet light, a collector for reflecting the extreme ultraviolet light into an intermediate focus point, a light generator for generating pre-pulse light and main pulse light, and a thermal image capture device for capturing a thermal image from a reflective surface of the collector.

Lithography thermal control

A semiconductor package includes a substrate; a die mounted on a top surface of the substrate in a flip-chip fashion; and a lid mounted on the die and on a perimeter of the substrate. The lid includes a cover plate and four walls formed integral with the cover plate. A liquid-cooling channel is situated between the cover plate of the lid and a rear surface of the die for circulating a coolant relative to the semiconductor package.

Semiconductor package having liquid-cooling lid

A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. An array of sensors sense the extreme ultraviolet radiation and charged particles emitted by the droplets. A control system analyses sensor signals from the sensors and adjusts plasma generation parameters responsive to the sensor signals.

System and method for monitoring and controlling extreme ultraviolet photolithography processes

An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a collector and a plurality of vibration sensors coupled to the collector. The vibration sensors generate sensor signals indicative of shockwaves from laser pulses and impacts from debris. The system utilizes the sensor signals to improve the quality of EUV light generation.

System and method for omnidirectional real time detection of photolithography characteristics

A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed. The hollow connection member is disposed between the extreme ultraviolet light source and the scanner.

Lithography contamination control

A method includes: removing debris on a collector of a lithography equipment by changing physical structure of the debris with a cleaner, the cleaner being at a temperature less than about 13 degrees Celsius; forming a cleaned collector by exhausting the removable debris from the collector; and forming openings in a mask layer on a substrate by removing regions of the mask layer exposed to radiation from the cleaned collector.

A semiconductor device includes a bottom package, a top package stacked on the bottom package, and an interposer disposed between the bottom package and the top package. The top package is electrically connected to the interposer through a plurality of peripheral solder balls. At least a dummy thermal feature is disposed on the interposer and surrounded by the plurality of peripheral solder balls.

Semiconductor device with dummy thermal features on interposer

A semiconductor package includes a base comprising a top surface and a bottom surface that is opposite to the top surface; a first semiconductor chip mounted on the top surface of the base in a flip-chip manner; a second semiconductor chip stacked on the first semiconductor chip and electrically coupled to the base by wire bonding; an in-package heat dissipating element comprising a dummy silicon die adhered onto the second semiconductor chip by using a high-thermal conductive die attach film; and a molding compound encapsulating the first semiconductor die, the second semiconductor die, and the in-package heat dissipating element.

Semiconductor package having improved thermal interface between semiconductor die and heat spreading structure

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Taipei, Taiwan

Tai-Yu Chen