International Business Machines Corporation

Tai-Hon P Chang

Dieter P Kern

Fritz-Jurgen Hohn

Arthur R Zingher

Daniel Rugar

Harry Jonathon Mamin

Alan D Wilson

Walter W Molzen, Jr

Philip J Coane

Phillip J Coane

Lawrence P Muray

The present invention is directed to a method for selectively scaling the dimensions of a field emission electron gun. The electron gun includes a field emission tip followed by a dual electrode immersion lens. The lens consists of two planar electrodes separated by a dielectric layer. A well defined circular hole is present at the center of each electrode and the dielectric layer. A high scaling factor is applied to the region consisting of the first electrode and the emission tip, reducing the first electrode thickness and bore diameter and the distance between the tip and first electrode to the micrometer range. A weaker scaling factor is applied to the bore diameter of the second electrode and the spacing between the electrodes such that the second electrode bore diameter and distance between the electrodes are approximately equal and are greater than the first electrode thickness and bore diameter and the distance between the tip and first electrode.

Method for selectively scaling a field emission electron gun and device

An electron beam imaging system is described wherein a sharp-tip electron source is biased to produce an electron flow and a conductive target is placed in the path of the electron flow. A planar, electrostatic lens is positioned in the electron flow path and between the electron source and target. The lens includes an aperture; at least a first conductive plane that is biased less negative than the electron source; and one or more conductive planes separated by dielectric layers. A secondary electron detector is formed on the surface of the electrostatic lens that is closest to the conductive target, whereby the lens may be positioned close to the target and still not obstruct secondary electrons emitted from the target from impinging on the secondary electron detector.

Compact, integrated electron beam imaging system

Apparatus and methods are disclosed for inspecting unsintered single or multiple layer ceramic specimens containing or carrying metal paste patterns of the type commonly used to ultimately form laminated multilayer ceramic (MLC) carriers for large scale integrated (LSI) chips. A relatively large surface area of an unsintered ceramic specimen (large in comparison with the minimum feature size of the paste patterns) is temporarily electrically contacted with a conforming electrode. The conforming electrode makes non-damaging electrical contact to any metallic paste exposed at the contacted area. Electric charge is either collected or delivered by this electrode, depending upon the mode of operation. The electrical continuity of metallic paste paths which contact the electrode and extend through the unfired ceramic specimen to surface positions not contacted by the electrode are tested either by delivering electric charge to the other surface locations and correlating therewith the collection of charge by the electrode, or by delivering charge by the electrode to all paste paths in contact therewith and detecting the presence of charge at the other surface locations. A preferred method either for delivering charge to such other surface locations or for detecting charge at such other surface locations is by using an electron probe beam. Various embodiments for the conforming electrode are described.

Inspection of unsintered single layer or multilayer ceramics using a

A large lithographic pattern is written as quickly as possible by writing successive subpatterns in a vector scan mode of operation without any interruption between successive subpatterns. This is made possible by arranging the subpatterns so that they are adjacent to each other and are preferably overlapping and by gradually moving the workpiece with respect to the writing field so as to always keep the subpattern being written within the writing field of the beam. The speed and direction of the workpiece movement (relative to the writing field) is not predetermined for all patterns but is controlled instead by the pattern being written. A sparsely written pattern or portion of a pattern is accompanied by a more rapid table movement than what accompanies a densely written pattern or portion of a pattern. This is made possible by embedding pattern determined workpiece movement commands within the pattern defining data. Through the workpiece movement commands, relative movement between the workpiece and the writing field may be continuously controlled with respect to movement direction, velocity and acceleration. The desired relative position of the workpiece is continuously updated in tiny increments while a laser interferometer control system measures the error between the actual workpiece position and the desired workpiece position and causes the workpiece to track the desired position.

Continuously writing electron beam stitched pattern exposure system

The electron potential of an electron beam is switched between different values without moving the focal plane by effectively changing the axial position of the electron source at the same time that the electron potential is changed. The effective change in axial position of the electron source exactly compensates for the altered effectiveness which magnetic lenses have upon an electron beam of altered electron potential such that the final focal plane remains at the same position without adjusting the field strength of any magnetic lens.

Electron beam potential switching apparatus

A method for electron beam writing of microcircuit patterns utilizing the combination of spiral scan techniques and variable beam sizes. The circuit patterns are outlined in a spiral scan motion using a small size beam in order to ensure good edge sharpness and accuracy. The beam is then increased in size to fill-in the inside area of the pattern. Increasing the beam size increases the beam current and, correspondingly, the exposure speed and system throughput.

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Chappaqua, NY, United States of America

Tai-Hon P Chang